公开(公告)号：US07609377B2

公开(公告)日：2009-10-27

申请号：US11796455

申请日：2007-04-26

申请人： Wei Wu ,  Zhiyong Li ,  Shih-Yuan Wang ,  Zhaoning Yu ,  R. Stanley Williams

发明人： Wei Wu ,  Zhiyong Li ,  Shih-Yuan Wang ,  Zhaoning Yu ,  R. Stanley Williams

IPC分类号： G01J3/44

CPC分类号： G01N21/658

摘要： An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.

摘要翻译： 描述了用于促进表面增强拉曼光谱（SERS）的装置和相关方法。 多个分析物分子附近的SERS-活性结构以致动频率周期性地变形。 与致动频率同步的同步测量装置接收从分析物分子散射的拉曼辐射，并由此产生至少一个拉曼信号测量。

公开(公告)号：US20090022448A1

公开(公告)日：2009-01-22

申请号：US11879242

申请日：2007-07-16

申请人： Wei Wu ,  David Fattal ,  Charles Santori ,  Robert N. Bicknell ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Nathaniel J. Quitoriano

发明人： Wei Wu ,  David Fattal ,  Charles Santori ,  Robert N. Bicknell ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Nathaniel J. Quitoriano

IPC分类号： G02F1/295 ,  G02B6/34

CPC分类号： G02B6/12007 ,  G02B6/124 ,  G02F1/0126 ,  G02F1/3515 ,  G02F2201/307

摘要： Optical devices including waveguide grating structures are described. In accordance with one embodiment, an optical device is provided comprising a horizontal waveguide grating structure having at least one waveguiding layer and at least one subwavelength periodic grating layer. The optical device further comprises upper and lower cladding layers immediately adjoining respective upper and lower surfaces of the waveguide grating structure and having refractive indices lower than a lowest-index one of the waveguiding layers, incident radiation propagating through one of the upper and lower cladding layers toward the waveguide grating structure. The waveguide grating structure is configured for peak reflection of the incident radiation at a peak reflection frequency. A cumulative thickness of the waveguiding layers is less than one tenth of a free space wavelength of the incident radiation at the peak reflection frequency divided by an average refractive index of the waveguiding layers.

公开(公告)号：US20080193359A1

公开(公告)日：2008-08-14

申请号：US11707601

申请日：2007-02-13

申请人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

发明人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

IPC分类号： C01B21/068

CPC分类号： C30B29/10 ,  C30B29/60

摘要： Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

摘要翻译： 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中，公开了一种制造纳米线的方法。 在该方法中，形成许多纳米线前体部件。 每个纳米线前体构件包括大致单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中，公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

公开(公告)号：US20080021587A1

公开(公告)日：2008-01-24

申请号：US11492365

申请日：2006-07-24

申请人： Wei Wu ,  Duncan Stewart ,  Shih-Yuan Wang ,  R. Stanley Williams

发明人： Wei Wu ,  Duncan Stewart ,  Shih-Yuan Wang ,  R. Stanley Williams

IPC分类号： G06F17/50 ,  G06F19/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

摘要翻译： 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统，被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统，被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

公开(公告)号：US07151599B2

公开(公告)日：2006-12-19

申请号：US11044421

申请日：2005-01-27

申请人： M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

发明人： M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

IPC分类号： G01J3/44 ,  G01N21/65

CPC分类号： G01N21/658 ,  G01N2201/0873

摘要： Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

摘要翻译： 公开了用于增强拉曼光谱和超拉曼的装置，系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射，其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在波导中。 该分子分析装置还包括布置在基板上的波长解复用器和辐射传感器，并且被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射。

公开(公告)号：US20150065390A1

公开(公告)日：2015-03-05

申请号：US14394295

申请日：2012-04-20

申请人： Alexandre M. Bratkovski ,  Zhiyong Li ,  Wei Wu ,  Min Hu ,  R. Stanley Williams ,  Ansoon Kim

发明人： Alexandre M. Bratkovski ,  Zhiyong Li ,  Wei Wu ,  Min Hu ,  R. Stanley Williams ,  Ansoon Kim

IPC分类号： G01N21/65 ,  G01N35/00 ,  B01L3/00

CPC分类号： G01N21/658 ,  B01L3/5088 ,  B01L2300/0627 ,  B01L2300/0819 ,  B01L2300/161 ,  G01N21/648 ,  G01N35/00009 ,  G01N2035/00019

摘要： Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a substrate and a sensing member formed on a surface of the substrate. The sensing member includes collapsible signal amplifying structures and an area surrounding the collapsible signal amplifying structures that enables self-positioning of droplets exposed thereto toward the collapsible signal amplifying structures.

摘要翻译： 本文公开了集成传感器的示例。 集成传感器的示例包括形成在基板的表面上的基板和感测构件。 感测构件包括可折叠信号放大结构和围绕可折叠信号放大结构的区域，其使得能够将暴露于其的液滴自动定位到可折叠信号放大结构。

公开(公告)号：US20120154880A1

公开(公告)日：2012-06-21

申请号：US13259418

申请日：2009-09-10

申请人： Wei Wu ,  Jingjing Li ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

发明人： Wei Wu ,  Jingjing Li ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC分类号： G03H1/08 ,  G02F1/01 ,  G02F1/015

CPC分类号： G02F1/0102 ,  G02F1/0121 ,  G02F2202/06 ,  G02F2202/10 ,  G02F2202/16 ,  G02F2203/12 ,  G03H1/02 ,  G03H1/2294 ,  G03H2001/2271 ,  G03H2001/303 ,  G03H2225/22 ,  G03H2225/32 ,  G03H2225/33 ,  G03H2225/35 ,  G03H2225/60

摘要： Various embodiments of the present invention are directed to external, electronically controllable modulators. In one embodiment, a modulating device (100,400) includes a first electrode (104,404), a second electrode (106,406), and an active region (102,402). The active region is configured so that at least a portion of the active region is disposed between the first electrode and the second electrode. Applying a voltage of an appropriate magnitude and polarity to the electrodes changes the conductivity of the active region which in turn shifts the phase and/or amplitude of electromagnetic radiation transmitted through the active region.

摘要翻译： 本发明的各种实施方案涉及外部的电子可控制调节剂。 在一个实施例中，调制装置（100,400）包括第一电极（104,404），第二电极（106,406）和有源区域（102,402）。 有源区被配置为使得有源区的至少一部分设置在第一电极和第二电极之间。 向电极施加适当幅度和极性的电压改变了有源区的电导率，而有源区的电导又转移了透过有源区的电磁辐射的相位和/或振幅。

公开(公告)号：US08143682B2

公开(公告)日：2012-03-27

申请号：US11590959

申请日：2006-10-31

申请人： Alexandre M. Bratkovski ,  Wei Wu ,  Gregory S. Snider ,  R. Stanley Williams

发明人： Alexandre M. Bratkovski ,  Wei Wu ,  Gregory S. Snider ,  R. Stanley Williams

IPC分类号： H01L29/82

CPC分类号： H03K19/18 ,  B82Y10/00 ,  H01L27/22 ,  H03K3/45

摘要： Various method and system embodiments of the present invention are directed to implementing serial logic gates using nanowire-crossbar arrays with spintronic devices located at nanowire-crossbar junctions. In one embodiment of the present invention, a nanowire-crossbar array comprises a first nanowire and a number of substantially parallel control nanowires positioned so that each control nanowire overlaps the first nanowire. The nanowire-crossbar array includes a number of spintronic devices. Each spintronic device is configured to connect one of the control nanowires to the first nanowire and operate as a latch for controlling signal transmissions between the control nanowire and the first nanowire.

摘要翻译： 本发明的各种方法和系统实施例涉及使用位于纳米线交叉点处的自旋电子器件的纳米线交叉阵列来实现串行逻辑门。 在本发明的一个实施例中，纳米线交叉串阵列包括第一纳米线和多个基本上平行的控制纳米线，所述纳米线被定位成使得每个对照纳米线与第一纳米线重叠。 纳米线交叉开关阵列包括许多自旋电子器件。 每个自旋电子设备被配置为将控制纳米线中的一个连接到第一纳米线并且用作用于控制控制纳米线和第一纳米线之间的信号传输的锁存器。

公开(公告)号：US20110240951A1

公开(公告)日：2011-10-06

申请号：US12751977

申请日：2010-03-31

申请人： Jianhua Yang ,  Feng Miao ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

发明人： Jianhua Yang ,  Feng Miao ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/20

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.

摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。

公开(公告)号：US20080317406A1

公开(公告)日：2008-12-25

申请号：US11820310

申请日：2007-06-19

申请人： Charles Santori ,  David Fattal ,  Wei Wu ,  Robert Bicknell ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Duncan Stewart ,  Nathaniel Quitoriano ,  Raymond Beausoleil

发明人： Charles Santori ,  David Fattal ,  Wei Wu ,  Robert Bicknell ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Duncan Stewart ,  Nathaniel Quitoriano ,  Raymond Beausoleil

IPC分类号： G02B6/28

CPC分类号： H04B10/803 ,  G02B6/4206 ,  G02B6/43

摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.

摘要翻译： 光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器 第二个镜头。