公开(公告)号：US11750906B2

公开(公告)日：2023-09-05

申请号：US17558199

申请日：2021-12-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N23/55 ,  G02B5/20 ,  G02B7/00 ,  H04N23/54 ,  G02B3/00 ,  H01L27/146

CPC classification number: H04N23/55 ,  G02B5/201 ,  G02B7/006 ,  H04N23/54

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

公开(公告)号：US11245823B2

公开(公告)日：2022-02-08

申请号：US16539931

申请日：2019-08-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/225 ,  G02B7/00 ,  G02B5/20 ,  G02B3/00 ,  H01L27/146

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

公开(公告)号：US11211421B2

公开(公告)日：2021-12-28

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: G01S17/89 ,  H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US11195864B2

公开(公告)日：2021-12-07

申请号：US16290832

申请日：2019-03-01

Applicant: OmniVision Technologies, Inc.

Inventor： Ming Zhang ,  Yin Qian ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

Abstract: A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.

公开(公告)号：US20210051250A1

公开(公告)日：2021-02-18

申请号：US16539931

申请日：2019-08-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/225 ,  G02B5/20 ,  G02B7/00

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

公开(公告)号：US20200235158A1

公开(公告)日：2020-07-23

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US20190181173A1

公开(公告)日：2019-06-13

申请号：US16276561

申请日：2019-02-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

公开(公告)号：US10312391B2

公开(公告)日：2019-06-04

申请号：US15285201

申请日：2016-10-04

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Dyson H. Tai ,  Bowei Zhang

IPC: H01L31/0352 ,  H01L31/02 ,  H01L31/107 ,  H01L31/0224 ,  H01L27/144

Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.

公开(公告)号：US10269850B2

公开(公告)日：2019-04-23

申请号：US15717047

申请日：2017-09-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US10116889B2

公开(公告)日：2018-10-30

申请号：US15443783

申请日：2017-02-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Qin Wang ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/335 ,  H04N5/369 ,  H04N5/378 ,  H04N9/04 ,  H04N5/374 ,  H04N5/232

Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.