摘要:
Systems and methods for color reproduction tolerances are provided. One method according to the present disclosure may involve selecting a printing configuration, printing a color scale sample using the printing configuration, and scoring the printed color scale sample based at least in part on an extent to which transpositions of the color swatches occur over a color range. When the score of the printed color scale sample indicates a print quality is or will be above a threshold level of quality, a print job using colors of the color range may be printed using the printing configuration.
摘要:
A non-transitory, computer-readable medium has embedded therein instructions executable by a processor. The instructions simulate an operation of a print service provider (PSP) using a model of a printing system with a set of operation parameters for performing the PSP operation. The instructions determine a monitoring strategy based on the simulated PSP operation. The monitoring strategy is for monitoring the PSP operation when performed in the printing system.
摘要:
An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.
摘要:
Devices and methods for tracking a print job using an assignable electronic device on a print service provider (PSP) production floor are provided. One such method includes scanning a barcode-enabled job ticket assigned to a print job using a mobile electronic device assigned to a location on a print service provider production floor and sending barcode data from the barcode-enabled job ticket from to a PSP controller. The mobile electronic device may receive workflow instructions associated with the print job from the PSP controller. In addition, the mobile electronic device may display a representation of the workflow instructions.
摘要:
The present disclosure relates to a compound comprising an oxygen-15 and a process for preparation thereof. It also relates to the use of the compound in positron and/or other nuclide imaging and use of the compound in obtaining a perfusion and/or metabolic image in an animal and/or human body. A process for preparing the compound comprises irradiating a compound comprising oxygen via irradiation energy in the range of 10 MeV to 430 MeV. The oxygen atom in the compound may then be allowed to be converted to an oxygen-15 positron nuclide through a photonuclear reaction. Provided that the molecular structure of the irradiated compound is not disrupted, a compound comprising an oxygen-15 is prepared.
摘要:
An electro-wetting-on-dielectric printing system includes a drum and an electrode array disposed on a surface of the drum, which is made up of individually addressable electrodes and an ink-phobic coating overlaying the electrodes. Electrically charging a portion of the electrodes allows ink to adhere to a portion of the ink-phobic coating in proximity to the charged electrodes. A method for electro-wetting-on-dielectric printing includes selectively charging individually addressable electrodes within an electrode array, and passing the electrode array through an ink bath, wherein ink adheres areas proximate to charged electrodes to form an image. The image is then transferred to the substrate.
摘要:
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.
摘要:
A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the trench, and forming a dielectric layer to fill an upper portion of the trench. Portions of the semiconductor layer laterally adjacent the dielectric layer are removed so that an upper portion thereof extends outwardly from the semiconductor layer. Spacers are formed laterally adjacent the outwardly extending upper portion of the dielectric layer, the spacers are used as a self-aligned mask for defining source/body contact regions.
摘要:
A compound of the general formula (I) or pharmaceutically acceptable prodrugs, salts, hydrates, solvates, crystal forms or diastereomers thereof, wherein A represents a variety of six membered nitrogen containing heterocyclic rings, Q is a bond, halogen, C1-4 alkyl, O, S, SO2, CO or CS and X1, X2, X3 and X4 are optionally substituted by 9 specific substituents or one can be nitrogen. Compositions comprising a carrier and at least one compound of formula (I) are also provided. Further provided are methods of treating tyrosine kinase-associated disease states by administering a compound of formula (I) and methods of suppressing the immune system of a subject by administering a compound of formula (I).
摘要:
The cellular structure of the power device includes a substrate that has a highly doped drain region. Over the substrate there is a more lightly doped epitaxial layer of the same doping. Above the epitaxial layer is a well region formed of an opposite type doping. Covering the wells is an upper source layer of the first conductivity type that is heavily doped. The trench structure includes a sidewall oxide or other suitable insulating material that covers the sidewalls of the trench. The bottom of the trench is filled with a doped polysilicon shield. An interlevel dielectric such as silicon nitride covers the shield. The gate region is formed by another layer of doped polysilicon. A second interlevel dielectric, typically borophosphosilicate glass (BPSG) covers the gate. In operation, current flows vertically between the source and the drain through a channel in the well when a suitable voltage is applied to the gate.