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    Dual-Piece Heat Sink Layer for Robust Reader in Magnetic Recording Head
    81.
    发明申请
    Dual-Piece Heat Sink Layer for Robust Reader in Magnetic Recording Head 有权
    双片散热片，用于磁记录头中的强大读卡器

    公开(公告)号：US20140268423A1

    公开(公告)日：2014-09-18

    申请号：US13835966

    申请日：2013-03-15

    Applicant: Headway Technologies, Inc.

    Inventor： Yan Wu ,  Kowang Liu ,  Glen Garfunkel ,  Min Li

    IPC: G11B5/147

    CPC classification number: G11B5/3133 ,  G11B5/3136 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/607

    Abstract: A read head structure is disclosed with a dual piece heat sink layer having a front piece formed over a front portion of a dynamic flying height (DFH) element and a back piece above a back portion of the DFH element. A first (S1) shield is formed on the front piece and between the front piece and air bearing surface (ABS). Front and back pieces are separated by an insulator gap. The front piece is used to help control read gap protrusion. As a result, a bottom portion of the S1 shield protrudes to a greater extent than a top portion adjacent to the sensor thereby protecting the sensor from unwanted contact with the magnetic media. The dual piece heat sink layer also enables an improved Figure of Merit in terms of temperature rise in the reader per unit of actuation (nm) delivered by the DFH element.

    Abstract translation: 公开了一种读取头结构，其具有在动态飞行高度（DFH）元件的前部上形成的前片和在DFH元件的后部上方的后片的双片散热器层。 第一（S1）屏蔽形成在前片上，前片与空气轴承表面（ABS）之间。 前后片由绝缘体间隙分开。 前片用于帮助控制读取间隙突出。 结果，S1屏蔽件的底部比与传感器相邻的顶部突出得更大，从而防止传感器与磁性介质的不期望的接触。 双片散热器层还能够在DFH元件传送的每单位致动（nm）的阅读器温度上有改善的优点。

    Magnetic Read Head with MR Enhancements
    82.
    发明申请
    Magnetic Read Head with MR Enhancements 有权
    磁读头与MR增强

    公开(公告)号：US20140183673A1

    公开(公告)日：2014-07-03

    申请号：US13732598

    申请日：2013-01-02

    Applicant: HEADWAY TECHNOLOGIES, INC.

    Inventor： Kunliang Zhang ,  Hui-Chuan Wang ,  Junjie Quan ,  Yewhee Chye ,  Min Li

    IPC: H01L29/82

    CPC classification number: H01L43/10 ,  G01R33/093 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.

    Abstract translation: 最终形成传感器或MRAM元件的TMR堆叠或GMR堆叠在其铁磁自由层和/或其SyAP钉扎层的AP1层中包括Fe或富铁FeX层的插入层。 X是选自总原子百分数小于50％的Ta，Hf，V，Co，Mo，Zr，Nb或Ti的非磁性金属元素（或元素）。 插入层的厚度在1至10埃之间，优选2至5埃，并且在TMR堆叠中，它们被插入到隧道势垒层和铁磁自由层或隧道势垒层之间的界面附近，以及 TMR堆叠中的Syap钉扎层的AP1层。 插入层限制了CoFeB和NiFe层中B和Ni的相互扩散，并阻止NiFe晶体生长。

    CPP device with improved current confining structure and process
    84.
    发明授权
    CPP device with improved current confining structure and process 有权
    CPP器件具有改进的电流限制结构和工艺

    公开(公告)号：US08477462B2

    公开(公告)日：2013-07-02

    申请号：US13691813

    申请日：2012-12-02

    Applicant: Headway Technologies, Inc.

    Inventor： Kunliang Zhang ,  Min Li ,  Yue Liu

    IPC: G11B5/33

    CPC classification number: G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

    Abstract: Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.

    Abstract translation: 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化。

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