摘要:
A first power-cutoff switch is disposed between a power line and an internal power line dedicated for a circuit block, and has a current supply capacity having the level at which ON-current can protect an external examination environment. A second power-cutoff switch is disposed between a power line and an internal power line, and has a current supply capacity having the level at which ON-current can supply consumed current of the circuit block. A detecting circuit detects that a voltage of the internal power line matches a reference voltage. The first power-cutoff switch is ON/OFF by an operation state of the circuit block. The second power-cutoff switch is ON by detecting the matching of the volumes with the detecting circuit and is OFF by the ON/OFF operation of the first power-cutoff switch.
摘要:
The semiconductor circuit device includes a power line receiving first voltage; each of internal circuits being provided with different operating voltages by the operation mode; a power supply circuit connected with one of internal circuits and the power line to provide second voltage lower than the first voltage to the one of internal circuits; and a control circuit controlling the power supply circuit in accordance with each of the operation modes, wherein when a change of a operation mode is performed, if a operating voltage after the change of a operation mode is higher than a operating voltage before the change of a operation mode, firstly the control circuit controls the power supply circuit to supply a second voltage higher than the operating voltage and secondly the control circuit controls the power supply circuit to supply the operation voltage after the change of a operation mode to the internal circuit.
摘要:
In a method for manufacturing a multilayer electronic component, after a plating layer for forming an external electrode is formed on an end surface of a laminate, conditions for heat-treating the laminate are set such that interdiffusion layers have ends which face internal electrodes and which are spaced from the end surface of the laminate at a distance of about 0.5 μm to about 1.9 μm.
摘要:
An information communication method includes transmitting a millimeter-band radio wave from a reception side, reflecting the transmitted radio wave at a transmission side while vibrating the transmitted radio wave corresponding to first information transmitted by the transmission side, and receiving the reflected radio wave at the reception side and reconstructing the first information based on a phase difference between the transmitted radio wave and the received radio wave.
摘要:
A method for manufacturing a multilayer electronic component includes a step of preparing a laminate which includes a plurality of stacked insulator layers and a plurality of internal electrodes extending along the interfaces between the insulator layers, and in which an end of each of the plurality of internal electrodes is exposed at a predetermined surface corresponding to one of the first and second end surfaces; a step of forming external electrodes on the predetermined surfaces; and a step of forming thick-film edge electrodes at edge portions. The step of forming external electrodes includes a step of attaching a plurality of conductive particles having a particle size of about 1 μm or more to the predetermined surfaces of the laminate, and a step of performing plating directly on the predetermined surfaces to which the conductive particles are attached.
摘要:
A method for manufacturing a ceramic electronic component includes the steps of preparing a ceramic body including a plurality of first internal electrodes and a plurality of second internal electrodes, processing the ceramic body to an internal electrode exposure rate of about 102% to about 153%, and plating the processed ceramic body to form a plated layer thereon.
摘要:
In a laminated ceramic electronic component, external terminal electrodes include plating films directly covering exposed portions of internal electrodes on end surfaces of a ceramic element assembly. On the boundaries between the end surfaces and principal surfaces of the ceramic element assembly, substantially rounded corners are provided, and the plating films are arranged such that the ends of the plating films stop at the corners and do not project from the principal surfaces.
摘要:
A multilayer ceramic electronic component including thin external terminal electrodes each having a superior bonding force to a ceramic base body is provided. In order to form the external terminal electrodes, after Cu plating films are deposited on exposed portions of internal electrodes by direct plating on a ceramic base body, a Cu liquid phase, an O2-containing liquid phase, and a Cu solid phase are generated between the Cu plating film and the ceramic base body by a heat treatment, so that Cu oxides are dispersed in the Cu plating film, at least near an interface with the ceramic base body. Since the Cu oxides function as an adhesive, a bonding force of the Cu plating film to the ceramic base body can be increased, and hence the external terminal electrode having a superior bonding force to the ceramic base body can be obtained.
摘要:
A semiconductor device includes: a first power line to supply a first voltage to a plurality of internal circuits; a second power line to supply the first voltage to the plurality of internal circuits; a first switch provided between said first power line and each of the plurality of internal circuits; a second switch provided between said second power line and each of the plurality of internal circuits; and a control circuit to control the first switch of a second internal circuit included in the plurality of the internal circuits based on the amounts of noise and voltage drop at power-on in a first circuit included in the plurality of internal circuits.
摘要:
A method for manufacturing a monolithic ceramic electronic component includes a plating substep of depositing precipitates primarily composed of a specific metal on an end of each of internal electrodes exposed at a predetermined surface of a laminate and growing the precipitates to coalesce into a continuous plated layer, wherein the specific metal is different from that of the internal electrodes, and the same or substantially the same metal that defines the internal electrodes is distributed throughout the plated layer.