摘要:
An electronic device includes a main body and a plurality of paper trays. The main body includes a mounting plate, and the mounting plate defines a paper outlet. A mounting bracket is secured to the main body. A control module is disposed on the mounting bracket. A driving member is connected to the paper trays. The control module is capable of causing the driving member to move the paper trays along a direction parallel to the mounting plate, so that one of the paper trays is aligned with the paper outlet.
摘要:
Gate structures of CMOS device and the method for manufacturing the same are provided. A substrate having an NMOS region, a PMOS region, and a work function modulation layer disposed on the NMOS region and the PMOS region is provided. A nitrogen doping process is performed to dope nitrogen into a portion of the work function modulation layer disposed on the PMOS region so as to form an N-rich work function modulation layer disposed on the PMOS region. A nonmetallic conductive layer is formed blanketly covering the work function modulation layer and the N-rich work function modulation layer. A portion of the nonmetallic conductive layer, the work function modulation layer, and the N-rich work function modulation layer is removed to form a first gate in the NMOS region and a second gate in the PMOS region.
摘要:
A printing device includes a main body and a paper holding device. The main body is capable of printing and dispensing paper. The paper holding device is secured to the main body and includes a bracket, a paper tray, a paper adjusting mechanism, and a punch mechanism. The bracket is secured to the main body. The paper tray is secured to the bracket for receiving the dispensed paper. The paper adjusting mechanism is capable of aligning the dispensed paper. The punch mechanism is capable of binding the dispensed paper. The main body dispenses the paper between the paper adjusting mechanism and the punch mechanism.
摘要:
A printer includes a main body capable of printing and outputting paper, a bracket attached to the main body, two sliding blocks, and a tray configured for receiving the paper. The bracket includes two sidewalls. A retaining member is secured to each sidewall. The sliding blocks are slidably attached to the sidewalls of the bracket. The tray is received in the bracket and has tray posts corresponding to the retaining members. The sliding blocks bring the tray to slide in the bracket. The retaining members have a first position, where the tray posts urge the retaining members to slide before passing across the retaining members, and a second position, where the tray posts are blocked by the retaining member when the tray is released from the sliding blocks.
摘要:
A paper sorting apparatus for an electronic device includes a chassis with a control module disposed therein, a paper transporting module accommodated in the chassis, and a plurality of paper trays attached to the chassis. The paper transporting module has a first end, that is pivotable, and a second end, that is attached to the control module. The control module is capable of rotating the second end about the first end and coupling the second end with one of the paper trays.
摘要:
Gate structures of CMOS device and the method for manufacturing the same are provided. A substrate having an NMOS region, a PMOS region, and a work function modulation layer disposed on the NMOS region and the PMOS region is provided. A nitrogen doping process is performed to dope nitrogen into a portion of the work function modulation layer disposed on the PMOS region so as to form an N-rich work function modulation layer disposed on the PMOS region. A nonmetallic conductive layer is formed blanketly covering the work function modulation layer and the N-rich work function modulation layer. A portion of the nonmetallic conductive layer, the work function modulation layer, and the N-rich work function modulation layer is removed to form a first gate in the NMOS region and a second gate in the PMOS region.
摘要:
In a memory card and accessing method and accessing system for the memory card, the accessing method and accessing system are adapted to data access between a memory card and a machine using a first operation system. The accessing method firstly checks whether the data in the memory card is stored according to a data storage type supporting both the first operation system and a second operation system. When the data is not stored according to the data storage type, the machine is prohibited from accessing the memory card. A version value is stored in the memory card, wherein the version value is a value different from a predetermined version value. The second operation system deems the memory card un-accessible when the version value is confirmed to be not the predetermined version value.
摘要:
A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.
摘要:
A system, method, and computer readable medium for extracting a key process parameter correlative to a selected device parameter are provided. In an embodiment, the key process parameter is determined using a gene map analysis. The gene map analysis includes grouping highly correlative process parameter and determining the correlation of a group to the selected device parameter. In an embodiment, the groups having greatest correlation to the selected device parameter are displayed in a correlation matrix and/or a gene map.
摘要:
A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used together to polish the substrate, wherein the high-selectivity slurry has a higher selectivity to the first material than to the second material.