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公开(公告)号:US10132677B2
公开(公告)日:2018-11-20
申请号:US15008410
申请日:2016-01-27
发明人: Chang-Sheng Chu , Yu-Tang Li , Yeh-Wen Lee , Chih-Hsun Fan , Lung-Pin Chung , Jyh-Chern Chen , Shuang-Chao Chung
IPC分类号: A61B5/1455 , A61B5/00 , G01J1/04 , H01L31/0203 , H01L31/0232 , H01L31/173 , G01J1/44 , H04B10/071 , G01J1/42 , G01J1/02 , G01J1/08 , H01L31/12 , H01L33/54 , H01L33/58
摘要: The present disclosure relates to an optical sensing accessory, an optical sensing device, and an optical sensing system. An optical sensing accessory, an optical sensing device, or an optical sensing system comprises a plurality of optical sensor modules and other electronic modules to achieve multi-site measurement. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory, an optical sensing device, or an optical sensing system and comprise the optical sensor module and other electronic modules to have further applications.
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72.
公开(公告)号:US20180294378A1
公开(公告)日:2018-10-11
申请号:US16006765
申请日:2018-06-12
IPC分类号: H01L33/08 , H01L27/15 , H01L33/38 , H01L21/3065 , H01L33/00 , H01L31/12 , H01L21/28 , H01L21/461 , H01L21/3213 , H01L21/311 , H01L25/16
CPC分类号: H01L33/08 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L25/167 , H01L27/156 , H01L31/12 , H01L33/00 , H01L33/38 , H01L2933/0016 , H01L2933/0033
摘要: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having—a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c),—an active layer (23), and—a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein—the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that—the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and—the first contact layer (41) and the second contact layer (42) run parallel to each other.
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公开(公告)号:US20180277606A1
公开(公告)日:2018-09-27
申请号:US15994054
申请日:2018-05-31
CPC分类号: H01L27/307 , H01L27/14601 , H01L27/1463 , H01L27/14636 , H01L31/12 , H01L51/0001 , H01L51/42 , H01L51/441 , H01L51/442 , H01L51/447 , H01L51/448
摘要: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region
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公开(公告)号:US20180190854A1
公开(公告)日:2018-07-05
申请号:US15736967
申请日:2016-05-18
发明人: Chris BOWER , Piers ANDREW , Richard WHITE
IPC分类号: H01L31/12 , H01L31/028 , H01L31/0352 , H01L33/00 , H01L33/34 , H01L27/144 , H01L27/15 , H01L31/18
CPC分类号: H01L31/125 , A61B5/0077 , A61B5/02 , A61B5/02416 , A61B5/1455 , A61B5/7485 , A61B2562/0233 , A61B2576/00 , H01L27/1446 , H01L27/156 , H01L31/028 , H01L31/035218 , H01L31/1804 , H01L33/0041 , H01L33/0054 , H01L33/34 , Y02E10/547
摘要: A single device for emitting and detecting photons. The device comprises a semiconductive layer (3), active material (5), further dielectric layer (17) and overlying electrode (25). In a first mode of operation an electrical field is applied between the semiconductive layer (3) and the overlying electrode (25). This enables photons to be emitted from the active material (5). In a second mode of operation, the semiconductive layer (3) constitutes a channel of a field effect transistor (23). The field effect transistor further comprises source electrode (11), drain electrode (15), gate electrode (13) and dielectric layer (19). Photons absorbed by the active material (5) causes charge to be transferred to the semiconductive layer (3), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.
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75.
公开(公告)号:US20180190838A1
公开(公告)日:2018-07-05
申请号:US15689976
申请日:2017-08-29
发明人: Karine Saxod , Alexandre Mas , Eric Saugier , Gaetan Lobascio , Benoit Besancon
IPC分类号: H01L31/0203 , H01L31/18 , H01L31/0232 , H01L31/02 , H01L31/12 , B29C45/14
CPC分类号: H01L31/0203 , B29C45/14065 , B29C45/14639 , B29C45/14778 , B29K2995/0026 , B29L2031/3481 , H01L31/02002 , H01L31/02325 , H01L31/02327 , H01L31/12 , H01L31/18 , H01L33/483
摘要: A cover for an electronic package is manufactured by placing an optical insert, having opposite faces and configured to allow light radiation to pass therethrough, between two opposite faces of a cavity of a mold in a position such that said optical faces of the optical insert make contact with said opposite faces of the cavity of the mold. A coating material is injected into the cavity and around the optical insert. The coating material is set to obtain a substrate that is overmolded around the optical insert so as to produce the cover. An electronic package includes an electronic chip mounted to a support substrate with the cover formed by the overmolded substrate mounted to the support substrate.
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公开(公告)号:US20180172903A1
公开(公告)日:2018-06-21
申请号:US15837173
申请日:2017-12-11
申请人: Massachusetts Institute of Technology , National University of Singapore , Nanyang Technological University
发明人: Wenjia Zhang , Bing Wang , Li Zhang , Zhaomin Zhu , Jurgen Michel , Soo-Jin Chua , Li-Shiuan Peh , Siau Ben Chiah , Eng Kian Kenneth Lee
IPC分类号: G02B6/12 , H01L33/32 , H01L33/06 , H01L33/12 , G02B6/42 , H01L31/153 , H01L31/12 , H01L31/0392 , H01L31/0352 , H01L31/0304 , H01L27/15 , H01L27/06 , H01L21/8258 , H01L33/00
CPC分类号: G02B6/12004 , G02B6/00 , G02B6/12 , G02B6/428 , G02B2006/121 , H01L21/8258 , H01L27/0688 , H01L27/15 , H01L31/02327 , H01L31/03044 , H01L31/03048 , H01L31/035236 , H01L31/035281 , H01L31/0392 , H01L31/105 , H01L31/12 , H01L31/125 , H01L31/153 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , Y02E10/544
摘要: A method of forming an integrated circuit is disclosed. The method includes: (i) forming at least a pair of optoelectronic devices from at least a first wafer material arranged on a semiconductor substrate, the first wafer material different to silicon; (ii) etching the first wafer material to form a first recess to be filled with a second material; (iii) processing the second material to form a waveguide for coupling the pair of optoelectronic devices to define an optical interconnect; and (iv) bonding at least one partially processed CMOS device layer having at least one transistor to the second semiconductor substrate to form the integrated circuit, the partially processed CMOS device layer arranged adjacent to the optical interconnect. An integrated circuit is also disclosed.
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公开(公告)号:US09933871B2
公开(公告)日:2018-04-03
申请号:US14923960
申请日:2015-10-27
发明人: In-Cheol Kim , Ji-Hong Park , Hyun-Ju Lee , Il-Ho Lee , Moon-Sung Choi , Seong-Mo Hwang , Ki-Hyuk Kim , Seung-Ho Nam
IPC分类号: G06F3/041 , G02F1/1362 , H01L27/12 , H01L23/02 , G06F3/044 , H01L27/146 , G02F1/1333 , H01L31/0232 , H01L31/12 , H01L27/02
CPC分类号: G06F3/0412 , G02F1/13338 , G02F1/136204 , G06F3/044 , G06F2203/04112 , H01L27/027 , H01L27/1214 , H01L27/14623 , H01L31/0232 , H01L31/12
摘要: A sensor substrate includes a base substrate, a black matrix pattern, a sensing electrode pattern, a driving electrode pattern, and at least one bridge line. The black matrix pattern is disposed on the base substrate and divides the base substrate into a light transmission area and a light blocking area. The sensing electrode pattern includes a plurality of first unit patterns arranged in association with a first direction. The driving electrode pattern includes a plurality of second unit patterns arranged in association with a second direction and disposed adjacent to the plurality of first unit patterns. The at least one bridge line is connected between at least two of the plurality of first unit patterns or between at least two of the plurality of second unit patterns.
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公开(公告)号:US20180062003A1
公开(公告)日:2018-03-01
申请号:US15340216
申请日:2016-11-01
发明人: Jing-En LUAN , Laurent HERARD , Yong Jiang LEI
IPC分类号: H01L31/0203 , H01L31/12 , H01L31/18
CPC分类号: H01L31/0203 , G01S7/481 , G01S7/4813 , G01S17/026 , G01S17/46 , H01L25/50 , H01L31/125 , H01L31/153 , H01L31/173 , H01L31/18
摘要: One or more embodiments are directed to system in package (SiP) for optical devices, such as proximity sensing or optical ranging devices. One embodiment is directed to an optical sensor package that includes a substrate, a sensor die coupled to the substrate, a light-emitting device coupled to the substrate, and a cap. The cap is positioned around side surfaces of the sensor die and covers at least a portion of the substrate. The cap includes first and second sidewalls, an inner wall having first and second side surfaces and a mounting surface, and a cover in contact with the first and second sidewalls and the inner wall. The first and second side surfaces are transverse to the mounting surface, and the inner wall includes an opening extending into the inner wall from the mounting surface. A first adhesive material is provided on the sensor die and at least partially within the opening, and secures the inner wall to the sensor die.
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公开(公告)号:US20180033905A1
公开(公告)日:2018-02-01
申请号:US15665240
申请日:2017-07-31
IPC分类号: H01L31/12 , H01L31/0376 , H01L31/0224 , H01L31/18 , H01L31/054 , H01L31/20 , H02S40/38 , H01L31/0216 , H01L31/0352 , H01L33/34 , H01L33/42 , H01L33/46 , H01L33/00 , H01L33/22 , H01L33/24 , H01L31/02
CPC分类号: H01L31/125 , H01L31/02008 , H01L31/0216 , H01L31/022475 , H01L31/035281 , H01L31/03762 , H01L31/042 , H01L31/0504 , H01L31/0547 , H01L31/0747 , H01L31/1868 , H01L31/1884 , H01L31/202 , H01L33/0058 , H01L33/0095 , H01L33/22 , H01L33/24 , H01L33/34 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H02S40/38 , Y02E10/52
摘要: An apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon substrate. The heterojunction structure includes a first layered structured deposited on a first side of the silicon substrate. The first layered structured includes a first amorphous intrinsic silicon layer, an amorphous n-type or p-type silicon layer, and a transparent conductive layer. The second layered structure includes a second amorphous intrinsic silicon layer, an amorphous p-type or n-type silicon layer, and a transparent conductive layer. The heterostructure structure is configured to operate as a photovoltaic cell and an infrared light emitting diode.
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公开(公告)号:US20180026152A1
公开(公告)日:2018-01-25
申请号:US15724162
申请日:2017-10-03
申请人: Apple Inc.
发明人: Eric L. Benson , Bryan W. Posner , Christopher L. Boitnott , Dinesh C. Mathew , Jun Qi , Robert Y. Cao , Victor H. Yin
IPC分类号: H01L31/12 , G06F3/041 , G06F1/16 , H01L31/18 , G02F1/1333 , G02F1/1335 , G02F1/1362
CPC分类号: H01L31/12 , G02F1/133512 , G02F1/133514 , G02F1/1362 , G02F2001/133388 , G02F2201/58 , G06F1/1643 , G06F1/1686 , G06F3/041 , H01L31/18
摘要: A display may include a color filter layer, a liquid crystal layer, and a thin-film transistor layer. A camera window may be formed in the display to accommodate a camera. The camera window may be formed by creating a notch in the thin-film transistor layer that extends inwardly from the edge of the thin-film transistor layer. The notch may be formed by scribing the thin-film transistor layer around the notch location and breaking away a portion of the thin-film transistor layer. A camera window may also be formed by grinding a hole in the display. The hole may penetrate partway into the thin-film transistor layer, may penetrate through the transistor layer but not into the color filter layer, or may pass through the thin-film transistor layer and partly into the color filter layer.
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