公开(公告)号：US20090283749A1

公开(公告)日：2009-11-19

申请号：US12120933

申请日：2008-05-15

Applicant: Mark A. Eriksson ,  Max G. Lagally ,  Arnold Melvin Kiefer

Inventor： Mark A. Eriksson ,  Max G. Lagally ,  Arnold Melvin Kiefer

IPC: H01L31/00 ,  H01L21/02

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01L31/035254 ,  H01S5/021 ,  H01S5/3407 ,  H01S5/3427 ,  Y10S438/962

Abstract: A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.

Abstract translation: 诸如量子级联激光器的量子阱光电器件由从基片物理移除并机械组装成叠层的单晶纳米级膜构成。

公开(公告)号：US07609738B2

公开(公告)日：2009-10-27

申请号：US11929061

申请日：2007-10-30

Applicant: Richard P. Leavitt ,  John L. Bradshaw

Inventor： Richard P. Leavitt ,  John L. Bradshaw

IPC: H01S5/00

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/12

Abstract: Quantum-cascade lasers are provided with an active section in which relaxation of carriers from a lower laser level is provided by three or more phonon-assisted transitions to levels within the active section whose energies are below the energy of the lower laser level. The gain region of the laser consists of alternating active and injector sections, with an injection barrier inserted between each injector section and the adjacent active section, and an exit barrier inserted between each active section and the adjacent injector section. The active section comprises a sufficient number of quantum wells separated by quantum barriers to produce the desired energy-level structure consisting of an upper laser level, a lower laser level, and at least three levels that have lower energies than the lower laser level, with the separation of adjacent energy levels below and including the lower laser level that are at least equal to the energy of the quantum well material's longitudinal optical phonon.

Abstract translation: 量子级联激光器设置有有源部分，其中来自较低激光器级的载流子的弛豫由三个或更多个声子辅助转换提供到能量低于较低激光器级的能量的有效部分内的电平。 激光器的增益区域由交替的有源和喷射器部分组成，其中插入在每个喷射器部分和相邻的活动部分之间的喷射屏障以及插入在每个激活部分和相邻喷射器部分之间的出口屏障。 有源部分包括由量子势垒隔开的足够数量的量子阱，以产生由上激光水平，较低激光水平以及具有比较低激光水平低的能量的至少三个等级组成的期望能量级结构，其中， 相邻能级之间的分离低于并且包括至少等于量子阱材料的纵向光学声子的能量的较低激光水平。

公开(公告)号：US20080069164A1

公开(公告)日：2008-03-20

申请号：US11979294

申请日：2007-11-01

Applicant: Tadataka Edamura ,  Naota Akikusa

Inventor： Tadataka Edamura ,  Naota Akikusa

IPC: H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/32366 ,  H01S5/3402 ,  H01S5/34313

Abstract: A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.

Abstract translation: 通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11，通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。 此外，在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构，其包括波导芯层12和14，每个波导芯层12和14由n型GaInNA层形成，其为 形成为与GaAs衬底10晶格匹配的N（氮）的III-V族化合物半导体以及由n + GaAs层。 从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。

公开(公告)号：US07266279B1

公开(公告)日：2007-09-04

申请号：US11090436

申请日：2005-03-25

Applicant: Daniel Yap ,  David Chow ,  Authi Narayanan

Inventor： Daniel Yap ,  David Chow ,  Authi Narayanan

IPC: G02B8/10 ,  G02B8/12 ,  H01S5/00

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/041

Abstract: An apparatus and methods for an optically pumped laser that has a cascade of light-emitting interband transitions are disclosed. The apparatus disclosed contains multistep interband cascade regions able to generate a plurality of photons for a pump photon absorbed from an optical pump source. The methods disclosed teach how to produce a plurality of photons for a pump photon absorbed from an optical pump source.

Abstract translation: 公开了一种具有级联发光的带间跃迁的光泵浦激光器的装置和方法。 所公开的装置包含能够为从光泵浦源吸收的泵浦光子产生多个光子的多步带间级联区域。 所公开的方法教导了如何产生用于从光泵浦源吸收的泵浦光子的多个光子。

公开(公告)号：US20060215718A1

公开(公告)日：2006-09-28

申请号：US11204971

申请日：2005-08-17

Applicant: Hiroaki Yasuda ,  Iwao Hosako

Inventor： Hiroaki Yasuda ,  Iwao Hosako

IPC: H01S5/00

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S1/02 ,  H01S5/34306 ,  H01S2302/02

Abstract: A quantum cascade laser is provided that is constituted as a superlattice device configured by repeatedly overlaying AlSb or GaAlSb layers and GaSb layers and forming electrode layers at the opposite ends thereof, wherein the thickness of the GaSb layers constituting quantum wells for performing stimulated emission of light is defined so that the energy difference formed between the ground state and the first excited state in the GaSb layers becomes the LO phonon energy of GaSb. The quantum cascade laser lases at lower frequency than conventionally and has a structure that is easy to fabricate.

Abstract translation: 提供了一种量子级联激光器，其构成为通过重复地覆盖AlSb或GaAlSb层和GaSb层并在其相对端形成电极层而构成的超晶格器件，其中构成量子阱的GaSb层的厚度用于执行受激发光 被定义为使得GaSb层中的基态和第一激发态之间形成的能量差成为GaSb的LO声子能。 量子级联激光器比传统的频率低，具有易于制造的结构。

公开(公告)号：US20060203865A1

公开(公告)日：2006-09-14

申请号：US11076599

申请日：2005-03-09

Applicant: David Bour ,  Scott Corzine

Inventor： David Bour ,  Scott Corzine

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/2226 ,  H01S5/3402

Abstract: A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.

Abstract translation: 掩埋异质结量子级联激光器结构使用反向偏置结实现电流阻塞。 可以调整结构的掺杂和脊宽以提供有效的模式鉴别。

公开(公告)号：US07081985B2

公开(公告)日：2006-07-25

申请号：US10343929

申请日：2001-07-27

Applicant: Christopher C. Phillips

Inventor： Christopher C. Phillips

IPC: G02F2/02 ,  H01S5/34

CPC classification number: B82Y20/00 ,  H01S3/108 ,  H01S5/0604 ,  H01S5/0608 ,  H01S5/3402 ,  H01S5/5054

Abstract: An apparatus (8, 14) for wavelength shifting light from a first frequency ν1 to a second frequency ν2 is provided in the form of a semiconductor intersubband laser (8) lasing at its intersubband frequency ν3. The output light is wavelength shifted to a frequency ν2=ν1+nν3, where n is a non-zero integer ( . . . , −2, −1, 1, 2, . . . ). The wavelength shifted light ν2 may be amplitude modulated and/or frequency modulated to impart information upon it. The wavelength shifting is a coherent process allowing for the possibility of coherent communication techniques to be used.

Abstract translation: 以半导体子带间激光器（8）的形式提供用于将光从第一频率nu 1> 1波长移位到第二频率nu 2 <2>的装置（8,14） 在其子带间隙nu 3 3处发射激光。 输出光被波长移位到频率nu 2 n N n N n N n N n N 3，其中n是非零整数（...）。 。，-2，-1,1,2，...）。 波长偏移光nu 2 2可以被幅度调制和/或频率调制以在其上传递信息。 波长偏移是一个相干过程，允许使用相干通信技术的可能性。

公开(公告)号：US20060133437A1

公开(公告)日：2006-06-22

申请号：US11016740

申请日：2004-12-21

Applicant: Stephen Forrest ,  Vinod Menon ,  Zoltan Soos

Inventor： Stephen Forrest ,  Vinod Menon ,  Zoltan Soos

IPC: H01S3/14

CPC classification number: B82Y20/00 ,  H01S5/18305 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3402 ,  H01S5/36

Abstract: An unipolar organic injection laser in which electrically-stimulated intraband transitions result in lasing. An active region includes at least one organic injector layer and at least one organic emitter layer. Each organic emitter layer has a first energy level and a second energy level on a same side of an energy gap defined by a conduction band and a valance band. Charge carriers are injected through the organic injector layer into the first energy level of the organic emitter layer when a voltage is applied across active region. The difference in energy between the first and second energy levels produces radiative emissions when charge carriers transition from the first energy level to the second energy level. Population inversion is maintained between the first and second energy levels, producing stimulated emission and lasing.

Abstract translation: 单极有机注入激光器，其中电刺激的内部转换导致激光。 有源区包括至少一个有机注入层和至少一个有机发射极层。 每个有机发射极层在由导带和价带限定的能隙的同一侧上具有第一能级和第二能级。 当在有源区域上施加电压时，电荷载体通过有机注入器层注入到有机发射极层的第一能级中。 当电荷载流子从第一能级跃迁到第二能量级时，第一和第二能量级之间的能量差异产生辐射发射。 在第一和第二能级之间维持人口反演，产生受激发射和激光。

公开(公告)号：US20050276298A1

公开(公告)日：2005-12-15

申请号：US10865036

申请日：2004-06-10

Applicant: Marc Fischer ,  Alfred Forchel

Inventor： Marc Fischer ,  Alfred Forchel

IPC: H01S5/12 ,  H01S5/34 ,  H01S5/00

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/1021 ,  H01S5/12 ,  H01S5/1215

Abstract: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.

Abstract translation: 提供了一种单极半导体激光器，其中有源区被夹在上包层和下包层之间的引导结构中，下包层位于半导体衬底上。 单极半导体激光器包括在限定激光腔的端镜之间从端到端延伸的凸脊部分。 脊部有助于光学和电气限制。 脊形波导被分成多个空腔段（至少两个）。 晶格结构可以布置到这些腔段。 每个空腔段与上部金属电极接触。 耦合到半导体衬底的底表面的金属电极便于通过器件的电流注入。

公开(公告)号：US20050226296A1

公开(公告)日：2005-10-13

申请号：US11021095

申请日：2004-12-21

Applicant: Dan Botez ,  Ali Mirabedini ,  Dapeng Xu ,  Luke Mawst

Inventor： Dan Botez ,  Ali Mirabedini ,  Dapeng Xu ,  Luke Mawst

IPC: H01S5/00 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3419 ,  H01S5/34313

Abstract: A semiconductor laser and light emitting device is defined. The device comprises an electron injector and an active region adjacent to the electron injector. The active region includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.

Abstract translation: 定义半导体激光器和发光器件。 该装置包括电子注入器和邻近电子注入器的有源区。 有源区域包括至少一个具有与量子阱或阱的任一侧相邻的势垒层的深量子阱，使得从电子注入器注入到量子阱的高能量级的电子放松到较低的能级， 并且被发射到超出有源区域的最后阻挡层的区域。 电子注入器包括量子阱层。 每个深量子阱的底部或有源区中的阱的能量低于电子注入器中的量子阱层的底部。 该装置还可以包括至少两个阶段，其中每个阶段包含电子注入器和有源区域。 这些级由允许电子从一级的有源区转移到下一级的电子注入器的半导体层分开。