MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM
    71.
    发明申请
    MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM 有权
    多束光束粒子光学系统

    公开(公告)号:US20110163244A1

    公开(公告)日:2011-07-07

    申请号:US13050875

    申请日:2011-03-17

    Abstract: The invention relates to a multiple be charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. En further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

    Abstract translation: 本发明涉及一种多带电粒子光学系统,其包括具有至少一个具有孔的电极的静电透镜结构,其中由所述孔处的所述电极实现的透镜场的有效尺寸最小化。 该系统可以包括发散的带电粒子束部分,其中包括透镜结构。 透镜的物理尺寸最终变小,特别是小于1mm,更特别地小于几十微米。 进一步阐述,透镜与限流孔结合,相对于所述结构的透镜对准,使得由所述透镜中的所述电流限制孔影响的虚拟孔位于最小化像差总数的最佳位置。

    TEM with aberration corrector and phase plate
    72.
    发明授权
    TEM with aberration corrector and phase plate 有权
    TEM与像差校正器和相位板

    公开(公告)号:US07915584B2

    公开(公告)日:2011-03-29

    申请号:US12370542

    申请日:2009-02-12

    CPC classification number: H01J37/153 H01J37/263 H01J2237/2614

    Abstract: The invention relates to a TEM with a corrector (330) to improve the image quality and a phase plate (340) to improve contrast. The improved TEM comprises a correction system completely placed between the objective lens and the phase plate, and uses the lenses of the corrector to form a magnified image of the diffraction plane on the phase plate.

    Abstract translation: 本发明涉及具有改善图像质量的校正器(330)和改善对比度的相位板(340)的TEM。 改进的TEM包括完全放置在物镜和相位板之间的校正系统,并且使用校正器的透镜在相位板上形成衍射平面的放大图像。

    Controlling the characteristics of implanter ion-beams
    73.
    发明授权
    Controlling the characteristics of implanter ion-beams 有权
    控制注入离子束的特性

    公开(公告)号:US07888660B2

    公开(公告)日:2011-02-15

    申请号:US11341838

    申请日:2006-01-27

    Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

    Abstract translation: 一种满足日益增长的要求的方法和装置,用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能:(1)宽幅调节工件上的带状光束的宽度; (2)纠正带状横梁宽度的强度分布不准确; (3)关于X轴和Y轴的独立转向; (4)工件入射角校正; 和(5)空间费用引起的光束膨胀效应的近似补偿。 在实际情况下,这些元件的组合允许源和工件之间的带状光束膨胀到350毫米,具有良好的均匀性和角度精度。 此外,该方法和装置可用于沿着光束线引入四极场。

    Monochromator and scanning electron microscope using the same
    74.
    发明授权
    Monochromator and scanning electron microscope using the same 有权
    单色器和扫描电子显微镜使用相同

    公开(公告)号:US07838827B2

    公开(公告)日:2010-11-23

    申请号:US11987018

    申请日:2007-11-26

    CPC classification number: H01J37/05 H01J37/153 H01J37/28

    Abstract: An invention providing a scanning electron microscope composed of a monochromator capable of high resolution, monochromatizing the energy and reducing chromatic aberrations without significantly lowering the electrical current strength of the primary electron beam. A scanning electron microscope is installed with a pair of sectorial magnetic and electrical fields having opposite deflection directions to focus the electron beam and then limit the energy width by means of slits, and another pair of sectorial magnetic and electrical fields of the same shape is installed at a position forming a symmetrical mirror versus the surface containing the slits. This structure acts to cancel out energy dispersion at the object point and symmetrical mirror positions, and by spatially contracting the point-converged spot beam with a converging lens system, improves the image resolution of the scanning electron microscope.

    Abstract translation: 本发明提供一种扫描电子显微镜,该扫描电子显微镜由能够高分辨率,单色化能量和降低色差的单色仪组成,而不会显着降低一次电子束的电流强度。 扫描电子显微镜安装有一对具有相反偏转方向的扇形磁场和电场,以聚焦电子束,然后通过狭缝限制能量宽度,并且安装相同形状的另一对扇形磁场和电场 在与包含狭缝的表面形成对称镜的位置处。 该结构用于抵消物点和对称镜位置的能量分散,并通过会聚透镜系统空间收缩点聚光点光束,提高扫描电子显微镜的图像分辨率。

    Technique for reducing magnetic fields at an implant location
    75.
    发明授权
    Technique for reducing magnetic fields at an implant location 有权
    减少植入位置磁场的技术

    公开(公告)号:US07807983B2

    公开(公告)日:2010-10-05

    申请号:US11622619

    申请日:2007-01-12

    Abstract: A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.

    Abstract translation: 公开了一种用于在植入位置减小磁场的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于减少植入位置处的磁场的装置和方法。 该装置和方法可以包括校正棒组件,其包括一组磁芯构件,沿着该组磁芯构件分布的多个线圈,以及连接元件,用于将一组磁芯构件的端部彼此连接以形成 一个矩形校正器配置。 校正棒组件可以定位在磁偏转器的出口区域处,以改善具有从磁偏转器离开的多个子束的带状束的均匀性,并且矩形校正器配置可以提供期望的磁场夹紧动作。

    Corrector for axial and off-axial beam paths
    76.
    发明授权
    Corrector for axial and off-axial beam paths 有权
    用于轴向和离轴光束路径的校正器

    公开(公告)号:US07807965B2

    公开(公告)日:2010-10-05

    申请号:US12230632

    申请日:2008-09-03

    CPC classification number: H01J37/153 H01J37/26 H01J2237/1534

    Abstract: A corrector (1) for the axial and off-axial beam path of a particle-optical system, comprises a first (10) and a second (20) correction piece, which are disposed one behind the other in the beam path (2) on an optical axis (3). Each correction piece (10, 20) comprises four successive multipole elements (11, 12, 13, 14; 24, 23, 22, 21) disposed symmetrically with respect to a center plane (5) and with the following fields: wherein the first (11; 24) and the fourth (14; 21) multipole elements of the multipole elements (11, 12, 13, 14; 24, 23, 22, 21) are used to generate quadrupole fields (11′, 14′; 24′, 21′) and the second (12; 23) and third (13; 22) are used to generate octupole fields (12′″, 13′″; 23′″,22′″) and quadrupole fields (12′, 13′; 23′,22′), wherein the latter are superposed magnetic (12′, 13′; 23′, 22′) and electric fields (12″, 13″; 23″, 22″), wherein the quadrupole fields (11′, 12′, 13′, 14′; 24′, 23′, 22′, 21′) of all four multipole elements (11, 12, 13, 14; 24, 23, 22,21) are rotated from one to the next through 90°. An astigmatism of third order is corrected by a central multipole element disposed in the center plane and generating an octupole field.

    Abstract translation: 一种用于粒子光学系统的轴向和非轴向光束路径的校正器(1)包括在光束路径(2)中一个在另一个之后设置的第一(10)和第二(20)校正片, 在光轴(3)上。 每个校正件(10,20)包括相对于中心平面(5)对称设置的四个连续的多极元件(11,12,13,14,24,23,22,21),并具有以下场:其中第一 (11; 24)和多极元件(11,12,13,14; 24,23,22,21)的第四(14; 21)多极元件用于产生四极场(11',14'; 24 ',21')和第二(12; 23)和第三(13; 22)用于产生八极场(12“,13”“23”“22”“)和四极场(12' 13'; 23',22'),其中后者是重叠的磁(12',13'; 23',22')和电场(12“,13”; 23“,22”),其中四极场 所有四个多极元件(11,12,13,14; 24,23,22,21)的所述四个多极元件(11,12,13,14; 24,23,22,21)的所述四个多极元件(11',12',13',14'; 24',23',22',21' 一个到下一个到90°。 通过设置在中心平面中的中心多极元件校正三阶散光并产生八极场。

    High mass resolution low aberration analyzer magnet for ribbon beams and the system for ribbon beam ion implanter
    77.
    发明申请
    High mass resolution low aberration analyzer magnet for ribbon beams and the system for ribbon beam ion implanter 失效
    用于带状光束的高质量分辨率低像差分析器磁体和用于带状束离子注入机的系统

    公开(公告)号:US20100243879A1

    公开(公告)日:2010-09-30

    申请号:US12658679

    申请日:2010-02-12

    Abstract: The present invention provides a mass analyzing magnet which can bend a very wide charged particle ribbon beams through angles between 90 to 200 degrees. The shorter dimension of the ribbon beam is aligned with the magnetic field. The magnet can focus the longer dimension of the ribbon beam through a resolving slot inside the magnet for mass or momentum analysis. The magnet pole is shaped to increase the mass resolving power and to provide the focusing force in the direction of the shorter dimension of the ribbon beam. This magnet can achieve high mass resolving power with very small system aberrations for very wide ribbon beam. This feature is of significant value, for example, in the ion implantation industry. The ribbon beam width can be 300 mm, 450 mm and even 1000 mm. Integrated with the present invention, the ion implanter systems can be built to provide mass analyzed ribbon beams for various applications. The system will have much lower cost and much better ribbon beam quality than the ion implanters which are using conventional mass analyzing magnet.

    Abstract translation: 本发明提供一种质量分析磁体,其能够使非常宽的带电粒子束弯曲角度在90至200度之间。 带状束的较短尺寸与磁场对准。 磁体可以将带状光束的较长尺寸聚焦在磁体内的分辨槽以进行质量或动量分析。 磁极被成形为增加质量分辨能力并且提供在带状束的较短尺寸方向上的聚焦力。 该磁体可以实现高质量分辨率功率,对于非常宽的带状束具有非常小的系统像差。 这个特征具有重要价值,例如在离子注入工业中。 带束宽度可以是300mm,450mm甚至1000mm。 与本发明相结合,可以构建离子注入机系统以提供用于各种应用的质量分析的带状束。 与使用常规质量分析磁体的离子注入机相比,该系统将具有更低的成本和更好的带束质量。

    Corrector
    78.
    发明授权
    Corrector 有权
    校正者

    公开(公告)号:US07781742B2

    公开(公告)日:2010-08-24

    申请号:US12213493

    申请日:2008-06-20

    Applicant: Joachim Zach

    Inventor: Joachim Zach

    Abstract: The invention concerns a corrector (10) for chromatic and aperture aberration correction in a scanning electron microscope or a scanning transmission electron microscope, comprising four multipole elements (1, 2, 3, 4) which are consecutively disposed in the optical path (9), the first (1) and fourth (4) of which are used to generate quadrupole fields (5, 6) and the second (2) and third (3) of which are used to generate octupole fields (11, 12) and quadrupole fields (7, 7′, 8, 8′), wherein the latter are superposed magnetic (7, 8) and electric (7′, 8′) fields, and wherein the quadrupole fields (5, 6, 7, 8) of all four multipole elements (1, 2, 3, 4) are successively rotated with respect to one another through 90°. Elimination of errors up to fifth order can be realized with a corrector (10) of this type in that the second (2) and the third (3) multipole elements are designed as twelve-pole elements, and an additional twelve-pole element (13) is inserted between the second (2) and the third (3) multipole element, and is loaded with current and/or voltage, such that an octupole field (14) is generated that is superposed by a twelve-pole field (15).

    Abstract translation: 本发明涉及一种用于扫描电子显微镜或扫描透射电子显微镜中的彩色和孔径像差校正的校正器(10),包括连续设置在光路(9)中的四个多极元件(1,2,3,4) ,其第一(1)和第四(4)用于产生四极场(5,6)和第二(2)和第三(3)用于产生八极场(11,12)和四极杆 (7,7',8,8'),其中后者是重叠的磁(7,8)和电(7',8')场,并且其中四极场(5,6,7,8) 所有四个多极元件(1,2,3,4)相对于彼此依次旋转90°。 可以用这种校正器(10)来实现高达五级的误差的消除,因为第二(2)和第三(3)多极元件被设计为十二极元件和另外的十二极元件 13)插入在第二(2)和第三(3)多极元件之间,并且被加载电流和/或电压,使得产生由十二极场(15)叠加的八极场(14) )。

    Electron Beam Apparatus And Method of Operating The Same
    79.
    发明申请
    Electron Beam Apparatus And Method of Operating The Same 有权
    电子束装置及其操作方法

    公开(公告)号:US20100140471A1

    公开(公告)日:2010-06-10

    申请号:US12623510

    申请日:2009-11-23

    Abstract: An electron beam apparatus is offered which can well detect backscattered electrons or both backscattered electrons and secondary electrons if an electron detector is disposed above an objective lens in the apparatus. The electron beam apparatus has an electron beam source for emitting an electron beam accelerated by a given accelerating voltage, the objective lens for focusing the electron beam emitted from the beam source onto a specimen, scan coils for scanning the focused beam over the specimen, and the electron detector located above the objective lens and provided with a hole permitting passage of the beam. The detector has an electrode for producing an electric field that attracts the electrons produced from the specimen in response to the electron beam irradiation. Correction coils for correcting deflection of the beam caused by the electric field are located below the detector.

    Abstract translation: 如果电子检测器设置在装置中的物镜上方,则提供一种电子束装置,其可以良好地检测反向散射电子或两个后向散射电子和二次电子。 电子束装置具有用于发射由给定的加速电压加速的电子束的电子束源,用于将从光束源发射的电子束聚焦到样本上的物镜,用于扫描聚焦光束在样本上的扫描线圈,以及 该电子探测器位于物镜上方并设置有允许光束通过的孔。 检测器具有用于产生电场的电极,其响应于电子束照射而吸引从样品产生的电子。 用于校正由电场引起的光束偏转的校正线圈位于检测器下方。

    Charged particle beam apparatus, aberration correction value calculation unit therefor, and aberration correction program therefor
    80.
    发明授权
    Charged particle beam apparatus, aberration correction value calculation unit therefor, and aberration correction program therefor 有权
    带电粒子束装置,其像差校正值计算单元及其像差校正程序

    公开(公告)号:US07714286B2

    公开(公告)日:2010-05-11

    申请号:US12121924

    申请日:2008-05-16

    Abstract: A charged particle beam apparatus includes: a correction image acquisition part 52 for making a detector 20 acquire items of two-dimensional image data at different focal positions; a directional differentiation operation part 53 for obtaining directional derivative values in a plurality of directions for each of the items of two-dimensional image data at different focal positions; an aberration parameter calculation part 54 for obtaining aberration parameters according to previously determined methods by using the directional derivative values in a plurality of directions for each of the items of two-dimensional image data; an aberration correction value calculation part 55 for obtaining correction values for aberrations by using the aberration parameters; and a control part 56 for setting the correction values in a correction optical system control means to make an aberration corrector 16 correct the aberrations.

    Abstract translation: 带电粒子束装置包括:校正图像获取部52,用于使检测器20获取不同焦点位置处的二维图像数据项; 方向微分运算部53,用于在不同的焦点位置获得每个二维图像数据项的多个方向的方向导数值; 像差参数计算部54,用于根据先前确定的方法通过对于每个二维图像数据使用多个方向上的方向导数值来获得像差参数; 用于通过使用像差参数获得像差的校正值的像差校正值计算部55; 以及用于在校正光学系统控制装置中设置校正值以使像差校正器16校正像差的控制部分56。

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