Abstract:
The invention relates to a multiple be charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. En further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.
Abstract:
The invention relates to a TEM with a corrector (330) to improve the image quality and a phase plate (340) to improve contrast. The improved TEM comprises a correction system completely placed between the objective lens and the phase plate, and uses the lenses of the corrector to form a magnified image of the diffraction plane on the phase plate.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Abstract:
An invention providing a scanning electron microscope composed of a monochromator capable of high resolution, monochromatizing the energy and reducing chromatic aberrations without significantly lowering the electrical current strength of the primary electron beam. A scanning electron microscope is installed with a pair of sectorial magnetic and electrical fields having opposite deflection directions to focus the electron beam and then limit the energy width by means of slits, and another pair of sectorial magnetic and electrical fields of the same shape is installed at a position forming a symmetrical mirror versus the surface containing the slits. This structure acts to cancel out energy dispersion at the object point and symmetrical mirror positions, and by spatially contracting the point-converged spot beam with a converging lens system, improves the image resolution of the scanning electron microscope.
Abstract:
A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.
Abstract:
A corrector (1) for the axial and off-axial beam path of a particle-optical system, comprises a first (10) and a second (20) correction piece, which are disposed one behind the other in the beam path (2) on an optical axis (3). Each correction piece (10, 20) comprises four successive multipole elements (11, 12, 13, 14; 24, 23, 22, 21) disposed symmetrically with respect to a center plane (5) and with the following fields: wherein the first (11; 24) and the fourth (14; 21) multipole elements of the multipole elements (11, 12, 13, 14; 24, 23, 22, 21) are used to generate quadrupole fields (11′, 14′; 24′, 21′) and the second (12; 23) and third (13; 22) are used to generate octupole fields (12′″, 13′″; 23′″,22′″) and quadrupole fields (12′, 13′; 23′,22′), wherein the latter are superposed magnetic (12′, 13′; 23′, 22′) and electric fields (12″, 13″; 23″, 22″), wherein the quadrupole fields (11′, 12′, 13′, 14′; 24′, 23′, 22′, 21′) of all four multipole elements (11, 12, 13, 14; 24, 23, 22,21) are rotated from one to the next through 90°. An astigmatism of third order is corrected by a central multipole element disposed in the center plane and generating an octupole field.
Abstract:
The present invention provides a mass analyzing magnet which can bend a very wide charged particle ribbon beams through angles between 90 to 200 degrees. The shorter dimension of the ribbon beam is aligned with the magnetic field. The magnet can focus the longer dimension of the ribbon beam through a resolving slot inside the magnet for mass or momentum analysis. The magnet pole is shaped to increase the mass resolving power and to provide the focusing force in the direction of the shorter dimension of the ribbon beam. This magnet can achieve high mass resolving power with very small system aberrations for very wide ribbon beam. This feature is of significant value, for example, in the ion implantation industry. The ribbon beam width can be 300 mm, 450 mm and even 1000 mm. Integrated with the present invention, the ion implanter systems can be built to provide mass analyzed ribbon beams for various applications. The system will have much lower cost and much better ribbon beam quality than the ion implanters which are using conventional mass analyzing magnet.
Abstract:
The invention concerns a corrector (10) for chromatic and aperture aberration correction in a scanning electron microscope or a scanning transmission electron microscope, comprising four multipole elements (1, 2, 3, 4) which are consecutively disposed in the optical path (9), the first (1) and fourth (4) of which are used to generate quadrupole fields (5, 6) and the second (2) and third (3) of which are used to generate octupole fields (11, 12) and quadrupole fields (7, 7′, 8, 8′), wherein the latter are superposed magnetic (7, 8) and electric (7′, 8′) fields, and wherein the quadrupole fields (5, 6, 7, 8) of all four multipole elements (1, 2, 3, 4) are successively rotated with respect to one another through 90°. Elimination of errors up to fifth order can be realized with a corrector (10) of this type in that the second (2) and the third (3) multipole elements are designed as twelve-pole elements, and an additional twelve-pole element (13) is inserted between the second (2) and the third (3) multipole element, and is loaded with current and/or voltage, such that an octupole field (14) is generated that is superposed by a twelve-pole field (15).
Abstract:
An electron beam apparatus is offered which can well detect backscattered electrons or both backscattered electrons and secondary electrons if an electron detector is disposed above an objective lens in the apparatus. The electron beam apparatus has an electron beam source for emitting an electron beam accelerated by a given accelerating voltage, the objective lens for focusing the electron beam emitted from the beam source onto a specimen, scan coils for scanning the focused beam over the specimen, and the electron detector located above the objective lens and provided with a hole permitting passage of the beam. The detector has an electrode for producing an electric field that attracts the electrons produced from the specimen in response to the electron beam irradiation. Correction coils for correcting deflection of the beam caused by the electric field are located below the detector.
Abstract:
A charged particle beam apparatus includes: a correction image acquisition part 52 for making a detector 20 acquire items of two-dimensional image data at different focal positions; a directional differentiation operation part 53 for obtaining directional derivative values in a plurality of directions for each of the items of two-dimensional image data at different focal positions; an aberration parameter calculation part 54 for obtaining aberration parameters according to previously determined methods by using the directional derivative values in a plurality of directions for each of the items of two-dimensional image data; an aberration correction value calculation part 55 for obtaining correction values for aberrations by using the aberration parameters; and a control part 56 for setting the correction values in a correction optical system control means to make an aberration corrector 16 correct the aberrations.