SEMICONDUCTOR DEVICE IMPLEMENTING PHYSICALLY UNCLONABLE FUNCTION

    公开(公告)号:US20230044357A1

    公开(公告)日:2023-02-09

    申请号:US17736986

    申请日:2022-05-04

    Abstract: An exemplary embodiment of the present disclosure provides a physically unclonable function (PUF) cell capable of exhibiting a stable performance and showing an excellent repeatability while being less affected by environmental factors such as a noise, temperature, and bias voltage. The PUF cell generates an output value by combining a scheme of amplifying a threshold voltage difference and a scheme of amplifying an oscillation frequency difference. In an oscillator that generates oscillation signals of different frequencies, the frequency difference of the oscillation signals is amplified by alternately supplying bias voltages of different magnitudes generated by utilizing the threshold voltage difference to a plurality of stages in the oscillator.

    MULTI-LAYER SELECTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220367809A1

    公开(公告)日:2022-11-17

    申请号:US17623241

    申请日:2021-11-09

    Abstract: The present invention provides a multi-layer selector device exhibiting a low leakage current by controlling a threshold voltage. According to an embodiment of the present invention, the multi-layer selector device comprises: a substrate; a lower electrode layer disposed on the substrate; an insulating layer disposed on the lower electrode layer and having a via hole passing through to expose the lower electrode layer; a switching layer disposed on the lower electrode layer in the via hole, performing a switching operation by forming and destroying a conductive filament, and made of a multi-layer to control the formation of the conductive filament; and an upper electrode layer disposed on the switching layer.

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