公开(公告)号：US06994609B1

公开(公告)日：2006-02-07

申请号：US10744280

申请日：2003-12-22

Applicant: Yehiel Gotkis

Inventor： Yehiel Gotkis

IPC: B24B1/00

CPC classification number: B24B37/042 ,  B24B37/26 ,  B24B41/005

Abstract: A table assembly for use in a wafer preparation module is provided. The table assembly includes a replaceable pad assembly and a permanent pad assembly. The replaceable pad assembly has a removable support element and a pad. A backside of the pad is secured to a front surface of the removable support element. The permanent support element is removeably secured to the replaceable pad assembly. A method for conducting multiple wafer preparation operations in a single processing module, a method for conducting multiple CMP operations in a single module, and a system for preparing a wafer are also provided.

Abstract translation: 提供了一种用于晶片制备模块的台组件。 工作台组件包括可替换的衬垫组件和永久衬垫组件。 可替换的垫组件具有可移除的支撑元件和垫。 垫的背面被固定到可移除支撑元件的前表面。 永久性支撑元件可移除地固定到可更换的垫组件。 还提供了在单个处理模块中进行多个晶片制备操作的方法，在单个模块中进行多个CMP操作的方法，以及用于制备晶片的系统。

公开(公告)号：US06896596B2

公开(公告)日：2005-05-24

申请号：US10420098

申请日：2003-04-21

Applicant: Yehiel Gotkis ,  Aleksander A. Owczarz ,  Rodney Kistler

Inventor： Yehiel Gotkis ,  Aleksander A. Owczarz ,  Rodney Kistler

IPC: B24B21/04 ,  B24B53/007 ,  B24B53/017 ,  B24B1/00

CPC classification number: B24B53/017 ,  B24B21/04

Abstract: An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.

Abstract translation: 提供了一种用于化学机械平面化（CMP）的熨烫组件。 熨烫组件设计用于具有多个凹凸和应用浆料的线性抛光垫。 熨烫组件包括具有接触表面的熨烫盘。 熨烫盘定向在线性抛光垫上，使得熨烫盘的接触表面可以施加在线性抛光垫的表面上，以在平坦化半导体晶片表面之前在线性抛光垫上至少部分地平坦化多个凹凸 。

公开(公告)号：US06894491B2

公开(公告)日：2005-05-17

申请号：US10328884

申请日：2002-12-23

Applicant: Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

Inventor： Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

IPC: H01L21/66 ,  G01B7/06 ,  G01R33/12

CPC classification number: H01L22/26

Abstract: A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

Abstract translation: 提供了一种用于检测晶片层的厚度的方法。 该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。 该方法还包括提供配置成创建一组互补传感器的多个传感器。 该方法还包括沿着晶片载体内的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相位相同角度。 该方法还包括测量由多个传感器产生的信号。 还包括对由多个传感器产生的信号进行平均以产生组合信号。 平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。

公开(公告)号：US06859765B2

公开(公告)日：2005-02-22

申请号：US10318967

申请日：2002-12-13

Applicant: Yehiel Gotkis ,  Vladimir Katz ,  David Hemker ,  Rodney Kistler ,  Nicolas J. Bright

Inventor： Yehiel Gotkis ,  Vladimir Katz ,  David Hemker ,  Rodney Kistler ,  Nicolas J. Bright

IPC: G05B23/02 ,  H01L21/66 ,  H04B15/00

CPC classification number: G05B23/0254 ,  H01L22/26

Abstract: A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

公开(公告)号：US06808590B1

公开(公告)日：2004-10-26

申请号：US10186932

申请日：2002-06-28

Applicant: Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

Inventor： Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

IPC: H01L21302

CPC classification number: G01B7/105 ,  G01B7/107 ,  G01B2210/44

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

Abstract translation: 提供了一种用于处理晶片的系统。 该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。 载体膜固定到底表面并支撑晶片。 嵌入晶片载体的传感器。 传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。 包括CMP工具外部的传感器阵列。 传感器阵列与嵌入在晶片载体中的传感器连通，并且基本上消除了距离灵敏度。 传感器阵列提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器进行校准。 校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。 还提供了一种方法和装置。

公开(公告)号：US06788050B2

公开(公告)日：2004-09-07

申请号：US10328912

申请日：2002-12-23

Applicant: Yehiel Gotkis

Inventor： Yehiel Gotkis

IPC: G01N2772

CPC classification number: G01B7/105

Abstract: A system and method for determining a component of an eddy current sensor (ECS) signal attributable to a substrate includes placing a substrate in a first position relative to an ECS at a first distance from the ECS. A first surface of the substrate can include a conductive film. A first ECS signal can be detected with the substrate in the first position. The substrate can then be inverted relative to the ECS. A second ECS signal is detected with the substrate in the second position. A difference signal is determined. The difference signal is equal to a difference between a first signal level on a calibration graph for the ECS and the second signal level.

Abstract translation: 用于确定归因于衬​​底的涡流传感器（ECS）信号的分量的系统和方法包括将衬底相对于ECS离开ECS的第一距离放置在相对于ECS的第一位置。 基板的第一表面可以包括导电膜。 可以在第一位置的基板上检测第一ECS信号。 然后可以将衬底相对于ECS倒置。 在第二位置中用基板检测第二ECS信号。 确定差分信号。 差分信号等于ECS的校准图上的第一信号电平与第二信号电平之差。

公开(公告)号：US06656024B1

公开(公告)日：2003-12-02

申请号：US10029742

申请日：2001-12-21

Applicant: John M. Boyd ,  David Wei ,  Yehiel Gotkis

Inventor： John M. Boyd ,  David Wei ,  Yehiel Gotkis

IPC: B24B500

CPC classification number: B24B37/32 ,  B24B21/04

Abstract: A retaining ring is provided. The retaining ring includes a lower annular sleeve having a base. The base has an inner sidewall and an outer sidewall extending therefrom. The lower annular sleeve has at least one hole defined therein. An upper annular sleeve is moveably disposed over the lower annular sleeve. The upper annular sleeve has a top, that has at least one hole defined therein. The top has an inner sidewall and an outer sidewall extending therefrom. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

Abstract translation: 提供固定环。 保持环包括具有底座的下环形套筒。 底座具有从其延伸的内侧壁和外侧壁。 下环形套筒具有限定在其中的至少一个孔。 上环形套筒可移动地设置在下环形套筒的上方。 上环形套筒具有顶部，其具有限定在其中的至少一个孔。 顶部具有从其延伸的内侧壁和外侧壁。 还描述了在化学机械平坦化（CMP）操作期间减少压缩干燥空气（CDA）的消耗的方法。

公开(公告)号：US06540587B1

公开(公告)日：2003-04-01

申请号：US09688013

申请日：2000-10-13

Applicant: Yehiel Gotkis ,  Rodney Kistler

Inventor： Yehiel Gotkis ,  Rodney Kistler

IPC: B24B100

CPC classification number: B24B37/013 ,  B24B49/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A chemical mechanical planarization system and methods for implementing infrared detection of process state and substrate surface composition are provided. In one example, the chemical mechanical planarization system includes a substrate chuck to hold and rotate a substrate, a preparation head mounted on a preparation carrier, and a conditioning head mounted on a conditioning carrier. The preparation head is configured to be applied against the substrate, overlapping at least a portion of the substrate of an area smaller than the entire surface area of the substrate. The system further includes an infrared sensor positioned over the substrate to sense infrared emissions from the surface of the substrate. Several examples of infrared sensors are provided including single point, scanning, and array infrared sensors. In another example, a method of determining process state and surface composition of a substrate using infrared sensing is provided. During chemical mechanical planarization, an infrared sensor is positioned to sense infrared emissions from the surface of a substrate, and to analyze the infrared emissions to determine process state and to generate a topographical detail of the substrate.

Abstract translation: 提供化学机械平面化系统和实现工艺状态和衬底表面组成红外检测的方法。 在一个示例中，化学机械平面化系统包括用于保持和旋转基板的基板卡盘，安装在准备载体上的准备头和安装在调节载体上的调节头。 该制备头被配置成施加到衬底上，与基片的整个表面区域的面积的至少一部分衬底重叠。 该系统还包括位于衬底上的红外传感器，以感测来自衬底表面的红外发射。 提供红外传感器的几个例子，包括单点，扫描和阵列红外传感器。 在另一个示例中，提供了使用红外感测确定衬底的工艺状态和表面组成的方法。 在化学机械平面化期间，定位红外传感器以感测来自衬底表面的红外发射，并且分析红外发射以确定过程状态并产生衬底的形貌细节。

公开(公告)号：US06375540B1

公开(公告)日：2002-04-23

申请号：US09608242

申请日：2000-06-30

Applicant: Katrina A. Mikhaylich ,  Mike Ravkin ,  Yehiel Gotkis

Inventor： Katrina A. Mikhaylich ,  Mike Ravkin ,  Yehiel Gotkis

IPC: B24B722

CPC classification number: B24B37/013 ,  B24B21/04 ,  B24B49/14

Abstract: Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.

Abstract translation: 公开了化学机械抛光系统和方法。 该系统包括被配置为从第一点移动到第二点的抛光垫。 还包括载体并构造成将待抛光的基底保持在抛光垫上。 载体被设计成将基底施加到抛光垫在位于第一点和第二点之间的抛光位置。 第一传感器位于第一点并且被定向成感测抛光垫的IN温度，并且第二传感器位于第二点并且定向成感测抛光垫的OUT温度。 IN和OUT温度的感测被配置为产生温度差异，其允许监测处理状态和晶片表面的状态，以便通过化学机械平面化处理晶片来切换工艺步骤。

公开(公告)号：US06328042B1

公开(公告)日：2001-12-11

申请号：US09684473

申请日：2000-10-05

Applicant: Yehiel Gotkis

Inventor： Yehiel Gotkis

IPC: B08B700

CPC classification number: H01L21/67046 ,  B08B7/00 ,  C11D11/0047 ,  H01L21/02074 ,  Y10S134/902

Abstract: In a method for cleaning a surface of a substrate an amount of a solution is applied on a surface of the substrate. After the solution is applied on the surface, crystallization of the solution is initiated to form a liquid-crystal mixture. Once the liquid-crystal mixture is formed, relative motion between the liquid-crystal mixture and the substrate is created to dislodge contaminants adhered to the substrate. In one alternative method, the solution is applied on a pad. In another alternative method, the substrate is place in a bath of the solution. A wafer cleaning module also is described.

Abstract translation: 在清洗基材表面的方法中，将一定量的溶液施加在基材的表面上。 在将溶液施加到表面上之后，开始溶液的结晶以形成液晶混合物。 一旦形成了液晶混合物，就产生了液晶混合物和基片之间的相对运动，以便去除附着在基片上的污染物。 在一种替代方法中，将溶液施加在垫上。 在另一种替代方法中，将基底置于溶液浴中。 还描述了晶片清洁模块。