公开(公告)号：US08969775B2

公开(公告)日：2015-03-03

申请号：US13781388

申请日：2013-02-28

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/00 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140299956A1

公开(公告)日：2014-10-09

申请号：US13856993

申请日：2013-04-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20140239351A1

公开(公告)日：2014-08-28

申请号：US13777197

申请日：2013-02-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁上，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

公开(公告)号：US20140239154A1

公开(公告)日：2014-08-28

申请号：US13781388

申请日：2013-02-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140103410A1

公开(公告)日：2014-04-17

申请号：US13649842

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Zhenhong Fu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14609 ,  H01L27/14616

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散（“FD”）区域和传送装置。 感光元件设置在基板层中，用于响应于光积累图像电荷。 FD区域设置在基板层中以从感光元件接收图像电荷。 转印装置设置在感光元件和FD区之间以选择性地将图像电荷从感光元件转移到FD区域。 转移装置包括栅极，掩埋沟道掺杂区域和表面沟道区域。 栅极设置在感光元件和FD区域之间。 掩埋沟道掺杂区域与FD区域相邻并且位于栅极下方。 表面沟道区域设置在掩埋沟道掺杂区域和感光元件之间并且设置在栅极下方。

公开(公告)号：US20140103189A1

公开(公告)日：2014-04-17

申请号：US13651092

申请日：2012-10-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/148 ,  H01L31/00

CPC classification number: H01L27/14612 ,  H04N5/3559

Abstract: Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system.

Abstract translation: 本发明的实施例描述了提供一种紧凑的解决方案，以通过利用用于将浮动扩散节点复位到参考电压值的控制节点和用于选择性地传输图像电荷的方法来为成像像素提供高动态范围成像（HDRI或简单的HDR） 感光元件到读出节点。 本发明的实施例进一步描述了控制节点必须具有多个不同的电容区域以选择性地增加浮动扩散节点的整体电容。 浮动扩散节点的这种可变电容增加了成像像素的动态范围，从而为主机成像系统提供了HDR，并且提高了成像系统的信噪比（SNR）。

公开(公告)号：US20130285183A1

公开(公告)日：2013-10-31

申请号：US13927495

申请日：2013-06-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

公开(公告)号：US12284839B2

公开(公告)日：2025-04-22

申请号：US17700858

申请日：2022-03-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L31/062 ,  H01L31/113 ,  H10F39/00 ,  H10F39/18

Abstract: Transistors, electronic devices, and methods are provided. Transistors include a gate trench formed in a semiconductor substrate and extending to a gate trench depth, and a source and a drain formed as doped regions in the semiconductor substrate and having a first conductive type. The source and the drain are formed along a channel length direction of the transistor at a first end and a second end of the gate trench, respectively, and the source and the drain each includes a first doped region and a second doped region extending away from the first doped region. The second doped region extends to a depth in the semiconductor substrate deeper than the first doped region relative to a surface of the semiconductor substrate.

公开(公告)号：US12262563B2

公开(公告)日：2025-03-25

申请号：US17701632

申请日：2022-03-22

Applicant: Omnivision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

IPC: H10F39/18

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

公开(公告)号：US11948965B2

公开(公告)日：2024-04-02

申请号：US17220695

申请日：2021-04-01

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L27/148 ,  H01L29/423

CPC classification number: H01L27/14643 ,  H01L27/14683 ,  H01L27/14831 ,  H01L27/14887 ,  H01L29/4236

Abstract: An uneven-trench pixel cell includes a semiconductor substrate that includes a floating diffusion region, a photodiode region, and, between a front surface and a back surface: a first sidewall surface, a shallow bottom surface, a second sidewall surface, and a deep bottom surface. The first sidewall surface and a shallow bottom surface define a shallow trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A shallow depth of the shallow trench exceeds a junction depth of the floating diffusion region. The second sidewall surface and a deep bottom surface define a deep trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A distance between the deep bottom surface and the front surface defines a deep depth, of the deep trench, that exceeds the shallow depth.