公开(公告)号：US20120244034A1

公开(公告)日：2012-09-27

申请号：US13378756

申请日：2009-12-16

Applicant: Yong-Jin Kim ,  Sangsun Yang ,  Tae-Soo Lim

Inventor： Yong-Jin Kim ,  Sangsun Yang ,  Tae-Soo Lim

IPC: B22F9/04 ,  C22C21/04 ,  C22B9/16

CPC classification number: C22C1/1042 ,  B22F2009/0816

Abstract: Disclosed herein are a method and an apparatus for preparing a metal composite powder by using gas spraying. The method of preparing a metal composite powder by using gas spraying includes introducing a matrix phase in a chamber, including a reinforcing phase in the chamber, melting the introduced matrix phase to form a melt, adding the reinforcing phase in the melt, stirring the melt with the added reinforcing phase to form a melt mixture, atomizing the melt mixture together with a gas to form a metal composite powder containing the reinforcing phase, and collecting the metal composite powder formed.

Abstract translation: 本文公开了通过使用气体喷射来制备金属复合粉末的方法和装置。 通过使用气体喷射制备金属复合粉末的方法包括在室中引入基质相，包括在室中的增强相，熔化引入的基质相以形成熔体，将增强相加入熔体中，搅拌熔体 加入增强相以形成熔融混合物，将熔融混合物与气体一起雾化以形成含有增强相的金属复合粉末，并收集所形成的金属复合粉末。

公开(公告)号：US08198769B2

公开(公告)日：2012-06-12

申请号：US12581128

申请日：2009-10-17

Applicant: Hwa Young Oh ,  Jun Kun Choi ,  Yong Jin Kim ,  Kyung Ho Lee ,  Seok Jun Park ,  Je Hyun Bang ,  Kwang Hyung Lee ,  Ki Suk Woo ,  Seung Heon Han ,  Jae Woo Jun

Inventor： Hwa Young Oh ,  Jun Kun Choi ,  Yong Jin Kim ,  Kyung Ho Lee ,  Seok Jun Park ,  Je Hyun Bang ,  Kwang Hyung Lee ,  Ki Suk Woo ,  Seung Heon Han ,  Jae Woo Jun

IPC: H02K35/00

CPC classification number: H02K33/16 ,  B06B1/045

Abstract: The present invention provides a horizontal linear vibrator which can increase vibration strength while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The bracket and the casing form the internal space therein. A coil is provided above the bracket such that the center axis thereof is oriented in a horizontal direction. The vibration unit is disposed through the coil and comprises a magnetic field generating unit and a weight. The magnetic field generating unit includes a magnet assembly and a yoke. The magnet assembly has magnets which are provided on opposite sides of a magnetic body core such that the similar magnetic poles of the magnets face each other. The weight is mounted to the magnetic field generating unit. The springs are coupled to the casing or the bracket and elastically support the vibration unit.

Abstract translation: 本发明提供一种水平线性振动器，其可以增加振动强度，同时保证足够长的寿命和令人满意的响应性。 水平线性振动器包括壳体，支架，振动单元和弹簧。 支架和外壳形成内部空间。 线圈设置在支架上方，使得其中心轴线在水平方向上定向。 振动单元设置在线圈上并包括磁场产生单元和重物。 磁场产生单元包括磁体组件和磁轭。 磁体组件具有设置在磁性体芯的相对侧上的磁体，使得磁体的相似磁极彼此面对。 重量被安装到磁场产生单元。 弹簧联接到壳体或支架并弹性地支撑振动单元。

公开(公告)号：US08138003B2

公开(公告)日：2012-03-20

申请号：US13031425

申请日：2011-02-21

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L21/00

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时，吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US20120055908A1

公开(公告)日：2012-03-08

申请号：US13220084

申请日：2011-08-29

Applicant: Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

Inventor： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC: B23K26/36 ,  B23K26/04

CPC classification number: B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

Abstract translation: 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US20120048638A1

公开(公告)日：2012-03-01

申请号：US13191879

申请日：2011-07-27

Applicant: Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

Inventor： Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

IPC: B60K5/04 ,  B60K5/12

CPC classification number: B60K5/1241 ,  B60K5/04 ,  B60K17/24 ,  B62D21/11

Abstract: A structure of an engine mount is provided for a vehicle in which an engine is disposed in the front of the vehicle, a front wheel is driven, and the engine is integrally coupled with a transmission to be seated horizontally on a vehicle body in a transverse mounting direction. The structure may include a driveshaft coupled to receive the driving force of the engine through the transmission and penetrate a center bearing through a bearing bracket fixed to the engine, a subframe as a plate shape coupled to the vehicle body in a rear lower part of the engine and coupled to a lower part of the transmission through a main roll rod mounted on the front, and a sub-roll rod having one end connected to the subframe and the other end connected to the bearing bracket.

Abstract translation: 发动机支架的结构为发动机设置在车辆的前部而被驱动的车辆提供，并且发动机与变速器一体地联接，以使车身横向放置在横向 安装方向。 该结构可以包括被连接以通过传动装置接收发动机的驱动力的驱动轴，并通过固定在发动机上的轴承架穿过中心轴承，将副车架作为联接到车身的板形在后部的下部 发动机，并且通过安装在前部的主辊杆耦合到变速器的下部;以及副辊杆，其一端连接到副车架，另一端连接到轴承座。

公开(公告)号：US08124497B2

公开(公告)日：2012-02-28

申请号：US12955222

申请日：2010-11-29

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L21/762

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

Abstract translation: 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US20120003824A1

公开(公告)日：2012-01-05

申请号：US13019146

申请日：2011-02-01

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L21/20

CPC classification number: H01L21/302 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract translation: 提供了一种制造氮化镓（GaN）晶片的方法。 在根据实施例的制造GaN晶片的方法中，在衬底上形成蚀刻停止层，并且在蚀刻停止层上形成第一GaN层。 用硅烷气蚀刻第一GaN层的一部分，在蚀刻的第一GaN层上形成第二GaN层。 在第二GaN层上形成第三GaN层。

公开(公告)号：US08054235B2

公开(公告)日：2011-11-08

申请号：US12433180

申请日：2009-04-30

Applicant: Sang-Ha Lee ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

Inventor： Sang-Ha Lee ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

IPC: H01Q7/08

CPC classification number: H01Q7/06 ,  H01Q7/08 ,  H01Q23/00

Abstract: An active magnetic antenna with a ferrite core having a winding is provided, forming a frame magnetic antenna which is connected with a low-noise transistor, to amplify a signal of the frame magnetic antenna. A base of the transistor is connected directly to one contact of the winding, and a second contact of the winding is capable of shifting a voltage of the base of the transistor. The impedance of the frame magnetic antenna is adjusted as a complex conjugate with an impedance of the base of the transistor of the low-noise amplifier, and the winding eliminates its own resonances.

Abstract translation: 提供具有绕组的铁氧体磁芯的有源磁性天线，形成与低噪声晶体管连接的框架磁性天线，以放大帧磁性天线的信号。 晶体管的基极直接连接到绕组的一个触点，并且绕组的第二触点能够移动晶体管的基极的电压。 框架磁性天线的阻抗被调整为与低噪声放大器的晶体管的基极的阻抗的复共轭，并且绕组消除了它自己的谐振。

公开(公告)号：US07999421B2

公开(公告)日：2011-08-16

申请号：US12559461

申请日：2009-09-14

Applicant: Yong Jin Kim ,  Jun Kun Choi ,  Jae Woo Jun ,  Ki Suk Woo ,  Kwang Hyung Lee ,  Je Hyun Bang ,  Seok Jun Park ,  Kyung Ho Lee ,  Hwa Young Oh

Inventor： Yong Jin Kim ,  Jun Kun Choi ,  Jae Woo Jun ,  Ki Suk Woo ,  Kwang Hyung Lee ,  Je Hyun Bang ,  Seok Jun Park ,  Kyung Ho Lee ,  Hwa Young Oh

IPC: H02K35/00

CPC classification number: H02K33/18

Abstract: The present invention provides a horizontal linear vibrator which can reduce the thickness but increase the strength of vibrations while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The casing defines an internal space therein. A first magnet is attached to an upper plate of the casing. The bracket is coupled to the lower end of the casing. The second magnet is attached to the bracket such that different poles of the first and second magnets face each other. The vibration unit has a weight, and a cylindrical coil which is provided in or under the weight. The springs are coupled to the sidewall plates of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction.

Abstract translation: 本发明提供一种水平线性振动器，其可以减小厚度，但是增加振动的强度，同时保证足够长的使用寿命和令人满意的响应性。 水平线性振动器包括壳体，支架，振动单元和弹簧。 壳体在其中限定内部空间。 第一磁体附接到壳体的上板。 支架联接到壳体的下端。 第二磁体附接到支架，使得第一和第二磁体的不同的磁极彼此面对。 振动单元具有重量，并且设置在重物中或其下方的圆柱形线圈。 弹簧联接到壳体或支架的侧壁板。 弹簧弹性地支撑振动单元以允许振动单元在水平方向上振动。

公开(公告)号：US20110140719A1

公开(公告)日：2011-06-16

申请号：US12872574

申请日：2010-08-31

Applicant: HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

Inventor： HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

IPC: G01R27/26

CPC classification number: H01J37/32935 ,  H01J37/32174

Abstract: A method of monitoring a semiconductor process is provided. The method includes preparing a process chamber including first and second electrodes spaced apart from and facing each other, and connecting the first electrode to a ground and connecting the second electrode to a radio frequency power source. An impedance in the process chamber is measured using a voltage value and a current value at the second electrode. The consumption amount of consumables in the process chamber is checked using the impedance. Varied process conditions are adjusted within an initial set range.

Abstract translation: 提供了一种监测半导体工艺的方法。 该方法包括制备包括彼此间隔开并面对彼此的第一和第二电极以及将第一电极连接到地面并将第二电极连接到射频电源的处理室。 使用第二电极处的电压值和电流值来测量处理室中的阻抗。 使用阻抗检查处理室中的消耗品的消耗量。 不同的工艺条件在初始设定范围内进行调整。