Invention Grant
US08138003B2 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches
有权
制造具有平行沟槽的基底衬底的氮化物半导体衬底的方法
- Patent Title: Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches
- Patent Title (中): 制造具有平行沟槽的基底衬底的氮化物半导体衬底的方法
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Application No.: US13031425Application Date: 2011-02-21
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Publication No.: US08138003B2Publication Date: 2012-03-20
- Inventor: Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
- Applicant: Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
- Applicant Address: KR Gumi
- Assignee: Siltron, Inc.
- Current Assignee: Siltron, Inc.
- Current Assignee Address: KR Gumi
- Agency: Greer, Burns & Crain, Ltd.
- Priority: KR10-2006-0129128 20061218
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
Public/Granted literature
- US20110143525A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-06-16
Information query
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