摘要:
A command receiving circuit receives a command signal for determining a circuit operation, in synchronization with a clock signal and it outputs the received command signal as an internal command signal. An address switching circuit permits transmission of an address signal to an internal circuit upon receiving the command signal. The internal circuit receives the address signal before the reception of the command signal, thereby to start its operation. As a result, the internal circuit can be operated at high speed. Besides, the address switching circuit inhibits the transmission of the address signal to the internal circuit upon receiving the internal command signal or the clock signal. Therefore, even when the level of the address signal has changed after the reception of the command signal, the change does not lead to operating the internal circuit. Accordingly, the power consumption of the semiconductor integrated circuit is reduced. Meanwhile, the semiconductor integrated circuit comprises a plurality of memory cores and a bank switch for selecting the memory cores. The bank switch feeds the address signal to predetermined memory core(s) of the memory cores in accordance with the value of the address signal. Since the memory core can receive the address signal before the validation of a command, the circuit operation is performed at high speed even in the semiconductor integrated circuit including the plurality of memory cores are controlled as bank.
摘要:
A memory device, which writes data upon receiving a write command and reads data upon receiving a read command, comprises: a data input/output circuit for inputting and outputting the data in synchronization with first and second edges of a clock; and a cell array including a plurality of memory cells which store the data are. The memory device includes two sets of data bus lines connected to the cell array via column gates, a serial/parallel converter for inputting and outputting first and second write data, and two write amplifiers for driving the two data bus lines in accordance with the first and the second write data from the serial/parallel converter. The write amplifiers are activated in a write enabled state and the write amplifier is deactivated in response to a data mask signal despite being in the write enable state. The memory device has a column decoder which selects the column gate, and is inhibited the activation in response to the data mask signal. Therefore, the write-interrupt-read operation can appropriately be performed for a memory device which is compatible with the double data rate.
摘要:
A data signal is output from an output circuit of a first chip and sent to a data input terminal in the second chip via a data lead line based on an output clock in first chip, which is sent to the second chip. And an input circuit in a second chip receives the data signal and transfers it inside in response to a transfer clock that has been generated from the output clock in the first chip. In synchronism with a single reference clock in the first chip, therefore, a data signal can be transferred to the second chip from the first chip at a high speed.
摘要:
A semiconductor integrated circuit includes an internal clock generating circuit generating an internal clock, and a flip-flop circuit configured so that n latch circuits are cascaded via switch circuits performing switching operations in synchronism with the internal clock where n is an integer equal to or greater than 2. An initialization control circuit is provided so that it applies, after power on, an initialization signal to the flip-flop circuit whereby a first latch circuit among the n latch circuits is initialized. The initialization control circuit causes the internal clock generating circuit to generate the internal clock during a predetermined period so that the second through nth latch circuits are sequentially initialized.
摘要:
A semiconductor device for accepting a data from outside in synchronization with data strobe signal. The semiconductor device includes control circuit for generating an accept-control signal which is activated in response to a write command inputted in synchronization with a clock signal and is inactivated in response to the data strobe signal in synchronization with the final data signal, and data input circuit for accepting the data signals while the accept-control signal is activated. The timing of the accept-control signal varies in accordance with the variation of the timing of the data strobe signal because the control circuit controls so as to inactivate the accept-control signal in response to the data strobe signal. Hence, inactivating of the accept-control signal is always performed within a predetermined time period after the final data signal is accepted in synchronization with the data strobe signal. As a result, the inactivating of the accept-control signal is accurately controlled in synchronization with the data strobe signal. Therefore, only necessary write-data are reliably accepted even if the timing of the data strobe signal varies.
摘要:
A semiconductor integrated circuit is adapted to make invalid an external clock, externally supplied to the semiconductor integrated circuit, when the semiconductor integrated circuit is set in an active power-down state. The semiconductor integrated circuit includes a delay locked loop DLL circuit which outputs an internal clock which phase is synchronized to the external clock. A latch circuit retains control signals in synchronism with the internal clock output by the DLL circuit. An internal circuit performs a predetermined process based on the control signals supplied from the latch circuit.
摘要:
First and second data output circuits obtain corresponding parts of read data of a storage circuit to output to first and second input/output pads in a second test mode. First and second data input circuits obtain output data of the first and second data output circuits via the first and second input/output pads to output in the second test mode. A comparison object selection circuit selects output data of the first and second data input circuits to output in the second test mode. A judging circuit performs a test judgment by comparing output data of the comparison object selection circuit with expected value data and outputs a test result signal in the second test mode.
摘要:
A semiconductor memory device that includes an input buffer being inputted a write data from outside to buffer the write data and a control circuit putting the input buffer into an inactive state during a read operation and putting the input buffer into an active state when a read mask signal is inputted thereafter is provided.
摘要:
A semiconductor memory device includes a timing signal circuit to generate a refresh timing signal comprised of a series of pulses, a refresh address circuit to generate a refresh address in synchronization with each pulse of the refresh timing signal, a pulse selecting circuit to assert a refresh request signal in synchronization with pulses selected from the series of pulses, and a memory core to receive the refresh address and the refresh request signal and to perform a refresh operation with respect to the refresh address in response to assertion of the refresh request signal, wherein arrangement is made to switch between a first operation mode in which the selected pulses are obtained by selecting one pulse out of every predetermined number of pulses from the series of pulses and a second operation mode in which the selected pulses are obtained by selecting consecutive pulses from the series of pulses.
摘要:
First and second data output circuits obtain corresponding parts of read data of a storage circuit to output to first and second input/output pads in a second test mode. First and second data input circuits obtain output data of the first and second data output circuits via the first and second input/output pads to output in the second test mode. A comparison object selection circuit selects output data of the first and second data input circuits to output in the second test mode. A judging circuit performs a test judgment by comparing output data of the comparison object selection circuit with expected value data and outputs a test result signal in the second test mode.