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公开(公告)号：USD383469S
公开(公告)日：1997-09-09
申请号：US47085
申请日：1995-11-21
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公开(公告)号：US4984466A
公开(公告)日：1991-01-15
申请号：US531428
申请日：1990-05-31
申请人： Katsuaki Yasui , Yasuo Tada , Akira Takashima
发明人： Katsuaki Yasui , Yasuo Tada , Akira Takashima
CPC分类号： G01L19/0084 , G01L19/147 , Y10T29/49103
摘要： A semiconductor pressure sensor comprising two pressure sensing diaphragms attached to a support frame embedded within a bonding agent joining two parts of a housing which defines therein fluid passages in communication with two pressure sensing diaphragms. The support frame includes a support plate portion and terminal portions having the inner ends embedded within the bonding agent and the outer ends projecting outwardly of the bonding agent for external connections. The support frame is formed by cutting a lead frame, which has a support frame portion, terminal portions and a surrounding frame integrally connected together, substantially along the outer contour of the housing except for the terminals. A method for manufacturing the pressure sensor is also disclosed.
摘要翻译： 一种半导体压力传感器，包括两个压力感测膜片，其附接到嵌入在粘合剂中的支撑框架，所述粘合剂接合壳体的两部分，其中限定了与两个压力感测膜片连通的流体通道。 支撑框架包括支撑板部分和端部部分，其端部嵌入粘合剂中，而外端部从用于外部连接的粘合剂向外突出。 支撑框架通过切割引线框架而形成，引线框架具有支撑框架部分，终端部分和围绕框架整体地连接在一起的引导框架，其基本上沿着外壳的外部轮廓除了端子之外。 还公开了一种用于制造压力传感器的方法。
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公开(公告)号：US4961371A
公开(公告)日：1990-10-09
申请号：US267607
申请日：1988-11-07
申请人： Akira Takashima
发明人： Akira Takashima
CPC分类号： E02F9/2239 , E02F9/2292 , F15B11/17 , F15B2211/20538 , F15B2211/20576 , F15B2211/3051 , F15B2211/3116 , F15B2211/7135 , F15B2211/7142
摘要： A hydraulic circuit for a backhoe comprising a first multiple valve, a second multiple valve, and a confluence mechanism mounted between the first and second multiple valves. The first multiple valve includes control valves connected to a first pump in parallel to one another for driving working implements. The second multiple valve includes further control valves connected to a second pump in parallel to one another for driving other working implements. The confluence mechanism is connected to a rear end of a center bypass line of the first multiple valve and to a rear end of a center bypass line of the second multiple valve. Further, the confluence mechanism, in neutral position, is connected to a return oil line for confluently returning oil from the first and second multiple valves to a tank.
摘要翻译： 一种用于反铲的液压回路，包括安装在第一和第二多个阀之间的第一多重阀，第二多个阀和汇合机构。 第一多个阀包括彼此并联连接到第一泵的控制阀，用于驱动作业工具。 第二多个阀包括彼此并联连接到第二泵的另外的控制阀，用于驱动其他工作工具。 汇合机构连接到第一多个阀的中心旁通管线的后端并连接到第二多个阀的中心旁通管线的后端。 此外，在中立位置的汇合机构连接到返回油管线，用于将油从第一和第二多个阀汇合到油箱。
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公开(公告)号：USD309313S
公开(公告)日：1990-07-17
申请号：US187996
申请日：1988-04-29
申请人： Akira Takashima , Shizuo Shimoie , Hisato Katoh
设计人： Akira Takashima , Shizuo Shimoie , Hisato Katoh
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公开(公告)号：US4695893A
公开(公告)日：1987-09-22
申请号：US786959
申请日：1985-10-04
CPC分类号： H04N5/23212
摘要： In an automatic focusing apparatus which detects sharpness signals from high-frequency components of brightness signals contained in video signals from video cameras and which stops a focusing lens of the video camera at a position at which its peak value is obtained, the movement of the focusing lens is started by detecting received light signal levels by performing projection-reception operations with a specified amount of infrared light and detecting their variations with a received light signal level detector or with a micro-computer. Furthermore, depending upon the focal depth of the focusing lens, priority is given to processing of distance information based on sharpness signals or distance information determined by the infrared light projection-reception operation in the lens driving controller for performing the focusing operation. According to the automatic focusing apparatus of the present invention, movement of the lens only due to variations of contrasts can be avoided, and stable image pictures are thus obtainable. Also, the most suitable focusing operation mode for a particular focal depth of a lens in use can be selected.
摘要翻译： PCT No.PCT / JP85 / 00072 Sec。 371日期1985年10月4日第 （e）1985年10月4日的PCT日期1985年2月20日PCT。自动对焦装置，其从摄像机的视频信号中包含的亮度信号的高频分量检测锐度信号，并且停止 摄像机在获得其峰值的位置处，通过利用指定量的红外光进行投影接收操作来检测接收到的光信号电平，开始聚焦透镜的移动，并且以接收的光信号电平检测它们的变化 检测器或微型计算机。 此外，根据聚焦透镜的焦深，优先考虑基于由用于进行聚焦操作的透镜驱动控制器中的红外光投射接收操作确定的清晰度信号或距离信息的距离信息的处理。 根据本发明的自动聚焦装置，可以避免仅由于对比度的变化而导致的透镜的移动，从而可以获得稳定的图像图像。 此外，可以选择用于所使用的透镜的特定焦深的最合适的聚焦操作模式。
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公开(公告)号：US20160045948A1
公开(公告)日：2016-02-18
申请号：US14783210
申请日：2013-04-08
申请人： Masatake SHIMIZU , Akira TAKASHIMA
发明人： Masatake SHIMIZU , Akira TAKASHIMA
IPC分类号： B21D53/14
摘要： In order to restrain the length of an endless metal ring from dispersing, a method of manufacturing a CVT belt has a first-stage stretching step of extending a circumferential length of an endless metal belt by widening distances among rollers. The method includes a measuring step of measuring a spring-back amount of the endless metal belt in the first-stage stretching step. The method includes a calculating step of calculating a predicted spring-back amount that is predicted from the measured spring-back amount. The method also includes a second-stage stretching step of stretching the endless metal belt to process the endless metal belt into a predetermined circumferential length by further widening the distances among the rollers based on the predicted spring-back amount.
摘要翻译： 为了限制环形金属环的长度分散，制造CVT带的方法具有通过扩大辊之间的距离来延伸环形金属带的圆周长度的第一阶段拉伸步骤。 该方法包括在第一阶段拉伸步骤中测量环形金属带的回弹量的测量步骤。 该方法包括：计算步骤，根据测得的回弹量计算预测的弹回量。 该方法还包括第二阶段拉伸步骤，其通过基于预测的回弹量进一步加宽辊之间的距离来拉伸环形金属带以将环形金属带加工成预定的周长。
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公开(公告)号：US08992744B2
公开(公告)日：2015-03-31
申请号：US13192687
申请日：2011-07-28
申请人： Tsunehiro Ino , Akira Takashima
发明人： Tsunehiro Ino , Akira Takashima
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译： 公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。 首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。 然后，将基板输送并加载到真空室中。 接下来，将选择的溅射气体引入该室。 此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。 该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。
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公开(公告)号：US08569823B2
公开(公告)日：2013-10-29
申请号：US13235970
申请日：2011-09-19
申请人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
发明人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11568 , H01L29/517 , H01L29/66833 , H01L29/792
摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。
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公开(公告)号：US08482053B2
公开(公告)日：2013-07-09
申请号：US13204412
申请日：2011-08-05
申请人： Akira Takashima , Masao Shingu , Koichi Muraoka
发明人： Akira Takashima , Masao Shingu , Koichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L21/02145 , H01L21/02156 , H01L21/02161 , H01L21/28273 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/513
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a source region and a drain region provided on a surface area of a semiconductor region, a tunnel insulating film provided on a channel between the source region and the drain region, a charge storage layer provided on the tunnel insulating film, a first dielectric film provided on the charge storage layer and containing lanthanum aluminum silicon oxide or oxynitride, a second dielectric film provided on the first dielectric film and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and a rare earth metal, and a control gate electrode provided on the second dielectric film.
摘要翻译： 根据一个实施例，非易失性半导体存储器件包括设置在半导体区域的表面区域上的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道上的隧道绝缘膜，设置有电荷存储层 在隧道绝缘膜上，设置在电荷存储层上并含有镧铝氧化物或氧氮化物的第一电介质膜，设置在第一电介质膜上并含有氧化物或氮氧化物的第二电介质膜，其含有铪（Hf）， 锆（Zr），钛（Ti）和稀土金属，以及设置在第二电介质膜上的控制栅电极。
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公开(公告)号：US08193577B2
公开(公告)日：2012-06-05
申请号：US12506588
申请日：2009-07-21
申请人： Akira Takashima , Masao Shingu , Naoki Yasuda , Koichi Muraoka
发明人： Akira Takashima , Masao Shingu , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/513 , H01L27/11568 , H01L29/4234 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.
摘要翻译： 非易失性半导体存储器件包括在半导体衬底中彼此分开设置的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道区域上的第一绝缘膜，设置在第一绝缘体上的电荷存储层 膜，设置在电荷存储层上并包括硅酸铝镧硅酸盐膜和由氧化硅或氮氧化硅制成的电介质膜的叠层结构的第二绝缘膜和设置在第二绝缘膜上的控制栅电极。
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