Abstract:
In a method and a device for testing a test substrate under defined thermal conditions, a substrate that is to be tested is held by a temperature-controllable chuck and is set to a defined temperature; the test substrate is positioned relative to test probes by at least one positioning device; and the test probes make contact with the test substrate for testing purposes. At least one component of the positioning device that is present in the vicinity of the temperature-controlled test substrate is set to a temperature that is independent of the temperature of the test substrate by a temperature-controlling device, and this temperature is held constant.
Abstract:
A temperature sensing circuit activates a sensing signal when sensing that a temperature inside a semiconductor integrated circuit is lower than a predetermined temperature. A heat generation control circuit activates a heat generation control signal when the sensing signal is activated. When the heat generation control signal is activated, a current is generated inside a memory circuit to raise the temperature inside the semiconductor integrated circuit.
Abstract:
An abnormality detecting apparatus includes an imaging device for obtaining image data of a TIM, a failure detecting section for detecting appearance failures of the TIM on the basis of the image data of the TIM obtained by the imaging device, and a determining device for determining whether an abnormality occurs at the TIM on the basis of a detection result by the failure detecting section.
Abstract:
Systems and methods including testing of electronic components are described. One system relates to a system including a thermal control unit adapted to control the temperature of at least a portion of an electronic component during testing. The system includes at least one conduit extending through a portion of the thermal control unit, the conduit sized to permit the flow of a thermal interface material therethrough, the thermal interface material comprising a liquid. The at least one conduit is positioned so that the thermal interface material can be delivered through the conduit and onto the electronic component. The system also includes a device adapted to control the flow of the thermal interface material through the conduit, wherein the flow can be controlled to deliver the thermal interface material to the electronic component and to remove the thermal interface material from the electronic component. Other embodiments are described and claimed.
Abstract:
A chuck for testing an integrated circuit includes an upper conductive layer having a lower surface and an upper surface suitable to support a device under test. An upper insulating layer has an upper surface at least in partial face-to-face contact with the lower surface of the upper conductive layer, and a lower surface. A middle conductive layer has an upper surface at least in partial face-to-face contact with the lower surface of the upper insulating layer, and a lower surface.
Abstract:
An environmental test apparatus is disclosed. The environmental test apparatus is configured to simulate the environmental variation in temperature and humidity. The environmental test apparatus comprises a box, a plurality of openings, a plurality of fans, two guiding elements and a plurality of controllers. The box has a plurality of sidewalls and a plurality of corners each being defined by three of the adjacent sidewalls, wherein the openings are disposed on at least two sidewalls of the box, and each of the fans is correspondingly disposed in each of the openings. The two guiding elements are disposed on two opposite corners for guiding the airflow in the hollow box, wherein the two opposite corners share a single sidewall. The controllers are configured to control the rotational speed of each fan and adapted to uniform the distribution of the temperature and the humidity inside the box.
Abstract:
An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference MOSFET measured before applying stress to the semiconductor device and while the semiconductor device is under stress.
Abstract:
A thermal control unit with a heat pipe that conducts heat away from a device under test during burn-in. The heat pipe has a heater that allows control of the rate at which heat is transferred from the DUT to the heat pipe. A sensor and controller are provided to control the heat in response to the measured temperature of the DUT. The sensor and controller control the heater to maintain the surface temperature of the DUT within a specified range.
Abstract:
Provided is a test apparatus for testing a plurality of devices under test formed on a semiconductor wafer, including: a probe card to be connected to respective contacts of the plurality of the devices under test on a connection surface to be overlapped on the semiconductor wafer, the probe card being provided with a plurality of corresponding contacts on a rear surface of the connection surface; and a test head that tests the plurality of devices under test on the semiconductor wafer by sequentially connecting to each part of the plurality of contacts of the probe card.
Abstract:
A plunger for holding and moving electrical components in particular IC's to and from a contacting device connected to a test bed, comprises a head piece with a fluid distribution chamber through which temperature-controlled fluid flows. A suction head is arranged such that the temperature-controlled fluid flows around the suction head and is diverted along the suction head to the component.