公开(公告)号：US06764218B2

公开(公告)日：2004-07-20

申请号：US09993052

申请日：2001-11-06

申请人： Hisanobu Kanamaru ,  Takao Ito ,  Hiromichi Fujimori

发明人： Hisanobu Kanamaru ,  Takao Ito ,  Hiromichi Fujimori

IPC分类号： F16C2902

CPC分类号： F16C29/001 ,  B30B15/041

摘要： A slide guide device for a press guides a slide in a cycle. The slide guide device eliminates eccentric force misalignment and prevents eccentric contact between the slide and a gib. The slide includes at least a first spherical shoe having at least a first guide surface. The gib includes at least a first sliding surface opposite the first guide surface. During operation, the spherical shoe rotates relative to the slide to provide automatic planar alignment between the first guide surface and the sliding surface. A wedge supports the gib to allow rapid and easy alignment with the slide.

摘要翻译： 用于压力机的滑动引导装置引导滑块循环。 滑动引导装置消除了偏心力的不对准，并且防止了滑块和一个三重臂之间的偏心接触。 滑块包括至少第一球形鞋，其具有至少第一引导表面。 该双极体至少包括与第一引导表面相对的第一滑动表面。 在操作期间，球形鞋相对于滑块旋转以在第一引导表面和滑动表面之间提供自动平面对准。 一个楔子支撑gib，以允许快速和容易地与滑块对准。

公开(公告)号：US06707104B2

公开(公告)日：2004-03-16

申请号：US10277744

申请日：2002-10-23

申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

IPC分类号： H01L2978

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

摘要翻译： 横向高击穿电压晶体管包括彼此分离的在p型硅衬底中形成的n +漏极区域和n +源极区域，形成在与衬底绝缘的沟道上的栅极电极 ，形成在漏极区域中的n +漏极接触区域，经由漏极接触区域与漏极区域电连接的漏极布线，与源极区域形成的ap +衬底接触区域，以及与源极区域电连接的源极布线 并且还经由衬底接触区域连接到半导体层。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

公开(公告)号：US06527569B2

公开(公告)日：2003-03-04

申请号：US09911665

申请日：2001-07-24

申请人： Takao Kodama ,  Takao Ito ,  Shinichi Maezono ,  Masahiro Mogi

发明人： Takao Kodama ,  Takao Ito ,  Shinichi Maezono ,  Masahiro Mogi

IPC分类号： H01R1362

CPC分类号： G06K13/0806 ,  G06K13/08

摘要： Disclosed is a low-profile card connector comprising a U-shaped housing; terminals mounted in the housing; and a card ejector comprising a rotary lever and an ejection rod for turning the rotary lever. The rotary lever comprises front and rear sections. The front section is contiguous with the rear section, and is in a plane lower and parallel to the rear section. The front section is rotatably fixed to the main body, and is covered by a cover member, which is assembled to the main body and the overlying front section of the rotary lever to be coplanar with the rear section of the rotary lever.

公开(公告)号：US06524092B1

公开(公告)日：2003-02-25

申请号：US09544848

申请日：2000-04-06

申请人： Takao Ito ,  Hisanobu Kanamaru

发明人： Takao Ito ,  Hisanobu Kanamaru

IPC分类号： B29C4332

CPC分类号： F16C29/001 ,  B30B15/041 ,  B30B15/32 ,  F16C29/02

摘要： A middle liner of a slide guide device for a machine press has a spherical shaped side which fits into a sliding gib attached to a slide. The middle liner slides along a fixed gib at first and second linear surfaces that are at an angle with each other. The combination of self-alignment and smooth movement of the slide is achieved in the presence of an eccentric load acting on the slide. A machine press equipped with such a slide guide device has excellent eccentric load resistance and high working precision. In a further embodiment, a press machine is further equipped with a knockout device having knockout block moving between a pair of guide rails. A plurality of middle liners, each having at least one spherical surface, are positioned between the knockout block and the guide rails. The resulting knockout device provides a stable knockout load with low noise and low energy consumption.

公开(公告)号：US06409479B1

公开(公告)日：2002-06-25

申请号：US09704447

申请日：2000-11-02

申请人： Takao Ito ,  Hisanobu Kanamaru

发明人： Takao Ito ,  Hisanobu Kanamaru

IPC分类号： F04B900

CPC分类号： F04B1/128 ,  F04B1/328 ,  F04B9/02 ,  F04B49/002

摘要： A variable displacement piston pump/motor has a simple, compact structure that is suited for use as an oil-pressure generating device for machine presses and the like. In the variable displacement piston pump/motor, a flywheel and a rotation shaft of a pump device are disposed and connected concentrically.

摘要翻译： 可变排量活塞泵/电动机具有简单紧凑的结构，适合用作机械压力机等的油压发生装置。 在可变排量活塞泵/电动机中，同轴地设置并连接泵装置的飞轮和旋转轴。

公开(公告)号：US5759887A

公开(公告)日：1998-06-02

申请号：US867897

申请日：1997-06-03

申请人： Takao Ito ,  Masayuki Ayabe

发明人： Takao Ito ,  Masayuki Ayabe

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06

CPC分类号： H01L21/8234 ,  H01L27/0629

摘要： A method of manufacturing a semiconductor integrated circuit (IC) includes the steps of forming a polycrystalline silicon layer containing impurities on a semiconductor substrate; forming an oxidation-resistant insulating layer on the polycrystalline silicon layer; simultaneously forming resist patterns for forming a capacitor element and a resistor element on the oxidation-resistant insulating layer; and patterning the oxidation-resistant insulating layer and the polycrystalline silicon layer in sequence using resist patterns.

摘要翻译： 一种制造半导体集成电路（IC）的方法包括以下步骤：在半导体衬底上形成含有杂质的多晶硅层; 在所述多晶硅层上形成抗氧化绝缘层; 同时在抗氧化绝缘层上形成用于形成电容器元件和电阻元件的抗蚀剂图案; 并使用抗蚀剂图案依次图案化耐氧化绝缘层和多晶硅层。

公开(公告)号：US5128667A

公开(公告)日：1992-07-07

申请号：US701237

申请日：1991-05-16

申请人： Masahiro Enomoto ,  Takao Ito ,  Takeshi Nakanishi

发明人： Masahiro Enomoto ,  Takao Ito ,  Takeshi Nakanishi

IPC分类号： H04Q9/00 ,  G08C17/00 ,  G08C19/28 ,  H03J9/06 ,  H04Q9/14

CPC分类号： G08C19/28 ,  G08C17/00 ,  H03J9/06 ,  G08C2201/92

摘要： An improved wireless remote controller for controlling each of several devices under control in each mode of operation without requiring any switching among devices under control and thus having no device switching key mounted thereon. The wireless remote controller has a plurality of operation selection keys and is designed to operate in such manner that when the controller is directed toward one of the devices under control and any one of the operation mode selection keys is depressed, a corresponding operation mode signal is generated and transmitted to a device under control. The operation mode signal includes a series of consecutive signal components for operating all the devices under control. The device under control responds only to the associated one of the signal components of the operation mode signal.

公开(公告)号：US4810668A

公开(公告)日：1989-03-07

申请号：US72446

申请日：1987-07-13

申请人： Takao Ito

发明人： Takao Ito

IPC分类号： H01L21/76 ,  H01L21/31 ,  H01L21/316 ,  H01L21/762 ,  H01L21/473

CPC分类号： H01L21/76227

摘要： A method of manufacturing a semiconductor apparatus is disclosed, in which in the method of isolating elements, is improved. A groove is cut in a semiconductor substrate. Elements are isolated from each other by embedding an insulating material in the groove, in two divided portions. The time required for depositing an insulating material is reduced, thereby forming a uniform insulation layer on the semiconductor substrate. Since the insulating material can be etched in a shorter period of time than was previously required, the etching process can be more finely controlled. Since a field oxide layer is formed by oxidizing an insulation layer formed for the first time, the field oxide layer can be provided without oxidizing those portions of the semiconductor substrate which lie near the groove. Consequently, the seminconductor substrate can be free from crystalline defects.

摘要翻译： 公开了一种制造半导体装置的方法，其中在隔离元件的方法中得到改善。 在半导体衬底中切割凹槽。 通过将绝缘材料嵌入凹槽中，以两个分开的方式将元件彼此隔离。 沉积绝缘材料所需的时间减少，从而在半导体衬底上形成均匀的绝缘层。 由于可以在比以前更短的时间段内蚀刻绝缘材料，所以可以更精细地控制蚀刻工艺。 由于通过氧化第一次形成的绝缘层来形成场氧化物层，所以可以提供场氧化物层而不氧化位于槽附近的半导体衬底的那些部分。 因此，半导体基底可以没有结晶缺陷。