公开(公告)号：US10978657B2

公开(公告)日：2021-04-13

申请号：US16549430

申请日：2019-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US10961446B2

公开(公告)日：2021-03-30

申请号：US16297965

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Jaejun Chang ,  Oul Cho ,  Tae Hyung Kim ,  Sang Jin Lee ,  Eun Joo Jang ,  Young-soo Jeong ,  Moon Gyu Han

IPC: H01L51/50 ,  C09K11/02 ,  C09K11/88 ,  H01L27/32 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.

公开(公告)号：US10811016B2

公开(公告)日：2020-10-20

申请号：US15882698

申请日：2018-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Jung Choi ,  So Yeon Kim ,  Tae Hyung Kim

IPC: G10L15/00 ,  G10L17/22 ,  G06F21/62 ,  H04M1/725 ,  G06F21/32 ,  H04M1/67

Abstract: A method of controlling a terminal is provided. The method includes analyzing a sensed voice when a voice is sensed, recognizing a context based a result of the analysis, and performing a predetermined control operation based on the recognized context.

公开(公告)号：US10673004B2

公开(公告)日：2020-06-02

申请号：US16297833

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Yong Wook Kim ,  Yuho Won ,  Oul Cho

IPC: C09K11/88 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32 ,  C09K11/02 ,  H05B33/14

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

公开(公告)号：US09886997B2

公开(公告)日：2018-02-06

申请号：US15467230

申请日：2017-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Sang Yeop Baeck ,  Jae Young Kim ,  Jin Sung Kim

IPC: G11C11/413 ,  G11C7/12 ,  G11C8/10 ,  G11C5/06 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/11

CPC classification number: G11C11/413 ,  G11C5/063 ,  G11C5/14 ,  G11C7/065 ,  G11C7/12 ,  G11C8/10 ,  G11C11/417 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1104 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device for reducing an instantaneous voltage drop is provided. The semiconductor device includes a first power line configured to provide a first power supply voltage and a first power transistor connected between the first power line and a first logic transistor. The first power transistor includes a first source or drain connected to the first power line, a gate receiving a power gating control signal, and a second source or drain connected to a first source or drain of the first logic transistor using a shared semiconductor junction.

公开(公告)号：US20150199969A1

公开(公告)日：2015-07-16

申请号：US14405083

申请日：2013-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Jung Choi ,  So Yeon Kim ,  Tae Hyung Kim

IPC: G10L17/22

CPC classification number: G10L17/22 ,  G06F21/32 ,  G06F21/629 ,  H04M1/67 ,  H04M1/72569 ,  H04M1/72577 ,  H04M2250/74

Abstract: A method of controlling a terminal is provided. The method includes analyzing a sensed voice when a voice is sensed, recognizing a context based a result of the analysis, and performing a predetermined control operation based on the recognized context.

Abstract translation: 提供一种控制终端的方法。 该方法包括当感测到语音时分析感测到的语音，基于分析的结果识别上下文，以及基于所识别的上下文来执行预定的控制操作。

公开(公告)号：US09048343B2

公开(公告)日：2015-06-02

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Gi Bum Kim ,  Yu Seung Kim ,  Seung Woo Choi ,  Gyeong Seon Park ,  Shi Young Lee

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

公开(公告)号：US12213333B2

公开(公告)日：2025-01-28

申请号：US18498727

申请日：2023-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Kwanghee Kim ,  Eun Joo Jang ,  Won Sik Yoon ,  Tae Hyung Kim ,  Tae Ho Kim

IPC: H10K50/16 ,  H10K50/115 ,  H10K71/00 ,  H10K85/60 ,  H10K102/00

Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

公开(公告)号：US11981851B2

公开(公告)日：2024-05-14

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/74 ,  C01P2004/30 ,  C01P2004/64 ,  C01P2004/80

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11884858B2

公开(公告)日：2024-01-30

申请号：US17308344

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Tae Hyung Kim ,  Hongkyu Seo ,  Won Sik Yoon ,  Jaeyong Lee ,  Eun Joo Jang ,  Oul Cho

IPC: C09K11/88 ,  C09K11/70 ,  B82Y40/00 ,  B82Y30/00 ,  B82Y20/00 ,  H10K50/16 ,  H10K50/18 ,  H10K50/115 ,  H10K50/17

CPC classification number: C09K11/883 ,  C09K11/703 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K50/16 ,  H10K50/171 ,  H10K50/18

Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.