公开(公告)号：US20200074284A1

公开(公告)日：2020-03-05

申请号：US16274547

申请日：2019-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungho KIM ,  Cheheung KIM ,  Jaeho LEE

IPC: G06N3/063 ,  G06F7/50 ,  G06F7/523

Abstract: A 2D array-based neuromorphic processor includes: axon circuits each being configured to receive a first input corresponding to one bit from among bits indicating n-bit activation; first direction lines extending in a first direction from the axon circuits; second direction lines intersecting the first direction lines; synapse circuits disposed at intersections of the first direction lines and the second direction lines, and each being configured to store a second input corresponding to one bit from among bits indicating an m-bit weight and to output operation values of the first input and the second input; and neuron circuits connected to the second direction lines, each of the neuron circuits being configured to receive an operation value output from at least one of the synapse circuits, based on time information assigned individually to the synapse circuits, and to perform a multi-bit operation by using the operation values and the time information.

公开(公告)号：US20200045252A1

公开(公告)日：2020-02-06

申请号：US16362123

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-bum CHOI ,  Hyunyup KWAK ,  Jaeho LEE ,  Ildo KIM ,  Seongwook SONG

IPC: H04N5/357

Abstract: An image signal processor that generates a display signal receives an input image signal having a first pedestal level from an image sensor, generates a first signal from the input image signal, the first signal including a second pedestal level, the second pedestal level being different from the first pedestal level and being determined in accordance with the first pedestal level and a processing gain of the image signal processor, generates a second signal having the second pedestal level by amplifying the first signal in accordance with the processing gain, generates a third signal having the second pedestal level by removing a noise signal from the second signal; and generates a fourth signal by subtracting the second pedestal level from the third signal.

公开(公告)号：US20170243913A1

公开(公告)日：2017-08-24

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jinseong HEO ,  Seongjun PARK

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/032

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/032 ,  H01L31/035227 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US20150364589A1

公开(公告)日：2015-12-17

申请号：US14533802

申请日：2014-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/1606 ,  H01L21/187 ,  H01L21/28512 ,  H01L23/485 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/456 ,  H01L29/7781 ,  H01L29/7839 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a graphene-metal bonding structure, a method of manufacturing the graphene-metal bonding structure, and a semiconductor device including the graphene-metal bonding structure. According to example embodiments, a graphene-metal bonding structure includes: a graphene layer; a metal layer on the graphene layer; and an intermediate material layer between the graphene layer and the metal layer. The intermediate material layer forms an edge-contact with the metal layer from boundary portions of a material contained in the intermediate material layer that contact the metal layer.

Abstract translation: 提供了石墨烯 - 金属结合结构，石墨烯 - 金属结合结构的制造方法以及包括石墨烯 - 金属结合结构的半导体器件。 根据示例性实施例，石墨烯 - 金属结合结构包括：石墨烯层; 石墨烯层上的金属层; 以及石墨烯层和金属层之间的中间材料层。 中间材料层与包含在与金属层接触的中间材料层中的材料的边界部分与金属层形成边缘接触。

公开(公告)号：US20150127681A1

公开(公告)日：2015-05-07

申请号：US14458943

申请日：2014-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangwoo LEE ,  Songgeun KIM ,  Jaeho LEE ,  Hyesoon JEONG

IPC: G06F17/30 ,  G06F3/0488

CPC classification number: G06F3/0488 ,  G06F3/04883

Abstract: A search and display method of an electronic device using handwriting is provided. The search and display method includes recognizing the handwriting, determining whether the recognized handwriting is a gesture or text, recognizing the gesture if it is determined that the recognized handwriting is the gesture, and registering gesture information about the gesture and function information about a function corresponding to the gesture information based on the recognized gesture.

Abstract translation: 提供了使用笔迹的电子设备的搜索和显示方法。 搜索和显示方法包括识别手写，确定所识别的手写是手势还是文本，如果确定所识别的手写是手势，则识别手势，以及登记关于手势的手势信息和关于对应的功能的功能信息 基于所识别的手势的姿势信息。

公开(公告)号：US20150122315A1

公开(公告)日：2015-05-07

申请号：US14508378

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Seongjun PARK ,  Jaeho LEE ,  Jinseong HEO

IPC: H01L29/06 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L29/737 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/74 ,  H01L29/792 ,  C01B19/04 ,  C01G41/00 ,  C01G39/06 ,  C01G25/00 ,  C01G27/00 ,  H01L29/24

CPC classification number: H01L29/0665 ,  C01B19/04 ,  C01G25/00 ,  C01G27/00 ,  C01G39/06 ,  C01G41/00 ,  C01P2004/20 ,  C01P2006/40 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/66977 ,  H01L29/73 ,  H01L29/7317 ,  H01L29/737 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/792 ,  H01L29/861 ,  H01L29/8611 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/035281 ,  H01L31/109 ,  Y10T428/24802

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract translation: 根据示例实施例，二维（2D）材料元件可以包括彼此化学键合的第一2D材料和第二2D材料。 第一2D材料可以包括基于硫族化物的第一金属材料。 第二2D材料可以包括第二金属硫族化物基材料。 第二2D材料可以结合到第一2D材料的一侧。 2D材料元件可以具有PN结结构。 2D材料元件可以包括具有不同带隙的多个2D材料。