公开(公告)号：US10687003B2

公开(公告)日：2020-06-16

申请号：US15228874

申请日：2016-08-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Keiji Mabuchi ,  Dyson H. Tai ,  Oray Orkun Cellek ,  Duli Mao ,  Sohei Manabe

IPC: H04N5/355 ,  H04N5/369 ,  H01L27/146 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/378

Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.

公开(公告)号：US10684373B2

公开(公告)日：2020-06-16

申请号：US15972409

申请日：2018-05-07

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  G01S17/89 ,  G01S7/4863 ,  H04N13/254

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US10582178B2

公开(公告)日：2020-03-03

申请号：US15341374

申请日：2016-11-02

Applicant: OmniVision Technologies, Inc.

Inventor： Zheng Yang ,  Eiichi Funatsu ,  Sohei Manabe ,  Keiji Mabuchi ,  Dajiang Yang ,  Duli Mao ,  Bowei Zhang

IPC: H04N13/00 ,  H04N13/106 ,  H01L27/146 ,  H04N5/3745 ,  H04N13/271 ,  G06T7/586 ,  G06T7/593 ,  G01B11/24 ,  H04N13/254 ,  G06T5/00 ,  G06T5/50 ,  H04N5/353 ,  H04N5/378

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

公开(公告)号：US10483303B1

公开(公告)日：2019-11-19

申请号：US16179080

申请日：2018-11-02

Applicant: Omnivision Technologies, Inc.

Inventor： Keiji Mabuchi ,  Sohei Manabe

IPC: H01L31/00 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor is provided. The image sensor includes: a first pixel column, including: a first pixel unit; a second pixel unit, vertically adjacent to the first pixel unit; a first column bit line coupled to the first pixel unit, wherein image data acquired by the first pixel unit is read out through the first column bit line; and a second column bit line coupled to the second pixel unit, wherein image data acquired by the second pixel unit is read out through the second column bit line; and a second pixel column horizontally adjacent to the first pixel column, wherein the first pixel column and the second pixel column are mirror-symmetrical with respect to a connection between the pixel units and the column bit lines.

公开(公告)号：US20190339392A1

公开(公告)日：2019-11-07

申请号：US15972409

申请日：2018-05-07

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: G01S17/89 ,  H01L27/146 ,  G01S7/486 ,  H04N5/378 ,  H04N13/254 ,  H04N5/374

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US10269846B2

公开(公告)日：2019-04-23

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L31/0232

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US20190109169A1

公开(公告)日：2019-04-11

申请号：US16150135

申请日：2018-10-02

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US10128299B1

公开(公告)日：2018-11-13

申请号：US15728893

申请日：2017-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US10062722B2

公开(公告)日：2018-08-28

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US20180151610A1

公开(公告)日：2018-05-31

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02327

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.