公开(公告)号：US09379159B2

公开(公告)日：2016-06-28

申请号：US14515307

申请日：2014-10-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后，在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

公开(公告)号：US09276029B1

公开(公告)日：2016-03-01

申请号：US14601016

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Chia-Ying Liu ,  Yin Qian ,  Jin Li

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.

Abstract translation: 彩色图像传感器包括以像素阵列排列的多个像素单元。 多个滤色器布置在设置在像素阵列上的滤色器阵列中。 每个滤色器与相应的底层像素单元对齐。 光学隔离栅格设置在滤色器阵列上方，使得入射光在被引导通过滤色器阵列到像素阵列之前被引导通过光隔离栅格。 光隔离栅格包括多个侧壁，其布置成在光隔离栅格中限定多个开口。 每个开口与相应的滤色器对准，使得每个滤色器通过光学隔离栅格光学隔离，以仅通过多个开口中的相应对准的一个开口接收入射光。

公开(公告)号：US09177982B2

公开(公告)日：2015-11-03

申请号：US14319807

申请日：2014-06-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

公开(公告)号：US09142581B2

公开(公告)日：2015-09-22

申请号：US13669107

申请日：2012-11-05

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Tiejun Dai ,  Duli Mao ,  Cunyu Yang ,  Howard E. Rhodes

IPC: H01L27/146 ,  H01L23/58 ,  H01L23/00

CPC classification number: H01L27/1469 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/585 ,  H01L24/05 ,  H01L24/08 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12043 ,  H01L2924/1434 ,  H01L2924/37001 ,  H01L2224/80 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract translation: 集成电路系统包括在电介质的接合界面处结合到第二器件晶片的第一器件晶片。 每个晶片包括多个模具，其中每个模具包括形成在模具的边缘区域处的装置，金属堆叠和密封环。 包括在第二器件晶片的管芯中的密封圈各自包括设置有金属的第一导电路径，所述第一导电路径形成在从第二器件晶片的背面延伸穿过第二器件晶片的第一开口中，并且通过接合界面到达密封环 在第一器件晶片中的相应管芯。

公开(公告)号：US08921187B2

公开(公告)日：2014-12-30

申请号：US13777197

申请日：2013-02-26

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

公开(公告)号：US20140035089A1

公开(公告)日：2014-02-06

申请号：US14052944

申请日：2013-10-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson H. Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US11557625B2

公开(公告)日：2023-01-17

申请号：US16853684

申请日：2020-04-20

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Ming Zhang ,  Yin Qian ,  Alireza Bonakdar

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/14 ,  H01L31/0352

Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.

公开(公告)号：US11323608B2

公开(公告)日：2022-05-03

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

公开(公告)号：US10892290B2

公开(公告)日：2021-01-12

申请号：US15937742

申请日：2018-03-27

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/288 ,  H01L21/3213

Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.

公开(公告)号：US20200045223A1

公开(公告)日：2020-02-06

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.