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    Antireflective coatings with gradation and methods for forming the same
    64.
    发明授权
    Antireflective coatings with gradation and methods for forming the same 有权
    具有渐变的抗反射涂层及其形成方法

    公开(公告)号：US09341751B2

    公开(公告)日：2016-05-17

    申请号：US13713899

    申请日：2012-12-13

    申请人： Intermolecular Inc.

    发明人： Nikhil Kalyankar ,  Richard Blacker ,  Minh Huu Le ,  Mark Lewis ,  Liang Liang

    IPC分类号： B05D5/06 ,  G02B1/115

    CPC分类号： G02B1/115

    摘要： Embodiments provided herein describe antireflective coatings and methods for forming antireflective coatings. A substrate is provided. A first antireflective layer is formed over the substrate. The first antireflective layer has a first refractive index. A second antireflective layer is formed on the first antireflective layer. The second antireflective layer has a second refractive index. The first antireflective layer and the second antireflective layer jointly form an antireflective coating. The antireflective coating is graded such that the antireflective coating comprises at least three sub-layers, each of the at least three sub-layers having a unique refractive index.

    摘要翻译： 本文提供的实施方案描述了用于形成抗反射涂层的抗反射涂层和方法。 提供基板。 在衬底上形成第一抗反射层。 第一抗反射层具有第一折射率。 在第一抗反射层上形成第二抗反射层。 第二抗反射层具有第二折射率。 第一抗反射层和第二抗反射层共同形成抗反射涂层。 抗反射涂层被分级，使得抗反射涂层包含至少三个子层，所述至少三个子层中的每一个具有独特的折射率。

    Silver Based Conductive Layer for Flexible Electronics
    65.
    发明申请
    Silver Based Conductive Layer for Flexible Electronics 有权
    银导电层柔性电子学

    公开(公告)号：US20150327366A1

    公开(公告)日：2015-11-12

    申请号：US14807336

    申请日：2015-07-23

    申请人： Intermolecular Inc.

    发明人： Mohd Fadzli Anwar Hassan ,  Guowen Ding ,  Minh Huu Le ,  Minh Anh Anh Nguyen ,  Zhi-Wen Wen Sun ,  Guizhen Zhang

    IPC分类号： H05K1/09 ,  H05K1/02

    CPC分类号： H05K1/092 ,  C23C28/42 ,  C23C30/00 ,  H01L51/0097 ,  H01L51/5234 ,  H05K1/0274 ,  Y10T428/265

    摘要： Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.

    摘要翻译： 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，使得导电叠层可以具有改善的延展性。

    Optical absorbers
    66.
    发明授权
    Optical absorbers 有权
    光吸收器

    公开(公告)号：US09177876B2

    公开(公告)日：2015-11-03

    申请号：US14105797

    申请日：2013-12-13

    申请人： Intermolecular, Inc.

    发明人： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

    IPC分类号： H01L21/66 ,  H01L31/032 ,  H01L31/0749

    CPC分类号： H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

    摘要： Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

    摘要翻译： 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

    Systems, Methods, and Apparatus for Integrated Glass Units Having Adjustable Transmissivities
    67.
    发明申请
    Systems, Methods, and Apparatus for Integrated Glass Units Having Adjustable Transmissivities 审中-公开
    用于具有可调透射率的集成玻璃单元的系统，方法和装置

    公开(公告)号：US20150177585A1

    公开(公告)日：2015-06-25

    申请号：US14135462

    申请日：2013-12-19

    申请人： Intermolecular, Inc.

    发明人： Guowen Ding ,  Minh Huu Le

    IPC分类号： G02F1/15 ,  C23C16/40

    CPC分类号： G02F1/1523

    摘要： Disclosed herein are systems, methods, and apparatus for forming adjustable windows may include a substrate and a first conducting oxide layer formed over the substrate. The adjustable windows may further include a spectral tuning layer formed over the first conducting oxide layer and an ion conductor layer formed over the spectral tuning layer. The adjustable windows may also include an ion storage layer formed over the ion conductor layer and a second conducting oxide layer formed over the ion storage layer. In some embodiments, the spectral tuning layer may be configured to change an infrared transmissivity of the adjustable window. Furthermore, the spectral tuning layer may be configured to toggle a solar heat gain ratio coefficient of the adjustable window between two or more solar heat gain ratio coefficients.

    摘要翻译： 本文公开了用于形成可调节窗口的系统，方法和装置可以包括衬底和形成在衬底上的第一导电氧化物层。 可调窗可进一步包括在第一导电氧化物层上形成的光谱调谐层和在光谱调谐层上形成的离子导体层。 可调节窗口还可以包括形成在离子导体层上的离子存储层和形成在离子存储层上的第二导电氧化物层。 在一些实施例中，频谱调谐层可以被配置为改变可调窗口的红外透射率。 此外，频谱调谐层可以被配置为在两个或多个太阳能热增益比系数之间切换可调整窗口的太阳能热增益系数。

    High productivity combinatorial screening for stable metal oxide TFTs
    68.
    发明授权
    High productivity combinatorial screening for stable metal oxide TFTs 有权
    用于稳定金属氧化物TFT的高生产率组合筛选

    公开(公告)号：US09012261B2

    公开(公告)日：2015-04-21

    申请号：US14094379

    申请日：2013-12-02

    申请人： Intermolecular, Inc.

    发明人： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

    IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/306 ,  H01L21/02 ,  H01L21/465 ,  H01L21/70 ,  H01L27/12

    CPC分类号： H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    摘要： Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate electrode deposition, gate electrode patterning, gate dielectric deposition, gate dielectric patterning, metal-based semiconductor material (e.g. IGZO) deposition, metal-based semiconductor material (e.g. IGZO) patterning, etch stop deposition, etch stop patterning, source/drain deposition, source/drain patterning, passivation deposition, or passivation patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    摘要翻译： 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅电极沉积，栅极电极图案化，栅极介电沉积，栅极电介质图案化，金属基半导体材料（例如IGZO）沉积，金属基半导体材料（例如IGZO）图案化，蚀刻停止 沉积，蚀刻停止构图，源极/漏极沉积，源极/漏极图案化，钝化沉积或钝化图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    Corrosion-Resistant Silver Coatings with Improved Adhesion to III-V Materials
    69.
    发明申请
    Corrosion-Resistant Silver Coatings with Improved Adhesion to III-V Materials 审中-公开
    耐腐蚀银涂层与III-V材料的粘合性改善

    公开(公告)号：US20150093500A1

    公开(公告)日：2015-04-02

    申请号：US14136125

    申请日：2013-12-20

    申请人： Intermolecular, Inc.

    发明人： Teresa B. Sapirman ,  Jianhua Hu ,  Minh Huu Le

    IPC分类号： H01B13/00

    CPC分类号： H01L33/405 ,  H01L2933/0016

    摘要： The electrical and optical performance of silver LED reflective contacts in III-V devices such as GaN LEDs is limited by silver's tendency to agglomerate during annealing processes and to corrode on contact with silver-reactive materials elsewhere in the device (for example, gallium or aluminum). Agglomeration and reaction are prevented, and crystalline morphology of the silver layer may be optimized, by forming a diffusion-resistant transparent conductive layer between the silver and the source of silver-reacting metal, (2) doping the silver or the diffusion-resistant transparent conductive layer for improved adhesion to adjacent layers, or (3) doping the silver with titanium, which in some embodiments prevents agglomeration and promotes crystallization of the silver in the preferred orientation.

    摘要翻译： III-V器件如GaN LED中的银LED反射触点的电学和光学性能受到退火过程中银的凝聚趋势的限制，并且与器件其他地方的银反应性材料（例如，镓或铝 ）。 防止聚集和反应，通过在银和银反应金属的源之间形成耐扩散的透明导电层，可以优化银层的结晶形态，（2）掺杂银或扩散阻挡的透明 导电层，用于改善与相邻层的粘附性，或（3）用钛掺杂银，在一些实施方案中，该银防止聚集并促进优选<111>取向的银的结晶。

    Conductive Transparent Reflector
    70.
    发明申请
    Conductive Transparent Reflector 审中-公开
    导电透明反射器

    公开(公告)号：US20150060910A1

    公开(公告)日：2015-03-05

    申请号：US14014029

    申请日：2013-08-29

    申请人： Intermolecular Inc.

    发明人： Guowen Ding ,  Jianhua Hu ,  Minh Huu Le

    IPC分类号： H01L33/46 ,  H01L33/42

    CPC分类号： H01L33/405 ,  H01L33/42

    摘要： Methods to improve the reflection of light emitting devices are disclosed. A method consistent with the present disclosure includes forming a light generating layer over a site-isolated region of a substrate. Next, forming a first transparent conductive layer over the light generating layer. Forming a low refractive index material over the first transparent conductive layer, and in time, forming a second transparent conductive layer over the low refractive index material. Subsequently, forming a reflective material layer thereon. Accordingly, methods consistent with the present disclosure may form a plurality of light emitting devices in various site-isolated regions on a substrate.

    摘要翻译： 公开了改善发光器件反射的方法。 与本公开一致的方法包括在衬底的位置隔离区域上形成发光层。 接着，在光生成层上形成第一透明导电层。 在第一透明导电层上形成低折射率材料，并在时间上在低折射率材料上形成第二透明导电层。 随后，在其上形成反射材料层。 因此，与本公开一致的方法可以在衬底上的各种位置隔离区域中形成多个发光器件。