Abstract:
Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
Abstract:
A robot system and a control method thereof in which, when a robot is located in a docking region, the robot calculates a distance by emitting infrared rays and detecting ultrasonic waves oscillated from a charging station, measures a distance from the charging station and performs docking with charging station. The distance between the robot and the charging station is precisely measured, thereby performing smooth and correct docking of the robot with the charging station. Further, the robot emits infrared rays only while performing docking with the charging station and thus reduces power consumption required for infrared ray emission, and wakes up a circuit in the charging station based on the infrared rays emitted from the robot and thus reduces power consumption of the charging station.
Abstract:
A The CMOS image sensor includes a pixel array including pixels arranged in a matrix of rows and columns and a row selection unit configured to generate selection signals for simultaneously or concurrently selecting at least two rows from the rows of the pixel array in response to a received row address. An analog-to-digital conversion unit is configured to convert pixel data output from the at least two rows selected from the pixel array into a digital video signal and output the digital video signal. The pixel array outputs the pixel data in response to the selection signals.
Abstract:
An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.
Abstract:
A two-path sigma-delta analog-to-digital converter and an image sensor including the same are provided. The two-path sigma-delta analog-to-digital converter includes at least one integrator configured to integrate a first integrator input signal during a second half cycle of a clock signal and integrate a second integrator input signal during a first half cycle of the clock signal by using a single operational amplifier; a quantizer configured to quantize integrated signals from the at least one integrator and output a first digital signal and a second digital signal; and a feedback loop configured to feed back the first and second digital signals to an input of the at least one integrator. A first analog signal and a second analog signal respectively input from two input paths are respectively converted to the first and second digital signals using the single operational amplifier, thereby increasing power efficiency and reducing an area.
Abstract:
Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
Abstract:
An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.
Abstract:
A two-path sigma-delta analog-to-digital converter and an image sensor including the same are provided. The two-path sigma-delta analog-to-digital converter includes at least one integrator configured to integrate a first integrator input signal during a second half cycle of a clock signal and integrate a second integrator input signal during a first half cycle of the clock signal by using a single operational amplifier; a quantizer configured to quantize integrated signals from the at least one integrator and output a first digital signal and a second digital signal; and a feedback loop configured to feed back the first and second digital signals to an input of the at least one integrator. A first analog signal and a second analog signal respectively input from two input paths are respectively converted to the first and second digital signals using the single operational amplifier, thereby increasing power efficiency and reducing an area.
Abstract:
The analog-digital converter (ADC) includes a modulator and a digital integrator. The modulator is configured to modulate an input signal and output a modulated signal. The digital integrator includes a plurality of accumulators serially connected to one another. The digital integrator is configured to integrate the modulated signal to output an integration result.