-
61.发明授权公开(公告)号：US10886410B2
公开(公告)日：2021-01-05
申请号：US16393023
申请日：2019-04-24
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Li , Wei Song , Luke Ding , Jun Liu , Liangchen Yan
IPC: H01L29/786 , H01L27/32 , H01L29/66
Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
-
公开(公告)号：US10680053B1
公开(公告)日：2020-06-09
申请号：US16441422
申请日：2019-06-14
Inventor： Yingbin Hu , Liangchen Yan , Ce Zhao , Yuankui Ding , Yang Zhang , Yongchao Huang , Luke Ding , Jun Liu
Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
-
Patent Agency Ranking
63.发明申请公开(公告)号：US20200091199A1
公开(公告)日：2020-03-19
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L29/40 , H01L21/3213
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
-
公开(公告)号：US20200035767A1
公开(公告)日：2020-01-30
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
-
65.发明申请公开(公告)号：US20200013867A1
公开(公告)日：2020-01-09
申请号：US16397386
申请日：2019-04-29
Inventor： Tongshang SU , Dongfang Wang , Ce Zhao , Bin Zhou , Liangchen Yan
IPC: H01L29/45 , H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L21/441 , H01L21/467 , H01L21/4763 , H01L29/66 , G03F7/16 , G03F7/20 , G03F7/26
Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
-
66.发明申请公开(公告)号：US20180315961A1
公开(公告)日：2018-11-01
申请号：US15802431
申请日：2017-11-02
Inventor： Jun Wang , Ce Zhao , Dongfang Wang , Bin Zhou
CPC classification number: H01L51/56 , H01L27/3237 , H01L51/5072 , H01L51/5209 , H01L51/5218 , H01L51/5225 , H01L51/5275
Abstract: The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.
-
公开(公告)号：US10079352B2
公开(公告)日：2018-09-18
申请号：US15201790
申请日：2016-07-05
Inventor： Leilei Cheng , Yuankui Ding , Dongfang Wang , Ce Zhao
CPC classification number: H01L51/0097 , H01L27/3244 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
-
-
-
-
-
-
Search Results
67
records
(took 0.017 seconds)
