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公开(公告)号：US11387371B2
公开(公告)日：2022-07-12
申请号：US16330255
申请日：2018-07-02
Inventor： Jun Wang , Zhonghao Huang , Yongliang Zhao , Seung Moo Rim
IPC: H01L29/786 , H01L27/12 , H01L29/49 , H01L29/66 , G02F1/1368 , H01L27/32
Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.
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62.发明授权公开(公告)号：US11145230B2
公开(公告)日：2021-10-12
申请号：US16898581
申请日：2020-06-11
Inventor： Jun Wang , Dongfang Wang , Liangchen Yan , Guangyao Li , Haitao Wang , Qinghe Wang , Yingbin Hu , Yang Zhang , Tongshang Su
Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.
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63.发明申请公开(公告)号：US20200258919A1
公开(公告)日：2020-08-13
申请号：US15768297
申请日：2017-08-24
Inventor： Zhonghao Huang , Yongliang Zhao , Jun Wang , Yutong Yang , Jianfei Shi , Baosheng He , Xu Wu
IPC: H01L27/12 , H01L29/786 , H01L29/66
Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.
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公开(公告)号：US20190131410A1
公开(公告)日：2019-05-02
申请号：US15940043
申请日：2018-03-29
Inventor： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Ning Liu
IPC: H01L29/24 , H01L29/45 , H01L29/49 , H01L29/786 , H01L29/84 , H01L31/0392 , H01L31/032 , H01L31/113 , H01L29/66 , H01L21/02 , H01L21/445
CPC classification number: H01L29/24 , H01L21/02568 , H01L21/445 , H01L27/1214 , H01L27/1222 , H01L27/283 , H01L29/1606 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/786 , H01L29/78603 , H01L29/78642 , H01L29/78696 , H01L29/84 , H01L31/0296 , H01L31/032 , H01L31/03926 , H01L31/1136 , H01L51/05
Abstract: Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.
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65.发明申请公开(公告)号：US20180188289A1
公开(公告)日：2018-07-05
申请号：US15515280
申请日：2016-05-13
Inventor： Yi Qu , Guoqing Zhang , Zhigang Sun , Hongxia Yang , Shanshan Bao , Jun Wang , Tuan Liang
Abstract: A display substrate includes: a display driving signal line; and at least one set of testing pads, wherein each set of the testing pads includes: a plurality of light-on testing pads arranged successively and connected to the display driving signal line; and two pin-miss testing pads electrically connected to one another while not connected to the display driving signal line.
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Patent Agency Ranking
66.发明授权公开(公告)号：US12237422B2
公开(公告)日：2025-02-25
申请号：US17765238
申请日：2021-05-20
Inventor： Qinghe Wang , Tongshang Su , Jun Wang , Yongchao Huang , Haitao Wang , Ning Liu , Jun Cheng , Yingbin Hu
IPC: H01L29/786 , G11C19/28 , H01L29/66
Abstract: A thin film transistor, including: at least one active layer pattern including a first conductive pattern, a second conductive pattern, and a semiconductor pattern; a gate on a side of the active layer pattern; a first electrode and a second electrode on a side of the gate away from the active layer pattern, and respectively electrically connected with the first conductive pattern and the second conductive pattern, a conductive shielding pattern is provided corresponding to the semiconductor pattern in at least one active layer pattern, the conductive shielding pattern is on a side of the semiconductor pattern away from the gate and is electrically connected with the first electrode, and a buffer layer is between the conductive shielding pattern and the semiconductor pattern; an orthographic projection of the conductive shielding pattern on a plane where the semiconductor pattern corresponding thereto is located at least partially covers the semiconductor pattern corresponding.
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67.发明授权公开(公告)号：US11847991B2
公开(公告)日：2023-12-19
申请号：US17778125
申请日：2021-05-11
Inventor： Yunyun Liang , Liugang Zhou , Ke Dai , Liu He , Jianwei Sun , Jun Wang , Qing Li , Yu Quan
IPC: G09G3/36
CPC classification number: G09G3/3696 , G09G3/3614 , G09G2310/08 , G09G2320/0247 , G09G2330/021
Abstract: There is provided a voltage supply circuit, in which a signal output end of a power management integrated circuit, a signal input end of a transmission branch, and a signal input end of a voltage reduction branch are coupled to a first node; a signal output end of transmission branch and a signal output end of the voltage reduction branch are coupled to a second node; the power management integrated circuit supplies an initial voltage to the first node; the transmission branch is coupled to a control signal terminal, and switch between a conducting state and a cutoff state in response to control of a control signal, and write the initial voltage into the second node in the conducting state; and the voltage reduction branch performs voltage reduction on the initial voltage at the first node to obtain a reduced voltage to be written into the second node.
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公开(公告)号：US20230229196A1
公开(公告)日：2023-07-20
申请号：US17924526
申请日：2021-05-12
Inventor： Ming Li , Lin Xiong , Yuliang Wang , Jun Wang , Xu Zhao , Shenghua Bai , Jie Li , Xing Zou , Fanyou Li , Mu Zeng , Chao Liu , Miao Wang , Jie Tu , Zhoujun Chen , Guifang He , Chunrong Lai
IPC: G06F1/16
CPC classification number: G06F1/1656 , G06F1/1616
Abstract: The display module (100) includes: a supporting member (2) and a display panel (2), supporting member (1) includes an interlayer part (11) and a supporting part (12), the surface of the side of the supporting part (12) that is away from the interlayer part (11) is a supporting curved face (121), the supporting curved face (121) protrudes in the direction away from the interlayer part (11), the display panel (2) includes a non-bending part (21), a bending part (22) and a connecting part (23), the non-bending part (21) and the connecting part (23) are located on the two sides of the interlayer part (11) in the thickness direction of the interlayer part (11), the bending part (22) supports the side of the supporting part (12) that is away from the interlayer part (11), and the inner surface of the bending part (22) adheres to the supporting curved face (121).
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公开(公告)号：US11672149B2
公开(公告)日：2023-06-06
申请号：US16910766
申请日：2020-06-24
Inventor： Guangyao Li , Dongfang Wang , Jun Wang , Haitao Wang , Qinghe Wang , Ning Liu , Wei Li , Yingbin Hu , Yang Zhang
IPC: H10K59/131 , H10K71/70 , H10K71/00 , H10K102/00 , H01L27/32 , H01L51/00 , H01L51/56
CPC classification number: H01L27/3276 , H01L51/0031 , H01L51/56 , H01L2251/5392 , H01L2251/568
Abstract: The present disclosure provides an OLED display panel and a method for detecting the OLED display panel, and a display device. The OLED display panel includes a base substrate including a display area and a non-display area surrounding the display area and having a first region adjacent to the display area. The display area includes a drive signal line and a power supply voltage signal line both extending from the display area to the first region. The drive signal line includes, in the first region, a first section of wiring at an anode layer, the power supply voltage signal line includes, in the first region, a second section of wiring at a gate metal layer, and parts of the drive signal line and the power supply voltage signal line in the display area are located at a source-drain metal layer.
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公开(公告)号：US11307498B2
公开(公告)日：2022-04-19
申请号：US16094421
申请日：2018-03-26
Inventor： Jun Wang , Guangcai Yuan , Dongfang Wang , Chong Fang , Guangyao Li
Abstract: A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.
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