公开(公告)号：US20220310776A1

公开(公告)日：2022-09-29

申请号：US17210130

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Tony P. CHIANG

IPC: H01L49/02 ,  C23C16/40 ,  C23C14/06 ,  C23C16/455 ,  C23C28/04

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.

公开(公告)号：US20220199414A1

公开(公告)日：2022-06-23

申请号：US17126797

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

IPC: H01L21/308 ,  H01L21/67 ,  G03F7/20

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.

公开(公告)号：US20220004104A1

公开(公告)日：2022-01-06

申请号：US17468536

申请日：2021-09-07

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/67 ,  G03F7/40 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20210317573A1

公开(公告)日：2021-10-14

申请号：US16902665

申请日：2020-06-16

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Andrew C. KUMMEL ,  James HUANG ,  Yunil CHO

IPC: C23C16/40 ,  C23C28/04 ,  C23C16/455

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20210305501A1

公开(公告)日：2021-09-30

申请号：US17328491

申请日：2021-05-24

Applicant: Applied Materials, Inc.

Inventor： John O. DUKOVIC ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Praburam GOPALRAJA ,  Steven Hiloong WELCH ,  Bhargav S. CITLA

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：US20210257252A1

公开(公告)日：2021-08-19

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Nikolaos BEKIARIS ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US20210225687A1

公开(公告)日：2021-07-22

申请号：US16744478

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Adib M. KHAN ,  Qiwei LIANG

IPC: H01L21/687 ,  H01L21/677

Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

公开(公告)号：US20210088896A1

公开(公告)日：2021-03-25

申请号：US16983093

申请日：2020-08-03

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Pinkesh Rohit SHAH ,  Srinivas D. NEMANI ,  Steven Hiloong WELCH ,  Christopher Siu Wing NGAI ,  Ellie Y. YIEH

IPC: G03F1/36 ,  G03F7/38

Abstract: Embodiments of the disclosure relate to lithography simulation and optical proximity correction. Field-guided post exposure bake processes have enabled improved lithography performance and various parameters of such processes are included in the optical proximity correction models generated in accordance with the embodiments described herein. An optical proximity correction model includes one or more parameters of anisotropic acid etching characteristics, ion generation and/or movement, electron movement, hole movement, and chemical reaction characteristics.

公开(公告)号：US20200233307A1

公开(公告)日：2020-07-23

申请号：US16600101

申请日：2019-10-11

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh BANGAR ,  Christopher S. NGAI ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Steven Hiloong WELCH

IPC: G03F7/16 ,  G03F7/09 ,  G03F7/20

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

公开(公告)号：US20200035513A1

公开(公告)日：2020-01-30

申请号：US16510848

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/67 ,  F01K1/00

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.