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公开(公告)号：US11251045B2
公开(公告)日：2022-02-15
申请号：US17088654
申请日：2020-11-04
摘要： A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding.
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公开(公告)号：US11139170B2
公开(公告)日：2021-10-05
申请号：US16540133
申请日：2019-08-14
IPC分类号： H01L21/18 , H01L21/263 , H01L21/67
摘要： A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
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公开(公告)号：US20210183666A1
公开(公告)日：2021-06-17
申请号：US17188114
申请日：2021-03-01
IPC分类号： H01L21/67 , H01L21/687
摘要： A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method includes the steps of arranging a substrate stack, formed from the first substrate and the second substrate and aligned on the contact surfaces, between a first heating surface of a first heating system and a second heating surface of a second heating system.
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公开(公告)号：US20210129520A1
公开(公告)日：2021-05-06
申请号：US17124931
申请日：2020-12-17
发明人： Gerald Kreindl
摘要： A method for embossing a nanostructure, formed on a nanostructure punch, into a punch surface of a curable material which has been applied to a substrate. The method includes the following steps, especially following sequence: alignment of the nanostructure relative to the punch surface, embossing of the punch surface by a) prestressing of the nanostructure punch by deformation of the nanostructure punch and/or prestressing of the substrate by deformation of the substrate, b) making contact of a partial area of the punch surface with the nanostructure punch and c) automatic contacting of the remaining surface at least partially, especially predominantly, by the prestressing of the nanostructure punch and/or the prestressing of the substrate.
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公开(公告)号：US10943807B2
公开(公告)日：2021-03-09
申请号：US16830389
申请日：2020-03-26
IPC分类号： H01L21/00 , H01L21/68 , H01L21/67 , H01L23/544 , H01L21/683
摘要： A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units and a corresponding device for alignment and contact.
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公开(公告)号：US10748770B2
公开(公告)日：2020-08-18
申请号：US16821139
申请日：2020-03-17
摘要： A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding.
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公开(公告)号：US20200176437A1
公开(公告)日：2020-06-04
申请号：US16483077
申请日：2017-03-02
发明人： Markus Wimplinger
IPC分类号： H01L25/00 , H01L25/065 , H01L23/00
摘要： A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.
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公开(公告)号：US20200089121A1
公开(公告)日：2020-03-19
申请号：US16470709
申请日：2016-12-20
发明人： Bernhard Thallner , Boris Povazay
IPC分类号： G03F7/20
摘要： A method and device for exposing a light-sensitive layer, said method comprising: generating at least one light ray by use of at least one light source, illuminating pixels of an exposure pattern by use of at least one micromirror device having a plurality of micromirrors with respective mirror intensity profiles, and overlaying the mirror intensity profiles of adjacent micromirrors to provide a pattern intensity profile of the exposure pattern by summing the mirror intensity profiles of each illuminated pixel of the exposure pattern.
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公开(公告)号：US10519057B2
公开(公告)日：2019-12-31
申请号：US15509874
申请日：2015-08-27
发明人： Gerald Kreindl , Mustapha Chouiki
摘要： A method for the production of an optical glass element, with the following process sequence: a) applying a liquid embossing material on an embossing die, b) embossing the embossing material at a temperature of less than 500° C., c) hardening the embossing material, d) sintering the embossing material and thus executing the primary forming of the optical glass element. In addition, an optical glass element that is produced with the method, a device for implementing the method, and a use of this device are disclosed.
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公开(公告)号：US10438798B2
公开(公告)日：2019-10-08
申请号：US15862678
申请日：2018-01-05
IPC分类号： H01L21/18 , H01L21/263 , H01L21/67
摘要： A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
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