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537 条记录 (耗时 0.026 秒)

    Photosensitive polymer containing silicon and a resist composition using the same
    53.
    发明申请
    Photosensitive polymer containing silicon and a resist composition using the same 有权
    含有硅的光敏聚合物和使用其的抗蚀剂组合物

    公开(公告)号：US20040126699A1

    公开(公告)日：2004-07-01

    申请号：US10721400

    申请日：2003-11-25

    申请人： Samsung Electronics Co., Inc.

    发明人： Sang-Jun Choi

    IPC分类号： G03C001/73 ,  G03F007/039

    CPC分类号： G03F7/0758 ,  G03F7/0392 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1. 1 In formula 1, R1 of the first monomer and R3 of the third monomer are an alkyl group. R2 of the first monomer is hydrogen, alkyl, alkoxy, or carbonyl. The X of the first monomer is an integer selected from 1 to 4. Further, m/(mnullnnullp) is about 0.1 to about 0.4, n/(mnullnnullp) is about 0.1 to about 0.5, and p/(mnullnnullp) is about 0.1 to about 0.4.

    摘要翻译： 公开了包含硅的光敏聚合物和使用其的抗蚀剂组合物。 感光性聚合物具有下式1.在式1中，第一单体的R 1和第三单体的R 3为烷基。 第一单体的R2是氢，烷基，烷氧基或羰基。 另外，m /（m + n + p）为约0.1〜约0.4，n /（m + n + p）为约0.1〜约0.5，以及 p /（m + n + p）为约0.1至约0.4。

    Photosensitive polymer including fluorine and resist composition containing the same
    56.
    发明申请
    Photosensitive polymer including fluorine and resist composition containing the same 有权
    包含氟的光敏聚合物和含有它的抗蚀剂组合物

    公开(公告)号：US20030228537A1

    公开(公告)日：2003-12-11

    申请号：US10423945

    申请日：2003-04-28

    发明人： Kwang-Sub Yoon ,  Sang-Gyun Woo ,  Ki-Yong Song ,  Sang-Jun Choi

    IPC分类号： G03F007/20 ,  G03F007/30 ,  G03F007/38

    CPC分类号： G03F7/0392 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/108 ,  Y10S430/122 ,  Y10S430/126

    摘要： Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: 1 wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3-C20 alkyl carbonyl, a fluorine-substituted or unsubstituted C3-C20 cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.

    摘要翻译： 公开了一种光敏聚合物，其包含具有下式的五氟甲基乙烯基醚衍生物单体：其中R可以是烷氧基羰基，烷基硅烷，氟取代或未取代的C 3 -C 20烷基羰基，氟取代或未取代的C 3 -C 20环烷基羰基或氟 - 取代或未取代的苯甲酰基取代基。 光敏聚合物是五氟甲基乙烯基醚衍生物单体和至少一种选自（甲基）丙烯酸，（甲基）丙烯酸酯，苯乙烯，降冰片烯，四氟乙烯和马来酸酐单体的另外的单体的聚合产物。 光敏聚合物可以用于具有小于157nm的主要波长的曝光光源的光致抗蚀剂组合物中。

    Composition for resist underlayer film and method for producing the same
    58.
    发明授权
    Composition for resist underlayer film and method for producing the same 有权
    抗蚀剂下层膜用组合物及其制造方法

    公开(公告)号：US06576393B1

    公开(公告)日：2003-06-10

    申请号：US09545453

    申请日：2000-04-07

    申请人： Hikaru Sugita ,  Akio Saito ,  Kinji Yamada ,  Michinori Nishikawa ,  Yoshihisa Ohta ,  Yoshiji Yuumoto

    发明人： Hikaru Sugita ,  Akio Saito ,  Kinji Yamada ,  Michinori Nishikawa ,  Yoshihisa Ohta ,  Yoshiji Yuumoto

    IPC分类号： G03C173

    CPC分类号： G03F7/0751 ,  G03F7/09 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

    摘要： Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a  (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.

    摘要翻译： 公开了抗蚀剂图案的再现性优异的抗蚀剂下层膜的组合物，对抗蚀剂的附着性优异，对抗蚀剂曝光后使用的显影液的耐受性优异，抗蚀剂的氧气灰化的膜损失降低; 及其制备方法，该组合物包含：（A）至少一种选自（A-1）由下列通式（1）表示的化合物的化合物的水解产物和缩合物： ）：其中R1表示氢原子，氟原子或一价有机基团，R2表示一价有机基团，a表示0〜2的整数，（A-2）由以下通式（ 2）：其中可以相同或不同的R 3，R 4，R 5和R 6各自表示一价有机基团，b和c可以相同或不同，各自表示0-2的整数，R7表示氧 原子或 - （CH 2）n - ，d表示0或1，n表示1〜6的整数。 和（B）通过紫外线照射和/或加热产生酸的化合物。

    Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers
    59.
    发明申请
    Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers 失效
    通过氟化低聚物的目标化学键结构的结构生长扩大氟化抗蚀剂聚合物的抗蚀剂结构

    公开(公告)号：US20030073043A1

    公开(公告)日：2003-04-17

    申请号：US10186139

    申请日：2002-06-28

    发明人： Jorg Rottstegge ,  Christian Eschbaumer ,  Christoph Hohle ,  Waltraud Herbst ,  Michael Sebald

    IPC分类号： G03F007/00

    CPC分类号： G03F7/40 ,  G03F7/0046 ,  G03F7/0392 ,  Y10S430/126

    摘要： A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

    摘要翻译： 抗蚀剂结构的曝光后放大的方法通过氟化低聚物的目标化学键结构的结构生长来扩大氟化抗蚀剂聚合物的抗蚀剂结构。 在第一步骤中，将含氟抗蚀剂施加到基底上。 抗蚀剂曝光和显影后，扩增剂的结合化学放大抗蚀剂结构。 由于分子链的混合性提高，优选使用含氟扩增剂来实现聚合物与扩增剂之间改善的反应。

    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
    60.
    发明申请
    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same 有权
    用于光致抗蚀剂的交联单体，以及使用其制备光致抗蚀剂聚合物的方法

    公开(公告)号：US20020177069A1

    公开(公告)日：2002-11-28

    申请号：US10080507

    申请日：2002-02-22

    申请人： Hyundai Electronics Industries Co., Ltd.

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F007/038 ,  G03F007/38 ,  G03F007/40 ,  G03F007/32 ,  G03F007/30

    CPC分类号： G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: 1 wherein, Rnull and Rnull individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10acetal including at least one hydroxyl group.

    摘要翻译： 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法以及所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基; m表示1〜10的数; R为选自直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮，直链或支链C 1-10羧酸 包括至少一个羟基，以及包括至少一个羟基的直链或支链C 1-10缩醛。