公开(公告)号：US5276748A

公开(公告)日：1994-01-04

申请号：US797520

申请日：1991-11-22

Applicant: Gregory A. Magel

Inventor： Gregory A. Magel

IPC: G02B6/13 ,  G02B6/34 ,  G02F1/01 ,  G02F1/015 ,  G02F1/025 ,  G02B6/12

CPC classification number: G02F1/011 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2201/302 ,  G02F2202/101 ,  G02F2202/105

Abstract: An optical modulator is disclosed. The modulator is based upon an ARROW waveguide, consisting of a substrate, a lower cladding, an interference layer, and a core layer. An electronic element is formed in the structure to control the free-carrier concentration in the interference layer. The light is coupled by grating into the interference layer, where the free-carrier concentration is controlled by the element, which in turn controls the modulation of the light in the interference layer before it is coupled back to the core layer.

公开(公告)号：US4685763A

公开(公告)日：1987-08-11

申请号：US902090

申请日：1986-08-27

Applicant: Kunio Tada ,  Yoshikazu Nishiwaki ,  Shunji Matsuoka

Inventor： Kunio Tada ,  Yoshikazu Nishiwaki ,  Shunji Matsuoka

IPC: G02B6/12 ,  G02F1/015 ,  G02F1/025 ,  G02F1/313

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0151 ,  G02F2201/063 ,  G02F2202/101

Abstract: A light modulation device according to the present invention comprises a substrate, a substrate layer, an optical waveguide layer, and buffer layers, in the order from the bottom upward, all formed of either n-type or p-type compound semiconductor crystal. In this light modulation device, in order to capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that refractive index is at least approximately 0.1% higher in the optical waveguide layer than in the substrate layer and in the buffer layers. Further, the carrier density is low in the optical waveguide layer and in the buffer layers so that the applied voltage is applied mainly to the optical waveguide layer. Because of such construction, the light modulation device according to the present invention is free from strict conditions required in an etching process, is small in absorption loss of light, and can be used as a component of monolithic optical integrated circuit.

Abstract translation: 根据本发明的光调制装置，从底部向上依次包括基板，基板层，光波导层和缓冲层，全部由n型或p型化合物半导体晶体形成。 在这种光调制装置中，为了捕获光波导层中的光，化合物半导体的组成比被确定为在光波导层中的折射率比衬底层中的折射率高至少高0.1％ 缓冲层。 此外，光波导层和缓冲层中的载流子密度低，使得施加的电压主要应用于光波导层。 由于这样的结构，本发明的光调制装置没有严格的蚀刻处理条件，光的吸收损耗小，可以作为单片光集成电路的一个部件使用。

公开(公告)号：US20240353696A1

公开(公告)日：2024-10-24

申请号：US18682391

申请日：2021-08-12

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Meishin Chin ,  Takahiko Shindo ,  Shigeru Kanazawa

IPC: G02F1/017 ,  H01S5/026

CPC classification number: G02F1/01708 ,  H01S5/0265 ,  G02F2201/063 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2202/108

Abstract: An EA modulator having a structure in which an increased optical confinement factor is provided. An optical modulator having a high-mesa structure made of an InP-based materials, including: a waveguide core having a multi quantum well structure; a lower selective etching layer inserted into a lower cladding at an interval from the waveguide core; and an upper selective etching layer inserted into an upper cladding at an interval from the waveguide core, where the lower selective etching layer and the upper selective etching layer are narrower than a mesa width of the high-mesa structure.

公开(公告)号：US20240345304A1

公开(公告)日：2024-10-17

申请号：US18382778

申请日：2023-10-23

Applicant: II-VI Delaware, Inc.

Inventor： Justin M. Hannigan ,  Christoph Greiner ,  Ramesh Sundaram ,  Juan Ni ,  Victoria Sorg ,  Dmitri Iazikov

IPC: G02B5/30 ,  G02F1/095

CPC classification number: G02B5/3058 ,  G02B5/3041 ,  G02F1/0955 ,  G02F1/165 ,  G02F2201/063 ,  G02F2202/10 ,  G02F2202/28

Abstract: An optical isolator includes a polarizer for receiving an optical signal from an optical signal source, a Faraday rotator disposed on one surface of the polarizer for rotating a polarization of the optical signal output by the polarizer and outputting the same as a rotator output optical signal, and an analyzer disposed on an opposing surface of the polarizer for receiving the rotator output optical signal and for outputting at least a part thereof. The polarizer and the analyzer each include a number of spaced elongated dielectric ridges. Each dielectric ridge has a length direction extending along the one surface of the Faraday rotator, pair of spaced sides that extend away from the one surface of the Faraday rotator and a top extending between the spaced sides opposite the one surface of the Faraday rotator. Each dielectric ridge includes an electrically conductive coating on each side of the dielectric ridge.

公开(公告)号：US20240310663A1

公开(公告)日：2024-09-19

申请号：US18268070

申请日：2021-12-22

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Yuki KUGIMOTO ,  Yu KATAOKA ,  Shingo TAKANO

IPC: G02F1/035

CPC classification number: G02F1/035 ,  G02F2201/063

Abstract: Provided is an optical waveguide element that can suppress insertion loss related to coupling to an optical fiber or the like while achieving a reduction in size of an optical waveguide element, and has a SSC structure with high light resistance, heat resistance, or manufacturing efficiency. An optical waveguide element includes an optical waveguide substrate 1 having a rib-type optical waveguide 10 formed of a material having an electro-optic effect, and a holding member 2 that is disposed and fixed at a position where an input end or an output end of the rib-type optical waveguide is formed, to overlap the optical waveguide substrate, in which another optical waveguide 20 with a mode field diameter greater than that of the rib-type optical waveguide is formed on a surface of the holding member facing the rib-type optical waveguide, and the optical waveguide substrate and the holding member are bonded through an adhesive layer 30.

公开(公告)号：US20240231133A1

公开(公告)日：2024-07-11

申请号：US18610957

申请日：2024-03-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chan-Hong Chern

IPC: G02F1/025 ,  G02B6/12 ,  G02F1/21 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02F1/225 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F1/212 ,  G02F2201/063 ,  G02F2203/50

Abstract: An optical phase-shifting device includes a ribbed waveguide portion on an insulating layer, the waveguide portion having a p-n or p-i-n junction extending in a longitudinal direction and having a height. A pair of slab portions are disposed adjacent the waveguide portion, one on each side of the ribbed waveguide portion and on the insulation layer. The slab portion have higher doping concentrations than the respective doping concentrations in the ribbed waveguide portion. At least a portion of each slab portion has a height increasing with distance from the waveguide portion, with the slab height being smaller than that of the waveguide portion at the junction between the waveguide portion and slab portion. A pair of contact portions are formed adjacent the respective slab portion and further away from the waveguide portion. A portion of each contact portion can also have a height varying with distance from the waveguide portion.

公开(公告)号：US11940678B2

公开(公告)日：2024-03-26

申请号：US17131470

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Mengyuan Huang ,  David Patel ,  Kejia Li ,  Wei Qian ,  Ansheng Liu

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2202/105

Abstract: An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

公开(公告)号：US20240061280A1

公开(公告)日：2024-02-22

申请号：US18229872

申请日：2023-08-03

Applicant: Apple Inc.

Inventor： Mark A. Arbore ,  Jason S. Pelc

IPC: G02F1/01

CPC classification number: G02F1/0134 ,  G02F2201/063 ,  G02F2203/05

Abstract: Various embodiments disclosed herein describe optomechanical phase shifters. The optomechanical phase shifters may be configured with an asymmetry that improves the performance of the OM phase shifter as a function of wavelength. In some instances, the optomechanical phase shifter includes a section of a waveguide having an asymmetric cross-sectional shape. In other instances an optomechanical phase shifter is incorporated into a controllable optical switch, such that OM phase shifters may be actuated to selectively route light to different outputs of the controllable optical switch.

公开(公告)号：US11656487B2

公开(公告)日：2023-05-23

申请号：US17490590

申请日：2021-09-30

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Yu Kataoka ,  Shingo Takano ,  Norikazu Miyazaki

IPC: G02F1/035

CPC classification number: G02F1/0353 ,  G02F2201/063

Abstract: An optical waveguide element includes a substrate and an optical waveguide that is disposed on the substrate. The optical waveguide has an effective refractive index change portion in which an effective refractive index of the optical waveguide related to a fundamental mode A parallel to a plane of polarization of a light wave propagated through the optical waveguide changes according to propagation of the light wave. In the effective refractive index change portion, a cross-sectional shape of the optical waveguide which is perpendicular to a propagation direction of the light wave is set such that the effective refractive index of the optical waveguide related to the fundamental mode A is higher than an effective refractive index of the optical waveguide related to another fundamental mode B perpendicular to the fundamental mode A.

公开(公告)号：US20180074349A1

公开(公告)日：2018-03-15

申请号：US15559911

申请日：2016-02-17

Applicant: NEC Corporation ,  Photonics Electronics Technology Research Association

Inventor： Junichi FUJIKATA ,  Shigeki TAKAHASHI

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2202/10

Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.