摘要:
An illuminance measuring method and apparatus measures the illuminance on a wafer in an exposure apparatus for projecting a pattern formed on a mask onto a wafer. The illuminance of the mask causes the formation of ghost light on the mask. The apparatus and method use a first technique to measure the illuminance on the wafer while a mask used for actual exposure is mounted in the exposure apparatus and the mask is illuminated. The apparatus and method also use a second technique, different form the first technique, to measure the illuminance on the wafer while the mask used for actual exposure is mounted in the exposure apparatus and the mask is illuminated. The apparatus and method also find the distribution of the ghost light caused by the mask, based on the illuminance measured by these two techniques.
摘要:
A Bi-CMOS circuit includes a first bipolar, a second bipolar transistor and a CMOS control unit for performing switching controls of the first and second bipolar transistors on the basis of an input signal applied to an input terminal and for controlling an output signal output via the output terminal on the basis of the input signal. A turn-OFF unit temporality couples the base of the first bipolar transistor to a low-potential side power supply line on the basis of a current flowing in said control means when the first bipolar transistor is turned OFF, so that the first bipolar transistor can be rapidly turned OFF.
摘要:
A projection exposure method wherein a semi-transparent material effective to partially transmit exposure light and also effective to change a phase of the exposure light is used to form a circuit pattern and a light blocking zone adjacent to the circuit pattern, on a transparent substrate to provide a reticle, the light blocking zone being constituted by a pattern not resolved by a projection optical system, and wherein the reticle is illuminated with the exposure light and is projected on a member to be exposed, through the projection optical system is disclosed. The method includes detecting light quantity of an image of the light blocking zone as formed through the projection optical system, comparing the result of the detection with a predetermined value, and discriminating appropriateness of performing an exposure process with the reticle, on the basis of the comparison.
摘要:
An edge emphasis type phase shift reticle is illuminated obliquely, and zeroth order diffraction light and first order diffraction light caused by a fine pattern of the reticle and having substantially the same intensity are incident and distributed on a pupil of a projection optical system, symmetrically with respect to a predetermined axis, whereby the fine pattern is imaged with use of the zeroth order diffraction light and first order diffraction light.
摘要:
An imaging method for imaging a fine pattern having linear features extending along orthogonal first and second directions is disclosed, which method is characterized by: providing a light source having decreased intensity portions at a center thereof and on first and second axes defined to intersect with each other at the center and defined along the first and second directions, respectively; and illuminating the pattern with light from the light source.
摘要:
A projection exposure apparatus for projecting a pattern formed on a first object such as a reticle upon a second object such as a semiconductor wafer by use of a projection lens system, is disclosed. In the apparatus, a light of a predetermined wavelength is used for the pattern projection, and a light having a different wavelength is used to align the first and second objects by way of the projection lens system. A dichroic mirror film is disposed inclinedly between the first object and the projection lens system so as to reflect one of the light of the predetermined wavelength and the light of the different wavelength, and also to transmit the other. By this dichroic mirror film, the light used for the alignment and reflected back from the second object is extracted out of a light path between the first and second objects. After correcting effects of chromatic aberrations of the projection lens system with respect to the different wavelength, the light for the alignment is passed through the first object. By this, accurate alignment using the light of a wavelength different from that to be used for the pattern projection, is made practically attainable. Also, use of lights of different wavelengths, other than the wavelength to be used for the pattern projection, is made practically attainable. Thus, accurate and stable alignment is attainable regardless of the configuration of the mark provided on the second object.
摘要:
A surface position detecting method, including the steps of: detecting a surface shape of a first wafer having a pattern formed thereon or a surface shape of a second wafer having a pattern which is substantially of the same structure as that of the pattern of the first wafer; detecting, on the basis of detection of the surface shape, an error which might be caused at the time of detection of a surface position of the first wafer in dependence upon the structure of the pattern thereof; and detecting the surface position of the first wafer while correcting the detected error.
摘要:
A projection exposure apparatus includes a projection optical system for projecting an image of a pattern of a first object to a second object, and an adjusting system for adjusting projection magnification and distortion of the projected image of the pattern, the adjusting system being operable to displace the first object and a lens element of the projection optical system in a direction of an optical axis of the projection optical system.
摘要:
An autofocusing system, usable with a projection optical system for projecting a pattern of a first object upon a second object, for positioning the surface of the second object with respect to an imaging plane of the projection optical system is disclosed, wherein the surface of the second object is illuminated; wherein an image of the second object is formed on a predetermined plane by use of the projection optical system; and wherein the interval between the imaging plane of the projection optical system and the surface of the second object with respect to the direction of an optical axis of the projection optical system is adjusted on the basis of the state of the image of the second object formed on the predetermined plane, such that the surface of the second object can be positioned on the imaging plane of the projection optical system.
摘要:
In a detection optical apparatus for an object having an actual circuit pattern that diffracts an incident light and has an alignment pattern, an illumination device having a first aperture for controlling the beam of light, the illumination device adapted to effect a dark-field illumination to the object, and an imaging optical system for forming the image of the object. The imaging optical system has a second aperture located at a position optically conjugate with the first aperture by way of the object, the first and second apertures being not overlapped when the image of the first aperture is formed on the second aperture. The second aperture has such a light blocking area that blocks diffraction light produced when the beam of light passed through the light-transmitting area of the first aperture is incident on the actual circuit pattern. Also, an optical inspection apparatus for optically inspecting articles such as photomasks or wafers, having patterns each formed by linear pattern elements having a certain directional characteristic with respect to plural directions, is disclosed. Among the linear pattern elements, at least those extending in one direction are extracted out and observed in a dark field, and any faults of the pattern such as breaks or the like and any foreign particles adhered to the pattern are detected on the basis of a reduced amount of information as compared with the information concerning the whole pattern.