Abstract:
A highly electroconductive paste for metallizing comprising (a) a high-melting metal powder such as W, Mo, Mo-Mn, Pt, etc., powder, (b) an additive such as MgO, CaO, SiO.sub.2, Al.sub.2 O.sub.3, etc., in an amount of 0.1 to 3 parts by weight per 100 parts by weight of the metal powder, (c) a binding agent, and (d) a solvent can give a highly electroconductive metallized ceramic having strongly bonded metallized layer by coating said paste on an alumina ceramic substrate and firing it.
Abstract translation:一种用于金属化的高导电性糊剂,其包含(a)高熔点金属粉末如W,Mo,Mo-Mn,Pt等粉末,(b)添加剂如MgO,CaO,SiO 2,Al 2 O 3等。 ,相对于每100重量份的金属粉末为0.1〜3重量份,(c)粘合剂,(d)溶剂可以通过涂布所述糊料得到具有强粘合金属化层的高导电性金属化陶瓷 在氧化铝陶瓷基板上并烧制。
Abstract:
A damper element comprises a lead sheet and vibration-proof sheet spirally and alternately wound to provide a spiral, circular configuration with these sheets bonded to each other. This arrangement permits a shearing energy acting upon one and the other surface of the circular configuration to be absorbed by the deformation of the lead sheet and vibration-proof sheet.
Abstract:
A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle θ in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the ±Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle θ; and splitting the wafer along the first and/or second break line.
Abstract:
A signal processor includes a buffer memory for storing the image signal for output as a main image signal; a point setting section for storing a position on a temporal axis of the main image signal as a registration point in response to a given capture command, the main image signal corresponding to the capture command; a playback control section for causing the buffer memory to output an image frame following the registration point in response to a given playback command; a video capture section for generating a registration image based on at least one image frame in a neighborhood of the registration point of the main image signal outputted from the buffer memory, and storing the registration image; and an image superimposing section for superimposing the registration image onto the main image signal for display in a signal screen to generate a composite image signal.
Abstract:
An information processing device discriminates a broadcast format of contents including video contents, discriminates a broadcast format valid during reproduction on the display unit, and when a data format of the contents and a data format of the display unit are different, modifies a decoding speed of the broadcast format of the contents so that a reproduction speed is modified to correspond to the broadcast format in the display unit. A simplified arrangement is obtained with an easy processing. Smooth reproduction is easily obtained by simply sequentially decoding frames of the video contents at a certain reproduction speed.
Abstract:
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Abstract:
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Abstract:
Two or more of striped structures are formed in one chip, and a relaxation oscillation frequency of the first striped structure is greater than a relaxation oscillation frequency of the second striped structure. An RIN value at low output is improved by the first striped structure having a higher relaxation oscillation frequency, and a single transverse mode and reliability at high output are obtained by the second striped structure having a lower relaxation oscillation frequency.
Abstract:
A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.
Abstract:
A signal processor includes a buffer memory for storing the image signal for output as a main image signal; a point setting section for storing a position on a temporal axis of the main image signal as a registration point in response to a given capture command, the main image signal corresponding to the capture command; a playback control section for causing the buffer memory to output an image frame following the registration point in response to a given playback command; a video capture section for generating a registration image based on at least one image frame in a neighborhood of the registration point of the main image signal outputted from the buffer memory, and storing the registration image; and an image superimposing section for superimposing the registration image onto the main image signal for display in a signal screen to generate a composite image signal.