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    Display device
    53.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US09563094B2

    公开(公告)日：2017-02-07

    申请号：US14711275

    申请日：2015-05-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    IPC: G02F1/1368 ,  G02F1/1365 ,  G02F1/1333 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

    CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

    Abstract: A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

    Abstract translation: 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。

    Semiconductor Device
    57.
    发明申请
    Semiconductor Device 有权

    公开(公告)号：US20250015194A1

    公开(公告)日：2025-01-09

    申请号：US18763108

    申请日：2024-07-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tsutomu Murakawa ,  Fumito Isaka ,  Hitoshi Kunitake ,  Yasuhiro Jinbo

    IPC: H01L29/786 ,  H10B12/00

    Abstract: A transistor that can be miniaturized is provided. The semiconductor device includes an oxide semiconductor layer, first to fourth conductive layers, and first to fourth insulating layers. Over the first conductive layer including a depressed portion, the first insulating layer, the second conductive layer, the second insulating layer, and the third conductive layer which include a first opening portion overlapping with the depressed portion are provided in this order. The third insulating layer is in contact with at least the side surface of the second conductive layer in the first opening portion. The oxide semiconductor layer is in contact with the top surface of the third conductive layer and the bottom and side surfaces of the depressed portion, and is in contact with the third insulating layer in the first opening portion. The fourth insulating layer is on an inner side of the oxide semiconductor layer in the first opening portion. The fourth conductive layer is on an inner side of the fourth insulating layer in the first opening portion. In a cross-sectional view, the oxide semiconductor layer includes a region overlapping with the second conductive layer with the third insulating layer therebetween and overlapping with the fourth conductive layer with the fourth insulating layer therebetween.

    Display Device and Manufacturing Method Thereof
    59.
    发明申请
    Display Device and Manufacturing Method Thereof 有权

    公开(公告)号：US20230009750A1

    公开(公告)日：2023-01-12

    申请号：US17856383

    申请日：2022-07-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Ryota Hodo ,  Yasuhiro Jinbo ,  Chisato Kato

    IPC: H01L27/32 ,  H01L51/56

    Abstract: To provide a method of manufacturing a display device capable of high resolution. To provide a display device having both high display quality and high resolution. A first EL layer, a first layer, and a second layer are formed over a first pixel electrode; a second EL layer, a third layer, and a fourth layer are formed over the second pixel electrode; a resin layer covering an end portion of the second layer and an end portion of the fourth layer is formed by applying a photosensitive resin, exposing the photosensitive resin to light, and developing the photosensitive resin; a top surface of the first EL layer and a top surface of the second EL layer are exposed by etching parts of the first layer, the second layer, the third layer, and the fourth layer which are not covered with the resin layer; and a common electrode covering the first EL layer, the second EL layer, and the resin layer are formed. First light containing ultraviolet light is used for the light exposure, and the second layer and the fourth layer contain a material which reflects or absorbs the first light.

    Functional panel, device, and data processor
    60.
    发明授权
    Functional panel, device, and data processor 有权

    公开(公告)号：US11360590B2

    公开(公告)日：2022-06-14

    申请号：US16366315

    申请日：2019-03-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yasuhiro Jinbo ,  Akio Endo

    IPC: G06F1/16 ,  G06F3/041 ,  G06F3/044

    Abstract: A novel functional panel, a novel device, or a novel data processor is provided. A structure in which a first plane, a second plane that is opposite the first plane, and a neutral plane between the first plane and the second plane are provided and a portion of a functional layer having a thickness greater than or equal to half of the thickness of the functional layer is in a region between the first plane and the neutral plane was conceived.

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