公开(公告)号：US10396123B2

公开(公告)日：2019-08-27

申请号：US15660681

申请日：2017-07-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewoo Jeong ,  Stuart S. P. Parkin ,  Mahesh G. Samant

IPC: G11C11/00 ,  H01L27/22 ,  H01F10/16 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  C22C21/00 ,  C22C22/00 ,  B32B15/04

Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.