Abstract:
A data driving circuit receiving an image signal and applying a data signal based on the image signal to a display panel, the data driving circuit includes a signal generator that generates a horizontal scanning identical signal based on the image signal and a load signal instructing an output of the data signal to the display panel; a signal amplifier that alternately converts a polarity of an offset compensation value from positive to negative and amplifies the image signal based on the offset compensation value; and a controller that counts pulses of the horizontal scanning identical signal and controls the signal amplifier to retain the converted polarity of the offset compensation value until a counted reaches a predetermined reference value.
Abstract:
A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.
Abstract:
Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.
Abstract translation:示例性方法可以提供薄膜蚀刻方法。 示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜,形成覆盖Ga-In-Zn-O膜的一部分的掩模层,并且蚀刻Ga-In-Zn-O膜 使用掩模层作为蚀刻阻挡层,其中在蚀刻中使用的蚀刻气体包括氯。 蚀刻气体还可以包括烷烃(C n H 2 H 2n + 2 H 2)和H 2 H 2气体。 氯气可以是例如Cl 2,BCl 3和/或CCl 3,烷烃气体可以是 例如CH 4。
Abstract:
A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of local word lines and adapted to adjusting voltage levels of the plurality of local word lines in response of voltages applied to the main word line and block information. The plurality of section word line drivers include at least one first section word line driver and at least one second section word line driver. The first section word line drivers include pull-down devices while not including pull-up devices.
Abstract:
Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body housing. The apparatus comprises first and second hinge frames mounted in the body housing by means of screws, first and second plates, one or more slide bars, and a coupling unit inserted through the center parts of the first and second hinge frames so that the first and second hinge frames are rotatably coupled with each other while being opposite to each other.
Abstract:
Provided are an anodic bonding structure, a fabricating method thereof, and a method of manufacturing an optical scanner using the same. Provided anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost, wherein the uppermost dielectric and the glass substrate are anodic bonded. Provided method of fabricating an anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost, and an act of anodic bonding the uppermost dielectric with the glass substrate. In the provided structure of depositing the metal layer and the dielectric between the substrate and the glass substrate, the dielectric and the glass substrate or the dielectric and the metal layer are anodic bonded so that a stable performance is attained to manufacture various micro-electromechanical systems (MEMS) devices.