DATA DRIVING CIRCUIT, DISPLAY APPARATUS COMPRISING THE SAME AND CONTROL METHOD THEREOF
    51.
    发明申请
    DATA DRIVING CIRCUIT, DISPLAY APPARATUS COMPRISING THE SAME AND CONTROL METHOD THEREOF 有权
    数据驱动电路,包括其的显示装置及其控制方法

    公开(公告)号:US20090160844A1

    公开(公告)日:2009-06-25

    申请号:US12241523

    申请日:2008-09-30

    CPC classification number: G09G3/3688

    Abstract: A data driving circuit receiving an image signal and applying a data signal based on the image signal to a display panel, the data driving circuit includes a signal generator that generates a horizontal scanning identical signal based on the image signal and a load signal instructing an output of the data signal to the display panel; a signal amplifier that alternately converts a polarity of an offset compensation value from positive to negative and amplifies the image signal based on the offset compensation value; and a controller that counts pulses of the horizontal scanning identical signal and controls the signal amplifier to retain the converted polarity of the offset compensation value until a counted reaches a predetermined reference value.

    Abstract translation: 数据驱动电路,接收图像信号,并将基于图像信号的数据信号施加到显示面板,所述数据驱动电路包括信号发生器,该信号发生器基于图像信号生成水平扫描相同的信号,以及指示输出的负载信号 的数据信号发送到显示面板; 信号放大器,其将偏移补偿值的极性从正负转换为负,并且基于偏移补偿值放大图像信号; 以及控制器,其对所述水平扫描相同信号的脉冲进行计数,并控制所述信号放大器以保持所述偏移补偿值的转换极性,直到计数达到预定参考值。

    Thin film etching method
    53.
    发明申请
    Thin film etching method 有权
    薄膜蚀刻法

    公开(公告)号:US20080166834A1

    公开(公告)日:2008-07-10

    申请号:US11984760

    申请日:2007-11-21

    CPC classification number: H01L29/7869

    Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

    Abstract translation: 示例性方法可以提供薄膜蚀刻方法。 示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜,形成覆盖Ga-In-Zn-O膜的一部分的掩模层,并且蚀刻Ga-In-Zn-O膜 使用掩模层作为蚀刻阻挡层,其中在蚀刻中使用的蚀刻气体包括氯。 蚀刻气体还可以包括烷烃(C n H 2 H 2n + 2 H 2)和H 2 H 2气体。 氯气可以是例如Cl 2,BCl 3和/或CCl 3,烷烃气体可以是 例如CH 4。

    Phase-change random access memory device
    54.
    发明申请
    Phase-change random access memory device 有权
    相变随机存取存储器件

    公开(公告)号:US20070206409A1

    公开(公告)日:2007-09-06

    申请号:US11655160

    申请日:2007-01-19

    CPC classification number: G11C8/14 G11C8/12 G11C13/0004 G11C13/0028

    Abstract: A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of local word lines and adapted to adjusting voltage levels of the plurality of local word lines in response of voltages applied to the main word line and block information. The plurality of section word line drivers include at least one first section word line driver and at least one second section word line driver. The first section word line drivers include pull-down devices while not including pull-up devices.

    Abstract translation: 提供了相变随机存取存储器件。 相变随机存取存储装置包括多个存储块,主字线,多个本地字线和连接在主字线与多个本地字线中的每一个之间的多个部分字线驱动器,以及 适于响应于施加到主字线的电压和块信息来调整多个本地字线的电压电平。 多个部分字线驱动器包括至少一个第一部分字线驱动器和至少一个第二部分字线驱动器。 第一部分字线驱动器包括下拉器件,而不包括上拉器件。

    Anodic bonding structure, fabricating method thereof, and method of manufacturing optical scanner using the same
    56.
    发明申请
    Anodic bonding structure, fabricating method thereof, and method of manufacturing optical scanner using the same 失效
    阳极结合结构及其制造方法以及使用其制造光学扫描器的方法

    公开(公告)号:US20050077633A1

    公开(公告)日:2005-04-14

    申请号:US11004096

    申请日:2004-12-06

    Abstract: Provided are an anodic bonding structure, a fabricating method thereof, and a method of manufacturing an optical scanner using the same. Provided anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost, wherein the uppermost dielectric and the glass substrate are anodic bonded. Provided method of fabricating an anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost, and an act of anodic bonding the uppermost dielectric with the glass substrate. In the provided structure of depositing the metal layer and the dielectric between the substrate and the glass substrate, the dielectric and the glass substrate or the dielectric and the metal layer are anodic bonded so that a stable performance is attained to manufacture various micro-electromechanical systems (MEMS) devices.

    Abstract translation: 本发明提供阳极结合结构及其制造方法,以及使用其制造光学扫描器的方法。 提供了具有衬底和布置在衬底上方的玻璃衬底的阳极结合结构,包括沉积在衬底和玻璃衬底之间的至少一个电介质和至少一个金属层,其中布置有最上层的电介质,其中最上面的电介质和玻璃衬底 阳极结合。 提供一种制造具有布置在基板上方的基板和玻璃基板的阳极结合结构的方法,包括在基板和玻璃基板之间沉积至少一个电介质和至少一个金属层的动作,其中电介质布置在最上面,并且 将最上面的电介质与玻璃基板阳极接合。 在提供的金属层和电介质在基板和玻璃基板之间沉积的结构中,电介质和玻璃基板或电介质和金属层被阳极接合,从而获得稳定的性能来制造各种微机电系统 (MEMS)器件。

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