公开(公告)号：US20110101402A1

公开(公告)日：2011-05-05

申请号：US13000592

申请日：2009-06-10

申请人： Jun-Ying Zhang ,  Terry L. Smith ,  Michael A. Haase

发明人： Jun-Ying Zhang ,  Terry L. Smith ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L33/08 ,  H01L33/44 ,  H01L2933/0091

摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.

摘要翻译： 公开了半导体光转换结构。 半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。 结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。 半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。 外涂层具有大于第二折射率的第三折射率。

公开(公告)号：US07935637B2

公开(公告)日：2011-05-03

申请号：US11839934

申请日：2007-08-16

申请人： Nicholas C. M. Fuller ,  Sivananda Kanakasabapathy ,  Ying Zhang

发明人： Nicholas C. M. Fuller ,  Sivananda Kanakasabapathy ,  Ying Zhang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31133 ,  H01L21/31058 ,  H01L21/31138

摘要： A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated resist layer. Optionally, the backfilling material layer may be surface treated similarly to the surface treated resist layer. Under such circumstances: (1) surface portions of the backfilling material layer and resist layer; and (2) remaining portions of the backfilling material layer and resist layer, may be sequentially stripped using a two step etch method, such as a two step plasma etch method. Alternatively, a surface portion of the surface treated resist layer only may be stripped while using a first etch method, and the remaining portions of the resist layer and backfilling material layer may be planarized prior to being simultaneously stripped while using a second etch method.

摘要翻译： 用于制造微电子结构的方法提供了形成位于衬底上方的至少侧向邻近且优选地横向邻接的抗蚀剂层的回填材料层。 优选地，抗蚀剂层包括表面处理的抗蚀剂层。 任选地，回填材料层可以与表面处理的抗蚀剂层类似地进行表面处理。 在这种情况下：（1）回填材料层和抗蚀剂层的表面部分; 和（2）回填材料层和抗蚀剂层的剩余部分可以使用两步蚀刻方法，例如两步等离子体蚀刻方法来顺序剥离。 或者，仅使用第一蚀刻方法剥离表面处理的抗蚀剂层的表面部分，并且可以在使用第二蚀刻方法同时剥离之前将抗蚀剂层和回填材料层的其余部分平坦化。

公开(公告)号：US07902128B2

公开(公告)日：2011-03-08

申请号：US12111429

申请日：2008-04-29

申请人： Ying Zhang ,  Gregory P. Perez

发明人： Ying Zhang ,  Gregory P. Perez

IPC分类号： C09K8/588 ,  C09K8/68 ,  C09K8/528 ,  E21B43/00 ,  C04B28/02

CPC分类号： C09K8/36 ,  C09K8/82 ,  Y10S507/937

摘要： Methods and compositions are provided that include a water-in-oil composition comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets and a method comprising providing a water-in-oil emulsion comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets; and placing the water-in-oil emulsion in a well bore penetrating a subterranean formation. Additional methods are also provided.

摘要翻译： 提供了包括油包油组合物的方法和组合物，其包含油基连续相和包含至少多个水凝胶液滴的不连续相，以及包括提供包含油 - 基于连续相和包含至少多个水凝胶液滴的不连续相; 并将油包水乳剂置于穿透地层的井眼中。 还提供了附加的方法。

公开(公告)号：US07867952B2

公开(公告)日：2011-01-11

申请号：US12001956

申请日：2007-12-12

申请人： Pingmei Wang ,  Jianhui Luo ,  Yuzhang Liu ,  Huaijiang Zhu ,  Chunming Xiong ,  Qiang Liu ,  Ruyi Jiang ,  Yikun Li ,  Ying Zhang

发明人： Pingmei Wang ,  Jianhui Luo ,  Yuzhang Liu ,  Huaijiang Zhu ,  Chunming Xiong ,  Qiang Liu ,  Ruyi Jiang ,  Yikun Li ,  Ying Zhang

IPC分类号： C07C43/00

CPC分类号： C09K8/516 ,  C08F222/26 ,  C08F236/10 ,  C09K2208/18

摘要： Disclosed are a flexible polymer, particles made from same, and a process for preparing the particles. This flexible polymer is obtained from copolymerizing monomer (A) and monomer (B), wherein monomer (A) is one or more water-insoluble unsaturated diene monomers; monomer (B) is at least one compound with the general formula of wherein R is C1-C12alkyl, C1-C12 alkyl aryl, C1-C12 alkyl ether or C1-C12alkyl ester. Monomer (A) is in an amount of 60-90% by weight of the total combined weight of monomer (A) and monomer (B). Monomer (B) is in an amount of 10-40% by weight of the total combined weight of monomer (A) and monomer (B). The flexible polymer particles show excellent flexibility, deformability, elasticity as well as stability. They can be used in oilfields in nearby wellbore profile control and in-depth profile control or as in-depth flooding fluid diverting agents. They can also be applied in water shutoff in high temperature and high salinity production wells; preventing chemical channeling in polymer and ASP (alkali-surfactant-polymer) flooding; temporarily plugging in acidization; huff and puff; and preventing in-depth channeling in steam flooding, loss of circulation control and filtration control, and the like.

摘要翻译： 公开了柔性聚合物，由其制成的颗粒和制备颗粒的方法。 该柔性聚合物由共聚单体（A）和单体（B）得到，其中单体（A）为一种或多种水不溶性不饱和二烯单体; 单体（B）是至少一种具有通式的化合物，其中R是C 1 -C 12烷基，C 1 -C 12烷基芳基，C 1 -C 12烷基醚或C 1 -C 12烷基酯。 单体（A）的单体（A）和单体（B）的总组合重量的60-90重量％。 单体（B）的单体（A）和单体（B）的总组合重量的量为10-40重量％。 柔性聚合物颗粒显示出优异的柔韧性，变形性，弹性以及稳定性。 它们可用于油田附近的井筒剖面控制和深度剖面控制，或用作深度淹没液体转向剂。 也可应用于高温高盐生产井的关闭水中; 防止聚合物和ASP（碱 - 表面活性剂 - 聚合物）淹水中的化学通道; 暂时酸化; 气喘吁吁; 并防止蒸汽溢流的深入沟通，流通控制和过滤控制的损失等。

公开(公告)号：US20100316677A1

公开(公告)日：2010-12-16

申请号：US10558130

申请日：2004-05-24

申请人： Ying Zhang ,  Xiaoqin Wu ,  Yonghua Zhang ,  Huafang Cai ,  Boyi Lu

发明人： Ying Zhang ,  Xiaoqin Wu ,  Yonghua Zhang ,  Huafang Cai ,  Boyi Lu

IPC分类号： A61K9/00 ,  A61K36/899

CPC分类号： A61K36/899 ,  A61K31/352

摘要： This invention discloses the new uses of Lophatherum Total Flavones in medical, pharmaceutical, and healthcare fields. Lophatherum Total Flavones have effects of anti-bacteria, inhibiting bacteria, anti-inflammation, anti-prostatic hyperplasia, anti-platelet aggregation, anti-tumor, and promotion of immunity, etc., with safety and without toxicity, suitable for chronic oral administration, and especially suitable for prevention and treatment of senile chronic degenerative diseases; Lophatherum Total Flavones may be used in fields of pharmaceutical and foods, as a natural drug for prevention and treatment of prostatitis, prostatic hyperplasia, and prostate cancer, or as a dietary supplement.

摘要翻译： 本发明公开了Lophatherum总黄酮在医药，医药和保健领域的新用途。 枸杞总黄酮具有抗菌，抑菌，抗炎，抗前列腺增生，抗血小板聚集，抗肿瘤，促进免疫等功效，安全无毒，适合慢性口服 特别适用于老年慢性退行性疾病的预防和治疗; Lophatherum总黄酮可用于制药和食品领域，作为预防和治疗前列腺炎，前列腺增生和前列腺癌的天然药物，或作为膳食补充剂。

公开(公告)号：US07826145B2

公开(公告)日：2010-11-02

申请号：US11577905

申请日：2005-11-04

申请人： Nicole B. Justis ,  De-Ying Zhang ,  Yu-Hwa Lo

发明人： Nicole B. Justis ,  De-Ying Zhang ,  Yu-Hwa Lo

IPC分类号： G02B3/12 ,  G02B7/02

CPC分类号： G02B26/005 ,  G02B3/14

摘要： The present invention in various embodiments relates to a variety of different types of fluidic adaptive lens systems, pumping systems for implementation in such lens systems, other systems employing such lens systems, and related methods of fabrication. In at least some embodiments, the present invention relates to a lens system that includes a reservoir having at least one flexible wall, a first actuator coupled in relation to the reservoir, and a terminal at which is located at least one of an integrated fluidic lens and a port configured to be coupled to an external fluidic lens. The terminal is coupled to at least one of the reservoir and the actuator, and at least one of the actuator and a first pumping system including the actuator is capable of causing fluid to be moved at least one of from the reservoir toward the terminal, and from the terminal toward the reservoir.

摘要翻译： 各种实施例中的本发明涉及各种不同类型的流体自适应透镜系统，用于在这种透镜系统中实现的泵送系统，使用这种透镜系统的其它系统以及相关的制造方法。 在至少一些实施例中，本发明涉及一种透镜系统，其包括具有至少一个柔性壁的储存器，相对于储存器联接的第一致动器，以及位于集成流体透镜 以及配置为联接到外部流体透镜的端口。 所述端子联接到所述储存器和所述致动器中的至少一个，并且所述致动器和包括所述致动器的第一泵送系统中的至少一个能够使流体从所述储存器中的至少一个向所述端子移动，以及 从码头到水库。

公开(公告)号：US07820552B2

公开(公告)日：2010-10-26

申请号：US11685558

申请日：2007-03-13

申请人： Siva Kanakasabapathy ,  Ying Zhang ,  Edmund M. Sikorski ,  Hongwen Yan ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Bruce B. Doris

发明人： Siva Kanakasabapathy ,  Ying Zhang ,  Edmund M. Sikorski ,  Hongwen Yan ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Bruce B. Doris

IPC分类号： H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/28088 ,  H01L21/31144 ,  H01L21/31645 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/045 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： An advanced method of patterning a gate stack including a high-k gate dielectric that is capped with a high-k gate dielectric capping layer such as, for example, a rare earth metal (or rare earth like)-containing layer is provided. In particular, the present invention provides a method in which a combination of wet and dry etching is used in patterning such gate stacks which substantially reduces the amount of remnant high-k gate dielectric capping material remaining on the surface of a semiconductor substrate to a value that is less than 1010 atoms/cm2, preferably less than about 109 atoms/cm2.

摘要翻译： 提供了一种构图栅极堆叠的先进方法，该栅极堆叠包括用例如含有稀土金属（或稀土类））层的高k栅介质覆盖层封盖的高k栅极电介质。 特别地，本发明提供了一种方法，其中使用湿蚀刻和干蚀刻的组合来构图这样的栅极堆叠，其将残留在半导体衬底的表面上的剩余的高k栅极电介质封盖材料的量基本上减小到值 小于10 10原子/ cm 2，优选小于约10 9原子/ cm 2。

公开(公告)号：US07811997B2

公开(公告)日：2010-10-12

申请号：US10538463

申请日：2003-04-28

申请人： Ying Zhang ,  Xiaoqin Wu ,  Zhuoyu Yu ,  Yunlong Zhu ,  Lingen Chen ,  Shenggen Lou

发明人： Ying Zhang ,  Xiaoqin Wu ,  Zhuoyu Yu ,  Yunlong Zhu ,  Lingen Chen ,  Shenggen Lou

IPC分类号： A01N45/00 ,  A61K31/704 ,  A61K36/899 ,  C07H15/24

CPC分类号： A61K36/899 ,  A61K31/704 ,  B01D11/0203 ,  B01D11/0288

摘要： The invention relates to a composition containing total triterpenoid sapogenins extracted from bamboo, the preparation method and use thereof. These total triterpenoid sapogenins are extracted from many parts of bamboo such as bamboo shavings in Gramineae by CO2 Supercritical Fluid Extraction technique. In the extract, the content of total triterpenoid sapogenins is 10-90%, while the contents of friedelin and lupenone are 5-35% and 1-10%, respectively. The extract in the invention has good physiological and pharmacological activities such as anti-free radical, anti-oxidation, anti-tumor and anti-hypertension. It can be used in medicines or functional foods for the treatment or prevention of cardiovascular and cerebrovascular diseases and tumor. It is also useful in cosmetics field.

摘要翻译： 本发明涉及一种含有从竹提取的总三萜皂苷元的组合物，其制备方法和用途。 这些总三萜皂甙元通过二氧化碳超临界流体萃取技术从禾本科的竹叶等多种部分中提取出来。 在提取物中，三萜皂甙元总含量为10-90％，而脂蛋白和鲁蛋白含量分别为5-35％和1-10％。 本发明提取物具有抗自由基，抗氧化，抗肿瘤，抗高血压等良好的生理，药理活性。 可用于药物或功能性食品，用于治疗或预防心血管和脑血管疾病和肿瘤。 在化妆品领域也很有用。

公开(公告)号：US20100244864A1

公开(公告)日：2010-09-30

申请号：US12584668

申请日：2009-09-09

申请人： Lin Xiao ,  Yu-Ying Zhang ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

发明人： Lin Xiao ,  Yu-Ying Zhang ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

IPC分类号： G01R27/08

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01R21/04 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/833 ,  Y10S977/932 ,  Y10S977/954

摘要： A method for detecting an electromagnetic wave includes: providing a carbon nanotube structure including a plurality of carbon nanotubes arranged along a same direction. The carbon nanotube structure is irradiated by an electromagnetic wave to be measured. The resistance of the carbon nanotube structure irradiated by the electromagnetic wave is measured.

摘要翻译： 检测电磁波的方法包括：提供包括沿相同方向布置的多个碳纳米管的碳纳米管结构。 碳纳米管结构被测量的电磁波照射。 测量由电磁波照射的碳纳米管结构的电阻。

公开(公告)号：US07785944B2

公开(公告)日：2010-08-31

申请号：US12077973

申请日：2008-03-24

申请人： Huilong Zhu ,  Bruce B. Doris ,  Xinlin Wang ,  Jochen Beintner ,  Ying Zhang ,  Philip J. Oldiges

发明人： Huilong Zhu ,  Bruce B. Doris ,  Xinlin Wang ,  Jochen Beintner ,  Ying Zhang ,  Philip J. Oldiges

IPC分类号： H01L21/84

CPC分类号： H01L29/785 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856

摘要： A method is provided of making a gated semiconductor device. Such method can include patterning a single-crystal semiconductor region of a substrate to extend in a lateral direction parallel to a major surface of a substrate and to extend in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the semiconductor region having a first side and a second side opposite, e.g., remote from the first side. A first gate may be formed overlying the first side, the first gate having a first gate length in the lateral direction. A second gate may be formed overlying the second side, the second gate having a second gate length in the lateral direction which is different from the first gate length. In one embodiment, the second gate length may be shorter than the first gate length. In one embodiment, the first gate may consist essentially of polycrystalline silicon germanium and the second gate may consist essentially of polysilicon.

摘要翻译： 提供了一种制造门控半导体器件的方法。 这种方法可以包括图案化衬底的单晶半导体区域，以在与衬底的主表面平行的横向方向上延伸并且沿至少基本上垂直且至少基本垂直于主表面的方向延伸，半导体 区域具有第一侧和第二侧，例如远离第一侧。 第一栅极可以形成在第一侧上，第一栅极在横向上具有第一栅极长度。 第二栅极可以形成在第二侧上，第二栅极在横向上具有与第一栅极长度不同的第二栅极长度。 在一个实施例中，第二栅极长度可以比​​第一栅极长度短。 在一个实施例中，第一栅极可以主要由多晶硅锗组成，第二栅极可以由多晶硅组成。