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    Process for forming a photoresist pattern by top surface imaging process
    51.
    发明授权
    Process for forming a photoresist pattern by top surface imaging process 失效
    通过顶表面成像工艺形成光致抗蚀剂图案的工艺

    公开(公告)号：US06319654B1

    公开(公告)日：2001-11-20

    申请号：US09566290

    申请日：2000-05-05

    申请人： Myoung Soo Kim ,  Jae Chang Jung ,  Hyung Gi Kim ,  Ki Ho Baik

    发明人： Myoung Soo Kim ,  Jae Chang Jung ,  Hyung Gi Kim ,  Ki Ho Baik

    IPC分类号： G03F740

    CPC分类号： G03F7/38 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/265 ,  Y10S430/168

    摘要： The present invention relates to a process for forming a photoresist pattern by employing a silylation process, and particularly to a method for forming a photoresist pattern according to a top surface imaging (TSI) process using a photoresist composition comprising a cross-linker having a cross-linker monomer of the following Chemical Formula 1 or 2. The photoresist composition containing a polymer of the above cross-linker monomer is preferably used in a TSI process which has been optimized by controlling the conditions of each step, such as temperature and time, thereby obtaining an ultrafine pattern that can be more efficiently applied to a 4 G or 16 G DRAM semiconductor fabrication process: wherein, R1, R2, R3, R5, R6, R7, R, m and n are as defined in the specification attached hereto.

    摘要翻译： 本发明涉及一种通过使用甲硅烷化方法形成光致抗蚀剂图案的方法，特别涉及一种使用光致抗蚀剂组合物的顶表面成像（TSI）方法形成光致抗蚀剂图案的方法，所述光致抗蚀剂组合物包含交联剂 含有上述交联剂单体的聚合物的光致抗蚀剂组合物优选用于通过控制各步骤的条件如温度和时间而优化的TSI方法， 从而获得可以更有效地应用于4G或16G DRAM半导体制造工艺的超精细图案：其中，R1，R2，R3，R5，R6，R7，R，m和n如本文所附的说明书中所定义。 。

    Photoresist cross-linker and photoresist composition comprising the same
    52.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06312868B1

    公开(公告)日：2001-11-06

    申请号：US09501096

    申请日：2000-02-09

    申请人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/038

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮 包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或 包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括 至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

    Method for forming photoresist pattern
    55.
    发明授权
    Method for forming photoresist pattern 失效
    光刻胶图案形成方法

    公开(公告)号：US5759748A

    公开(公告)日：1998-06-02

    申请号：US816479

    申请日：1997-03-13

    申请人： Jun Sung Chun ,  Yong Suk Lee ,  Ki Ho Baik

    发明人： Jun Sung Chun ,  Yong Suk Lee ,  Ki Ho Baik

    IPC分类号： G03F7/004 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/095 ,  G03F7/26 ,  G03F7/32 ,  G03F7/36 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/405 ,  G03F7/0755 ,  G03F7/095 ,  G03F7/32

    摘要： A method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with the oxide films serving as a mask. Exposure of the silicon monomer generates protons from the chemically enhanced photoresist film which trigger the polymerization of the silicon monomer. The polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO.sub.2) is formed on the silicon contained polymer.

    摘要翻译： 一种形成光致抗蚀剂图案的方法，包括以下步骤：在下层上涂覆化学增强的光致抗蚀剂膜; 在化学增强的光致抗蚀剂膜上形成硅单体层; 使单体层通过掩模曝光，以选择性聚合硅单体; 通过显影去除单体层的未曝光区域; 并且使剩余的聚合区域进行氧等离子体显影处理，以通过氧与聚合区域中所含的硅的反应形成氧化物膜，并且通过选择性蚀刻光致抗蚀剂膜形成光刻胶图案，其中氧化物膜用作掩模。 硅单体的曝光从化学增强的光致抗蚀剂膜产生质子，其触发硅单体的聚合。 这样形成的聚合物不会被典型的显影液除去，并且在用氧等离子体蚀刻光致抗蚀剂膜时用作掩模，因为在含硅聚合物上形成薄的氧化硅（SiO 2）。

    Additive for photoresist composition for resist flow process
    57.
    发明授权
    Additive for photoresist composition for resist flow process 失效
    光刻胶组合物用于抗蚀剂流程的添加剂

    公开(公告)号：US06770414B2

    公开(公告)日：2004-08-03

    申请号：US09878803

    申请日：2001-06-11

    申请人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F700

    CPC分类号： G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

    摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

    摘要翻译： 本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。 将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。 结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

    Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and methods of preparation thereof
    59.
    发明授权
    Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and methods of preparation thereof 有权
    有机抗反射涂层聚合物，包含其的抗反射涂料组合物及其制备方法

    公开(公告)号：US06602650B2

    公开(公告)日：2003-08-05

    申请号：US10099295

    申请日：2002-03-13

    申请人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

    发明人： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

    IPC分类号： G03C176

    CPC分类号： C08F220/36 ,  C07C251/54 ,  C08F220/40 ,  G03F7/091 ,  Y10S430/111 ,  C08F2220/281 ,  C08F216/38

    摘要： A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value

    摘要翻译： 式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。 包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。 包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和 来自这种较低层的反射光。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。 此外，还可以控制k值