OLED display and manufacturing method thereof

    公开(公告)号:US10050230B1

    公开(公告)日:2018-08-14

    申请号:US15328897

    申请日:2016-12-15

    Abstract: The present invention provides an OLED display and a manufacturing method thereof. The OLED display of the present invention is such that in a thin film encapsulation layer, an inorganic passivation that is located under and adjacent to each organic buffer layer forms a stepped zone at a portion between an outer edge of the organic buffer layer and an outer edge of the inorganic passivation layer and each stepped zone is provided with a DLC layer that covers the stepped zone. In other words, the present invention uses DLC for later side encapsulation and in the thin film encapsulation layer, each organic buffer layer is provided, on an outer side thereof, with a DLC layer to thereby effectively block external moisture and oxygen from attacking the OLED device from a lateral side and also to eliminate an issue of loss for light of a top emission device to travel through DLC.

    Gate driving circuit on array substrate and liquid crystal display (LCD) using the same

    公开(公告)号:US10043474B2

    公开(公告)日:2018-08-07

    申请号:US14916343

    申请日:2016-02-24

    Inventor: Mang Zhao Yafeng Li

    Abstract: A gate driving circuit disposed on an array substrate and an LCD using the same are described. The gate driving circuit on the array substrate comprises a plurality of sequentially connected gate driving units. The gate driving circuit unit comprises an input module, a reset module, a latch module and a signal processing module. The signal processing module receives the current inverse stage-transmitting signal XQ(N), the low voltage signal, a second clock signal and a third clock signal to control on/off statuses of two transistors by the current stage-transmitting signal Q(N) so that the two transistors forms Nth gate signal G(N) and gate signal (N+1)th based on the second clock signal and the third clock signal. The present invention utilizes less clock signals and transistors, which is favorable to the narrower LCD's frame design and solves the problem of manufacturing process restriction of the LCD panel.

    FLEXIBLE VERTICAL CHANNEL ORGANIC THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF

    公开(公告)号:US20180219055A1

    公开(公告)日:2018-08-02

    申请号:US15506239

    申请日:2016-12-29

    Abstract: Provided is a flexible vertical channel organic thin film transistor and a manufacture method thereof, which change the traditional configuration of the horizontal channel organic TFT and use the vertical channel configuration to tremendously shorten the channel length so that the TFT can obtain the larger source-drain current under the lower drive voltage; by using the flawless, high conductive and high transparent graphene material to manufacture the gate, the electronic performance of the TFT can be better; by using the hexagonal boron nitride material to manufacture the gate insulation layer to interact with the gate made by graphene, the electronic performance of the TFT can be promoted; because both the graphene and the hexagonal boron nitride materials are two dimension atomic layer structure material with better bendability and the channel layer uses the flexible organic semiconductor layer, the bendability of the entire TFT can be significantly promoted.

    GOA CIRCUIT
    539.
    发明申请
    GOA CIRCUIT 审中-公开

    公开(公告)号:US20180218682A1

    公开(公告)日:2018-08-02

    申请号:US15506241

    申请日:2016-12-30

    Inventor: Yafeng Li

    Abstract: The present invention relates to a GOA circuit. The GOA circuit of the present invention comprises a plurality of GOA circuit units which are cascade coupled, wherein n is set to be a natural number larger than 0, and the nth level GOA circuit unit comprises: a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a fourth thin film transistor (T4), a fifth thin film transistor (T5), a sixth thin film transistor (T6), a seventh thin film transistor (T7), an eighth thin film transistor (T8), a ninth thin film transistor (T9), a tenth thin film transistor (T10), a first capacitor (C1) and a second capacitor (C2). Moreover, two control signals (Select1, Select2) are introduced. The present invention provides a new GOA circuit. The circuit possesses MLG function, which can effectively reduce the feedthrough and improve the Vcom uniformity in the panel to promote the quality of the image display.

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