公开(公告)号：US20180219055A1

公开(公告)日：2018-08-02

申请号：US15506239

申请日：2016-12-29

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Chenghao Bu ,  Guoren Hu

IPC: H01L27/32 ,  H01L51/10 ,  H01L51/05 ,  H01L51/52

Abstract: Provided is a flexible vertical channel organic thin film transistor and a manufacture method thereof, which change the traditional configuration of the horizontal channel organic TFT and use the vertical channel configuration to tremendously shorten the channel length so that the TFT can obtain the larger source-drain current under the lower drive voltage; by using the flawless, high conductive and high transparent graphene material to manufacture the gate, the electronic performance of the TFT can be better; by using the hexagonal boron nitride material to manufacture the gate insulation layer to interact with the gate made by graphene, the electronic performance of the TFT can be promoted; because both the graphene and the hexagonal boron nitride materials are two dimension atomic layer structure material with better bendability and the channel layer uses the flexible organic semiconductor layer, the bendability of the entire TFT can be significantly promoted.