公开(公告)号：US20040188609A1

公开(公告)日：2004-09-30

申请号：US10669253

申请日：2003-09-25

Inventor： Hiroshi Miyai ,  Ryuichi Funatsu ,  Taku Ninomiya ,  Yasuhiko Nara

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/2817

Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.

Abstract translation: 检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。 基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。 从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。 因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

公开(公告)号：US20040183015A1

公开(公告)日：2004-09-23

申请号：US10802982

申请日：2004-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Sung Kim ,  Seok-Hwan Oh

IPC: H01J037/28 ,  G01N023/225

CPC classification number: G01N23/2251 ,  H01J37/28 ,  H01J2237/24495 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2814

Abstract: A method for measuring dimensions of minute structures on a substrate include irradiating primary electrons onto the minute structures, and detecting secondary electrons generated from the minute structures. Image data of the minute structures is formed, and at least two measuring regions are determined over the minute structures using the image data. The dimensions of the minute structures corresponding to the measuring regions are calculated. The primary electrons are provided from an electron emission member to the minute structures, and the secondary electrons are converted into current signals and then imaged in a displaying member. An operation member calculates the dimensions of the minute structures corresponding to the measuring regions using the image data of the minute structures stored in a storage member and measurement data that is measured at the measuring regions.

Abstract translation: 用于测量衬底上微小结构的尺寸的方法包括将一次电子照射到微结构上，以及检测由微小结构产生的二次电子。 形成微小结构的图像数据，并且使用图像数据在分辨率结构上确定至少两个测量区域。 计算对应于测量区域的微小结构的尺寸。 一次电子从电子发射部件提供到微小结构，二次电子被转换为电流信号，然后在显示部件中成像。 操作部件使用存储在存储部件中的微小结构的图像数据和在测量区域测量的测量数据来计算与测量区域对应的微小结构的尺寸。

公开(公告)号：US20040183014A1

公开(公告)日：2004-09-23

申请号：US10801874

申请日：2004-03-16

Applicant: JEOL Ltd.

Inventor： Toru Kagawa

IPC: H01J037/28

CPC classification number: H01J37/20 ,  H01J37/28 ,  H01J2237/153 ,  H01J2237/2814

Abstract: A scanning electron microscope has an electron gun for producing an electron beam, a specimen holder holding the specimen, an objective lens for sharply focusing the beam onto the specimen, and a power supply for applying a negative voltage to the specimen. A shielding plate made of a conductive material and having at least one hole for limiting the region of the specimen surface illuminated by the beam is mounted on the holder. A voltage almost equal to the voltage applied to the specimen is applied to the shielding plate.

Abstract translation: 扫描电子显微镜具有用于产生电子束的电子枪，保持样本的样本架，用于将光束聚焦到样本上的物镜和用于向样本施加负电压的电源。 由导电材料制成并具有至少一个用于限制由梁照射的试样表面的区域的孔的屏蔽板安装在支架上。 将几乎等于施加到试样的电压的电压施加到屏蔽板。

公开(公告)号：US20040173746A1

公开(公告)日：2004-09-09

申请号：US10382789

申请日：2003-03-05

Applicant: Applied Materials Israel Ltd

Inventor： Igor Petrov ,  Zvika Rosenberg ,  Pavel Adamec ,  Igor Krayvitz

IPC: H01J037/28 ,  G01N023/225

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J2237/20207

Abstract: A method and apparatus for use in monitoring a sample with a charged particle beam are presented. A mechanical displacement between a plane defined by the sample's surface and an optical axis defined by a beam directing arrangement is provided so as to orient the sample at a certain non-right angle null1 with respect to the optical axis. A primary charged particle beam propagating towards the sample is deflected so as to affect the trajectory of the primary charged particle beam to provide a certain non-zero angle null2 between the primary beam propagation axis and said optical axis.

Abstract translation: 提出了一种用于监测带有带电粒子束的样品的方法和装置。 提供了由样品表面限定的平面与由光束引导装置限定的光轴之间的机械位移，以使样品相对于光轴以一定的非直角θ1定向。 向样品传播的初级带电粒子束被偏转，以影响初级带电粒子束的轨迹，以在主光束传播轴和所述光轴之间提供一定的非零角度θ2。

公开(公告)号：US20040149906A1

公开(公告)日：2004-08-05

申请号：US10600050

申请日：2003-06-20

Inventor： Marian Mankos ,  David L. Adler

IPC: H01J037/28 ,  G01N023/203

CPC classification number: H01J37/20 ,  H01J2237/153 ,  Y10T428/12528

Abstract: One embodiment disclosed pertains to a method for inspecting a substrate. The method includes inserting the substrate into a holding place of a substrate holder, moving the substrate holder under an electron beam, and applying a voltage to a conductive element of the substrate holder. The voltage applied to the conductive element reduces a substrate edge effect. Another embodiment disclosed relates to an apparatus for holding a substrate that reduces a substrate edge effect. The apparatus includes a holding place for insertion of the substrate and a conductive element. The conductive element is positioned so as to be located within a gap between an edge of the holding place and an edge of the substrate.

Abstract translation: 所公开的一个实施例涉及用于检查基板的方法。 该方法包括将基板插入基板保持器的保持位置，将基板保持器移动到电子束下方，并向基板保持器的导电元件施加电压。 施加到导电元件的电压降低了衬底边缘效应。 公开的另一实施例涉及一种用于保持降低衬底边缘效应的衬底的装置。 该装置包括用于插入基板和导电元件的保持位置。 导电元件被定位成位于保持位置的边缘和基板的边缘之间的间隙内。

公开(公告)号：US20040079883A1

公开(公告)日：2004-04-29

申请号：US10686792

申请日：2003-10-16

Inventor： Takayuki Sugiura ,  Hideki Nasuno

IPC: H01J037/28 ,  G01N023/203

CPC classification number: G01N23/203 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2817

Abstract: An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.

Abstract translation: 一种将电子束照射到物体上以容易地检测背散射电子检测器的缺陷的电子束照射装置，包括：用于产生电子束的电子束产生部分; 多个背散射电子检测器，用于检测当电子束照射在标记上时产生的反向散射电子; 多个衰减部分，用于衰减由多个后向散射电子检测器检测到的反向散射电子量的信号值; 以及缺陷检测部分，用于基于由多个衰减部分衰减的信号值来检测多个后向散射电子检测器的缺陷，其中多个衰减部分的衰减因子是变化的。

公开(公告)号：US20040021076A1

公开(公告)日：2004-02-05

申请号：US10434977

申请日：2003-05-09

Applicant: Applied Materials Israel Ltd

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: H01J037/28

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US20030230713A1

公开(公告)日：2003-12-18

申请号：US10389907

申请日：2003-03-18

Inventor： Ute Golla-Schindler ,  Bernd Schindler

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/0458

Abstract: The invention relates to a raster electron microscope having a specimen chamber and a detector for electrons mounted in the specimen chamber. The raster electron microscope also includes a specimen table having a specimen holder and the specimen table is mounted in the specimen chamber. A diaphragm system is provided on the specimen table and has a diaphragm between the specimen holder and the detector. The diaphragm system is adjustable relative to the specimen holder. The invention can be configured especially as an ancillary module which is accommodated on the specimen table of a conventional raster electron microscope. The system of raster electron microscope and ancillary unit serves for generating special contrastings, especially a dark-field contrast in transmission.

Abstract translation: 本发明涉及一种光栅电子显微镜，其具有安装在样品室中的电子检体室和检测器。 光栅电子显微镜还包括具有样品保持器的样品台，样品台安装在样品室中。 在试样台上设置有隔膜系统，在试样架和检测器之间具有隔膜。 隔膜系统相对于试样架可调。 本发明可以特别地构成为容纳在常规光栅电子显微镜的样品台上的辅助模块。 光栅电子显微镜和辅助单元的系统用于产生特殊的对比度，特别是传输中的暗场对比度。

公开(公告)号：US20030193024A1

公开(公告)日：2003-10-16

申请号：US10395263

申请日：2003-03-25

Applicant: Keyence Corporation

Inventor： Shigenori Takagi

IPC: H01J037/28 ,  G01N023/225

CPC classification number: H01J37/28 ,  H01J37/026

Abstract: Eliminating electricity of the specimen is performed by applying an acceleration voltage to an electron gun and applying primary electrons to a charged-up specimen from the electron gun. The maximum value of the acceleration voltages of the primary electrons applied in the past is adopted as electricity elimination start acceleration voltage. The acceleration voltage is gradually dropped from the electricity elimination start voltage so as to emit electrons charged on the specimen. The acceleration voltage is applied continuously until the specimen charged negatively becomes uncharged or is charged positively. A plurality of specimens are previously compared with respect to the acceleration voltage at which the secondary electron emission efficiency becomes 1 and electricity elimination termination voltage at which dropping the acceleration voltage is terminated is set to the minimum acceleration voltage or less.

Abstract translation: 通过向电子枪施加加速电压并将电子从电子枪向带电的样品施加一次电子来进行取样。 采用过去施加的一次电子的加速电压的最大值作为消电开始加速电压。 加速电压从消电开始电压逐渐下降，以发射充电在试样上的电子。 连续施加加速电压，直到带负电的样品变得不充电或带正电。 预先将多个试样与二次电子发射效率变为1的加速电压进行比较，将加速电压下降的消电终止电压设定为最小加速电压以下。

公开(公告)号：US20030189172A1

公开(公告)日：2003-10-09

申请号：US10406455

申请日：2003-04-04

Applicant: HITACHI, LTD.

Inventor： Tetsuya Sawahata ,  Mitsugu Sato

IPC: H01J037/28 ,  G01N023/225

CPC classification number: H01J37/256 ,  G01N23/2252 ,  H01J37/141 ,  H01J2237/2561

Abstract: According to the present invention, there are newly provided in a scanning electron microscope with an in-lens system a first low-magnification mode that sets the current of the object lens to be zero or in a weak excitation state, and a second low-magnification mode that sets the current of the object lens to be a value that changes in proportion to the square root of the accelerating voltage. The scanning electron microscope has a configuration wherein normal sample image (secondary electron image) observation is performed in the first low-magnification mode, and it switches the first low-magnification mode to the second low-magnification mode when X-ray analysis is performed. As a result, both sample image (secondary electron image) observation and X-ray analysis can be performed in low-magnification mode.

Abstract translation: 根据本发明，在具有透镜系统的扫描电子显微镜中，新提供将物镜的电流设定为零或弱激励状态的第一低倍率模式， 将物镜的电流设定为与加速电压的平方根成比例地变化的值的倍率模式。 扫描电子显微镜具有在第一低倍率模式下进行正常的样本图像（二次电子图像）观察的结构，并且当执行X射线分析时，将第一低倍率模式切换到第二低倍率模式 。 结果，可以以低倍率模式进行样本图像（二次电子图像）观察和X射线分析。