公开(公告)号：US20230220553A1

公开(公告)日：2023-07-13

申请号：US18009675

申请日：2021-06-16

申请人： AIXTRON SE

发明人： Markus JAKOB ,  Andy EICHLER

IPC分类号： C23C16/52 ,  C23C14/12 ,  B01D1/00 ,  B01D1/14 ,  C23C14/24 ,  C23C14/54 ,  C23C16/448 ,  C23C16/455 ,  G01L9/00 ,  G05D11/13

CPC分类号： C23C16/52 ,  B01D1/14 ,  B01D1/0082 ,  C23C14/12 ,  C23C14/246 ,  C23C14/543 ,  C23C16/4483 ,  C23C16/45561 ,  G01L9/0005 ,  G05D11/139

摘要： In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.

公开(公告)号：US11694877B2

公开(公告)日：2023-07-04

申请号：US16913620

申请日：2020-06-26

申请人： SUMITOMO HEAVY INDUSTRIES, LTD.

发明人： Hisashi Kitami ,  Toshiyuki Sakemi ,  Tetsuya Yamamoto

IPC分类号： H01J37/32 ,  C23C14/48 ,  C23C14/58 ,  C23C14/54

CPC分类号： H01J37/32449 ,  C23C14/48 ,  C23C14/54 ,  C23C14/541 ,  C23C14/5826 ,  H01J2237/327

摘要： Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

公开(公告)号：US20230203642A1

公开(公告)日：2023-06-29

申请号：US18008459

申请日：2021-06-08

申请人： KEIO UNIVERSITY ,  IBARAKI UNIVERSITY ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  AYABO CORPORATION

发明人： Atsushi NAKAJIMA ,  Hironori TSUNOYAMA ,  Mika UNO ,  Hiroyuki GUNJI ,  Toshihiro ANDO ,  Keizo TSUKAMOTO ,  Masahide TONA ,  Naoyuki HIRATA

IPC分类号： C23C14/35 ,  H01M4/88 ,  C23C14/34 ,  C23C14/22 ,  C23C14/54

CPC分类号： C23C14/35 ,  H01M4/8871 ,  C23C14/3485 ,  C23C14/223 ,  C23C14/541

摘要： Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.

公开(公告)号：US20230175892A1

公开(公告)日：2023-06-08

申请号：US18013866

申请日：2020-06-30

申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

发明人： Wolfgang Braun

IPC分类号： G01J5/12 ,  C23C14/28 ,  C23C14/54 ,  C23C14/24 ,  G01J1/42 ,  G01J5/04

CPC分类号： G01J5/12 ,  C23C14/28 ,  C23C14/543 ,  C23C14/243 ,  G01J1/4257 ,  G01J5/042

摘要： The present invention relates to a method for controlling an evaporation rate of source material (20) in a system (10) for thermal evaporation with electromagnetic radiation (120), wherein the system (10) comprises an electromagnetic radiation source (110) for providing an electromagnetic radiation (120), a vacuum chamber (12) containing a reaction atmosphere (16) and a main detector (40, 100) for measuring electromagnetic radiation (120), wherein a source material (20) and a target material (18) to be coated are arranged in the vacuum chamber (12) and the electromagnetic radiation source (110) is arranged such that its electromagnetic radiation (120) impinges at an angle, preferably at an angle of 45°, on a source surface (22) of the source material (20) for a thermal evaporation and/or sublimation of the source material (20) below the plasma threshold, and wherein the main detector (40, 100) for measuring electromagnetic radiation (120) is arranged such that electromagnetic radiation (120) reflected on the source surface (22) reaches the main detector (40, 100), further wherein the source material (20) is provided by a source element (24), wherein the source surface (22) is located accessible for the electromagnetic radiation (120) at the source element (24), whereby the source element (24) is arranged in a holding structure (28) and movable by the holding structure (28) perpendicular to the source surface (22). Further, the present invention relates to a detector (40) for measuring electromagnetic radiation (120), the detector (40) preferably suitable for a method according to the present invention, and additionally to a system (10) for thermal evaporation with electromagnetic radiation (120) suitable for the method according to the present invention.

公开(公告)号：US20230175114A1

公开(公告)日：2023-06-08

申请号：US18076970

申请日：2022-12-07

申请人： TOKYO ELECTRON LIMITED

发明人： Shota ISHIBASHI ,  Toru KITADA

IPC分类号： C23C14/35 ,  C23C14/54

CPC分类号： C23C14/352 ,  C23C14/54

摘要： A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

公开(公告)号：US11649541B2

公开(公告)日：2023-05-16

申请号：US17288269

申请日：2019-10-28

申请人： Oerlikon Surface Solutions AG, Pfäffikon

发明人： Siva Phani Kumar Yalamanchili

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/54 ,  C23C14/58

CPC分类号： C23C14/0641 ,  C23C14/34 ,  C23C14/543 ,  C23C14/5813

摘要： The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

公开(公告)号：US20230129777A1

公开(公告)日：2023-04-27

申请号：US17507675

申请日：2021-10-21

申请人： The United States of America, as represented by the Secretary of the Navy

发明人： Alexandru Hening ,  Maria Dinescu ,  Wayne C. McGinnis ,  Ryan P. Lu

IPC分类号： C23C14/00 ,  C23C14/52 ,  C23C14/54

摘要： An apparatus for laser deposition with a reactive gas includes a source, a target, and a substrate. The source emits a plasma jet of the reactive gas. The target generates a plasma plume of a deposition material when a laser beam ablates the target. The substrate collects a film resulting from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet. Correspondingly, a method for laser deposition with a reactive gas includes steps of emitting a plasma jet of the reactive gas, ablating a target with a laser beam, and collecting a film on a substrate. The plasma jet emits from an orifice of a source. Ablating the target generates a plasma plume of a deposition material. The film results from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet.

公开(公告)号：US20230124304A1

公开(公告)日：2023-04-20

申请号：US17903892

申请日：2022-09-06

申请人： Applied Materials, Inc.

发明人： Kelvin Chan ,  RUIYING HAO ,  WAYNE FRENCH ,  FARZAD HOUSHMAND

IPC分类号： C23C16/455 ,  C23C14/54 ,  C23C16/52

摘要： Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.

公开(公告)号：US20230100602A1

公开(公告)日：2023-03-30

申请号：US17486210

申请日：2021-09-27

申请人： Applied Materials, Inc.

发明人： Tuck Foong KOH ,  John Leonard SUDIJONO

IPC分类号： H01J37/32 ,  C23C14/02 ,  C23C14/12 ,  C23C14/54

摘要： A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

公开(公告)号：US11615961B2

公开(公告)日：2023-03-28

申请号：US17529504

申请日：2021-11-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Jung Huang ,  Li-Hsin Chu ,  Po-Feng Tsai ,  Henry Peng ,  Kuang Huan Hsu ,  Tsung Wei Chen ,  Yung-Lin Hsu

IPC分类号： H01L21/265 ,  C23C14/54 ,  C23C14/48 ,  H01L21/66

摘要： The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.