公开(公告)号：US07742686B2

公开(公告)日：2010-06-22

申请号：US10950556

申请日：2004-09-28

Applicant: Masahiko Miyashita ,  Takao Yamada ,  Nobuo Ohyama ,  Kou Atsumi

Inventor： Masahiko Miyashita ,  Takao Yamada ,  Nobuo Ohyama ,  Kou Atsumi

IPC: H04N5/00

CPC classification number: G11B27/105 ,  G11B27/11 ,  G11B27/34 ,  G11B2220/2529 ,  G11B2220/2545 ,  G11B2220/2562

Abstract: A signal processor includes a point setting part that sets a position of a main image signal, as a registration point. A playback control part causes output of an image frame from the registration point used as a starting point in response to a given playback instruction. A capture processing part generates a registration image based on the main image signal and stores the registration image, the at least one image frame being placed in a neighborhood of the registration point. A point recording part writes the registration point into a memory and writes the registration image corresponding to the recorded point into the memory. A point calling part reads out the recorded image and the recorded point in response to a given calling instruction. The point setting part sets the recorded point and the recorded image as the registration point and the registration image, respectively.

Abstract translation: 信号处理器包括设置主图像信号的位置的点设置部分作为注册点。 回放控制部分响应于给定的回放指令，将来自注册点的图像帧的输出用作起始点。 捕获处理部分基于主图像信号生成登记图像，并且将登记图像存储，所述至少一个图像帧被放置在登记点的附近。 点记录部分将注册点写入存储器，并将对应于记录点的注册图像写入存储器。 点呼叫部分响应于给定的呼叫指令读出记录的图像和记录的点。 点设置部分将记录点和记录图像分别设置为注册点和注册图像。

公开(公告)号：US07183586B2

公开(公告)日：2007-02-27

申请号：US10989657

申请日：2004-11-17

Applicant: Takashi Ichihara ,  Daisuke Sanga ,  Takeshi Kususe ,  Takao Yamada

Inventor： Takashi Ichihara ,  Daisuke Sanga ,  Takeshi Kususe ,  Takao Yamada

IPC: H01L29/22

CPC classification number: H01L33/32 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2933/0091

Abstract: A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface. Furthermore, a translucent conductive layer 17 is formed between reflective layer 16 and the nitride semiconductor layer of the second conductivity type, and an uneven interface 22 is formed as the interface between translucent conductive layer 17 and reflective layer 16.

Abstract translation: 氮化物半导体发光元件设置有：具有彼此相对的一对主表面的基板11; 在衬底11的一个主表面上分层的第一导电类型的氮化物半导体层; 层叠在第一导电类型的氮化物半导体层上的第二导电类型的氮化物半导体层; 形成在第一导电类型的氮化物半导体层和第二导电类型的氮化物半导体层之间的有源层14; 以及形成在第二导电类型的氮化物半导体层上的反射层16，用于将来自有源层14的光朝向第二导电类型的氮化物半导体层反射。 该氮化物半导体发光元件可以安装在电路板上，上述基板11的另一个主表面用作主发光表面。 此外，在反射层16和第二导电类型的氮化物半导体层之间形成半透明导电层17，并且形成不平坦界面22作为透光性导电层17和反射层16之间的界面。

公开(公告)号：US06998690B2

公开(公告)日：2006-02-14

申请号：US10609410

申请日：2003-07-01

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L27/14

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US06654317B2

公开(公告)日：2003-11-25

申请号：US10151958

申请日：2002-05-22

Applicant: Atsuki Tada ,  Takao Yamada ,  Takashi Suzuki ,  Takeaki Funada ,  Yuuji Murai

Inventor： Atsuki Tada ,  Takao Yamada ,  Takashi Suzuki ,  Takeaki Funada ,  Yuuji Murai

IPC: G11B2108

CPC classification number: G11B20/10527 ,  G11B27/005 ,  G11B27/105 ,  G11B27/3027 ,  G11B2020/00057

Abstract: A method for reproducing information, comprising the steps of: reading compressed audio data from an information recording medium in which the compressed audio data is recorded in a frame unit; and subjecting the compressed audio data thus read to an expansion processing to reproduce same. When an instruction is given to make a special reproduction in which a frame region to be reproduced and an other frame region not to be reproduced are mixed, control is made so that the compressed audio data in respective frames are successively reproduced in the frame region to be reproduced, and a header information for the respective frames is read out in the other frame region not to be reproduced, and determination on a leading position of a subsequent frame is made on a basis of the header information, thereby conducting a successive migration for the respective frames.

公开(公告)号：US06204512B1

公开(公告)日：2001-03-20

申请号：US09448479

申请日：1999-11-24

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L2972

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US6165936A

公开(公告)日：2000-12-26

申请号：US120879

申请日：1998-07-23

Applicant: Takao Yamada ,  Kazuhito Tsumuki

Inventor： Takao Yamada ,  Kazuhito Tsumuki

IPC: C04B38/00 ,  B01J21/04 ,  B01J32/00 ,  B01J37/00 ,  B01J37/08 ,  C04B35/10 ,  C04B38/06 ,  F27D1/00 ,  F27D5/00 ,  B28B1/00 ,  B29C65/00

CPC classification number: F27D1/0006 ,  B01J21/04 ,  B01J37/0009 ,  C04B38/06 ,  F27D5/00 ,  C04B35/10 ,  C04B35/64 ,  C04B38/0054

Abstract: An alumina-based porous support with uniform physical properties is obtained in a rapid sintering process. An alumina raw material including a raw alumina powder and an inorganic binder is molded into an article, and the article is then sintered for 5 to 8 hours at 1520 to 1560.degree. C. using a roller hearth kiln.

Abstract translation: 在快速烧结工艺中获得具有均匀物理性质的氧化铝基多孔载体。 将包含生氧化铝粉末和无机粘合剂的氧化铝原料模制成制品，然后使用辊式炉窑将制品在1520至1560℃下烧结5至8小时。

公开(公告)号：US6083539A

公开(公告)日：2000-07-04

申请号：US40873

申请日：1998-03-18

Applicant: Takao Yamada ,  Yoshio Iljima

Inventor： Takao Yamada ,  Yoshio Iljima

IPC: A23G3/34 ,  A23G9/32 ,  A23G9/34 ,  A23L7/104 ,  A23L21/12 ,  A23L1/09 ,  A23L1/10 ,  A23L1/105

CPC classification number: A23G9/34 ,  A23G3/346 ,  A23L21/12 ,  A23L7/107 ,  A23G2200/06

Abstract: The present invention relates to a buckwheat starch syrup prepared by liquefying, saccharisfying, and proteolyzing starch from buckwheat flour, a method for preparing the buckwheat starch syrup, and various foods containing the same. The buckwheat starch syrup of the present invention contains various amino acids and minerals, as well as rutin which is effective in preventing arteriosclerosis, and hence it is healthy and excellent in nutritive balance. Thus, the buckwheat starch syrup of the present invention can be suitably used in various foods.

Abstract translation: 本发明涉及通过从荞麦粉液化，糖化和蛋白分解淀粉制备的荞麦淀粉糖浆，制备荞麦淀粉糖浆的方法，以及含有该荞麦淀粉糖浆的各种食品。 本发明的荞麦淀粉糖浆含有各种氨基酸和矿物质，以及有效预防动脉硬化的芦丁，因此其健康，营养平衡优异。 因此，本发明的荞麦淀粉糖浆可适用于各种食品。

公开(公告)号：US5877558A

公开(公告)日：1999-03-02

申请号：US995167

申请日：1997-12-19

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L21/00 ,  H01L21/285 ,  H01L29/20 ,  H01L29/72 ,  H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/78

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/42 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L29/2003 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L33/38 ,  H01L33/44 ,  H01S5/0425 ,  H01S5/32341 ,  Y02E10/50

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

公开(公告)号：US5572333A

公开(公告)日：1996-11-05

申请号：US614940

申请日：1996-03-11

Applicant: Yoshiaki Moriyama ,  Kouichi Ono ,  Sumio Hosaka ,  Takao Yamada

Inventor： Yoshiaki Moriyama ,  Kouichi Ono ,  Sumio Hosaka ,  Takao Yamada

IPC: G11B20/10 ,  G06T9/00 ,  H04N5/92 ,  H04N7/50 ,  H04N9/804 ,  H04N9/806 ,  H04N21/236 ,  H04N21/2368 ,  H04N21/434 ,  H04N5/76 ,  G11B5/00 ,  G11B5/09 ,  H04N5/91

CPC classification number: H04N9/8047 ,  H04N19/124 ,  H04N19/149 ,  H04N19/176 ,  H04N19/46 ,  H04N19/61 ,  H04N21/4334 ,  H04N21/434 ,  H04N21/4341 ,  H04N19/146 ,  H04N19/152 ,  H04N9/8063

Abstract: A method of recording compressed and coded data is designed to improve the speed and ease of random accessing, and to reduce the buffer capacity and facilitate control and editing in the reproducing system. The method comprises the steps of compressing and coding video signals for every predetermined number of frames with the amount of codes per predetermined number of frames being constant; storing the predetermined number of frames of compressed and coded video signals into at least one video packet; storing the video packet in a pack having a time slot corresponding to the predetermined number of frames (preferably at the end of the pack); and recording the video signals on the recording medium in a pack stream containing such packs, with the relation between the size of the pack and the size of the logical block of the recording medium being set to 1:n (n: an integer) and the relation between the size of the pack and the size of the physical block of the recording medium being set to 2:m (m: an integer).

Abstract translation: 记录压缩和编码数据的方法被设计为提高随机存取的速度和容易度，并且减少缓冲器容量并促进再现系统中的控制和编辑。 该方法包括以下步骤：每预定数量的帧压缩和编码视频信号，每个预定帧数的码数是恒定的; 将预定数量的压缩和编码视频信号的帧存储到至少一个视频分组中; 将所述视频分组存储在具有对应于所述预定帧数（优选在所述包末端）的时隙的包中; 并且将包含该包的大小与记录介质的逻辑块的大小之间的关系设置为1：n（n：整数），并将该视频信号记录在包含这种包的包流中的记录介质上。 包的大小与记录介质的物理块的大小之间的关系被设置为2：m（m：整数）。

公开(公告)号：US5077243A

公开(公告)日：1991-12-31

申请号：US668676

申请日：1991-03-07

Applicant: Kikuo Nakano ,  Kenji Oshima ,  Misao Iwata ,  Takao Yamada

Inventor： Kikuo Nakano ,  Kenji Oshima ,  Misao Iwata ,  Takao Yamada

IPC: C04B35/18 ,  C04B35/80

CPC classification number: C04B35/18 ,  C04B35/803

Abstract: A fiber-reinforced ceramic composite material reinforced by particle dispersion with improved fracture toughness comprised of a mullite matrix, and fibers and same or different kind of ceramic fine particles both dispersed within the mullite matrix is produced by a method comprising: dispersing mullite particles forming a matrix in a solution dissolving an organometallic macromolecular substance to prepare an impregnating solution, continuously passing fibers through said impregnating solution to uniformly impregnate the fibers with said impregnating solution, laminating said fibers to provide a laminated body, converting the organometallic macromolecular substance within said laminated body into a nonmeltable state, and performing sintering (or press sintering) of said laminated body in an inert gas and/or nitrogen gas. By press sintering K.sub.Ic of 10 MN/m.sub.3/2 or more is achieved.

Abstract translation: 通过包含分散在莫来石基质内的纤维和相同或不同种类的陶瓷细颗粒，通过具有改善的断裂韧性增强的颗粒分散体增强的纤维增强陶瓷复合材料通过包括：分散形成 在溶解有机金属高分子物质的溶液中制备浸渍溶液，将纤维连续通过所述浸渍溶液，用所述浸渍溶液均匀浸渍纤维，层压所述纤维以提供层压体，将所述层压体内的有机金属高分子物质 进入不可熔化状态，并且在惰性气体和/或氮气中进行所述层压体的烧结（或压制烧结）。 通过压力烧结实现10MN / m3 / 2以上的KIc。