公开(公告)号：US11071191B2

公开(公告)日：2021-07-20

申请号：US16899825

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  B08B5/02 ,  B01D46/10 ,  G03F7/20 ,  H01L21/027

Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.

公开(公告)号：US11062898B2

公开(公告)日：2021-07-13

申请号：US16182771

申请日：2018-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Chian Huang ,  Po-Chung Cheng ,  Ching-Juinn Huang ,  Tzung-Chi Fu ,  Tsung-Yen Lee

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/08 ,  G03F7/20 ,  B08B5/04

Abstract: A particle removal apparatus is provided. The particle removal apparatus includes a reticle holder configured to hold a reticle. The particle removal apparatus further includes a robotic arm. The particle removal apparatus also includes a particle removal device disposed on the robotic arm, and the particle removal device includes a solution spraying module. In addition, the robotic arm and the particle removal device are configured to align with a particle on a backside of the reticle, and the solution spraying module is configured to spray a solution onto the particle to remove the particle.

公开(公告)号：US10997706B2

公开(公告)日：2021-05-04

申请号：US16115699

申请日：2018-08-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zi-Wen Chen ,  Po-Chung Cheng ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Shih-Chang Shih

IPC: G06T7/00 ,  H04N5/00 ,  G06T7/521 ,  G03F7/20 ,  G03F1/84 ,  H04N5/232

Abstract: A method of inspecting a reticle includes obtaining a first image of a surface of the reticle at a first height by scanning the reticle surface with a light source at the first height of the reticle surface relative to a reference surface height of the reticle surface and obtaining a second image of the reticle surface at a second height by scanning the reticle surface with the light source at the second height of the reticle surface relative to the reference surface height of the reticle surface. The second height is different from the first height. The first and the second images are then combined to obtain a surface profile image of the reticle.

公开(公告)号：US10993308B2

公开(公告)日：2021-04-27

申请号：US16671347

申请日：2019-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Hsieh ,  Shang-Chieh Chien ,  Chun-Chia Hsu ,  Bo-Tsun Liu ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

公开(公告)号：US10980100B2

公开(公告)日：2021-04-13

申请号：US16723911

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  H01S3/13 ,  G21K1/06 ,  H01S3/104 ,  H01S3/23 ,  H01S3/11 ,  H01S3/223 ,  H01S3/134 ,  H01S3/10

Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.

公开(公告)号：US10962881B2

公开(公告)日：2021-03-30

申请号：US16019732

申请日：2018-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Kuan Wu ,  Po-Chung Cheng ,  Li-Jui Chen ,  Chih-Tsung Shih

IPC: G03F7/20 ,  G03F7/38

Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

公开(公告)号：US20210068241A1

公开(公告)日：2021-03-04

申请号：US17098081

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia Hsu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu

IPC: H05G2/00

Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.

公开(公告)号：US10802406B2

公开(公告)日：2020-10-13

申请号：US16535003

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh Hsieh ,  Kuan-Hung Chen ,  Chun-Chia Hsu ,  Shang-Chieh Chien ,  Liu Bo-Tsun ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  G06F30/39

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US10791616B1

公开(公告)日：2020-09-29

申请号：US16365905

申请日：2019-03-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu Chen ,  Chi Yang ,  Che-Chang Hsu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F1/58 ,  G03F7/20 ,  G03F1/24

Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.

公开(公告)号：US10779387B2

公开(公告)日：2020-09-15

申请号：US16249046

申请日：2019-01-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hsun Tsai ,  Han-Lung Chang ,  Yen-Hsun Chen ,  Shao-Hua Wang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A method of operating an extreme ultraviolet (EUV) lithography system includes directing a metallic droplet along a shroud, wherein the shroud has a first opening adjacent a droplet generator and a second opening adjacent an excitation region; partially shielding the second opening of the shroud; and emitting a laser beam encountering the metallic droplet to generate an EUV light.