Abstract:
An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1.Equation 1 is described in the detailed description.
Abstract:
A light emitting device including a semiconductor nanocrystal and a ligand bound to a surface of the semiconductor nanocrystal, wherein the ligand includes an organic thiol ligand or a salt thereof and a polyvalent metal compound including a metal including Zn, In, Ga, Mg, Ca, Sc, Sn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, Nb, Mo, Cd, Ba, Au, Hg, Tl, or a combination thereof, and a display device including the light emitting device.
Abstract:
An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.
Abstract:
There is provided a method of manufacturing a substrate for mounting an electronic device. The method includes disposing a protective layer on a surface of the substrate except for an edge portion thereof . An oxide film is disposed on the entirety of the surface of the substrate except for where the protective layer is disposed The oxide film is grown. A through hole is formed in a thickness direction of the substrate by selectively etching the protective layer. The oxide film is removed. In the manufacturing method, defects in the substrate for mounting an electronic device may be reduced and manufacturing costs can be reduced.
Abstract:
An electroluminescent device including a first electrode, a second electrode, and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including semiconductor nanoparticle(s), wherein the semiconductor nanoparticle(s) does not include cadmium, wherein the semiconductor nanoparticle(s) includes a polycyclic organic ligand including functional group linked to a C6-50 condensed aromatic group, the functional group configured to link to the semiconductor nanoparticle(s), and the C6-50 condensed aromatic group including at least three cyclic moieties that includes a first aromatic ring and a second aromatic ring, and the first aromatic ring shares two carbon atoms with a first adjacent cyclic moiety and the second aromatic ring shares two carbon atoms with the first adjacent cyclic moiety, or the second aromatic ring shares two carbon atoms with a second adjacent cyclic moiety condensed with the first adjacent cyclic moiety.
Abstract:
A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
Abstract:
A quantum dot device and an electronic device. The quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the second electrode and the light emitting layer and enhancing transport of first charge carriers from the second electrode to the light emitting layer, and a buffer layer disposed between the light emitting layer and the first charge auxiliary layer and enhancing extraction of second charge carriers from the light emitting layer.
Abstract:
A quantum dot quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, and a first hole auxiliary layer between the first electrode and the light emitting layer, wherein the first hole auxiliary layer includes a first hole auxiliary material and a second hole auxiliary material having a greater bandgap energy than a bandgap energy of the first hole auxiliary material, a difference between a HOMO energy level of the second hole auxiliary material and a HOMO energy level of the first hole auxiliary material is about 0.1 eV and less than about 0.8 eV, and a difference between a LUMO energy level of the second hole auxiliary material and a LUMO energy level of the first hole auxiliary material is greater than or equal to about 0.3 eV.
Abstract:
An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.
Abstract:
A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.