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    Light emitting device and display device including the same
    41.
    发明授权
    Light emitting device and display device including the same 有权

    公开(公告)号：US11205761B2

    公开(公告)日：2021-12-21

    申请号：US16832004

    申请日：2020-03-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwanghee Kim ,  Dae Young Chung ,  Tae Hyung Kim ,  Eun Joo Jang ,  Moon Gyu Han

    IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

    Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

    Electroluminescent device, and display device comprising the same
    42.
    发明授权
    Electroluminescent device, and display device comprising the same 有权

    公开(公告)号：US11038112B2

    公开(公告)日：2021-06-15

    申请号：US16203988

    申请日：2018-11-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dae Young Chung ,  Moon Gyu Han ,  Tae Hyung Kim ,  Sang Jin Lee ,  Eun Joo Jang

    IPC: H01L51/50 ,  H01L51/00 ,  H01L51/52

    Abstract: An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1.
    Equation 1 is described in the detailed description.

    Photoelectric devices and image sensors and electronic devices
    44.
    发明授权
    Photoelectric devices and image sensors and electronic devices 有权

    公开(公告)号：US10854832B2

    公开(公告)日：2020-12-01

    申请号：US16178692

    申请日：2018-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Chul Joon Heo ,  Moon Gyu Han ,  Yong Wan Jin

    IPC: H01L51/42 ,  H01L27/30 ,  H01L51/44 ,  H01L51/00 ,  H01L27/146

    Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.

    Quantum dot device and electronic device
    45.
    发明授权
    Quantum dot device and electronic device 有权

    公开(公告)号：US10446782B1

    公开(公告)日：2019-10-15

    申请号：US16104967

    申请日：2018-08-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Moon Gyu Han ,  Dae Young Chung ,  Hongkyu Seo ,  Kwanghee Kim ,  Kun Su Park ,  Sujin Park ,  Eun Joo Jang

    IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

    Abstract: A quantum dot device includes a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots, a first charge auxiliary layer disposed between the first electrode and the quantum dot layer and contacting the quantum dot layer, and a second charge auxiliary layer disposed between the second electrode and the quantum dot layer and contacting the quantum dot layer, wherein the plurality of quantum dots includes a quantum dot including an organic ligand on a surface thereof, the organic ligand including a hydrophilic functional group at a terminal end.

    Image sensors and electronic devices including the same
    47.
    发明授权
    Image sensors and electronic devices including the same 有权

    公开(公告)号：US10361251B2

    公开(公告)日：2019-07-23

    申请号：US15618750

    申请日：2017-06-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Moon Gyu Han

    IPC: H01L27/30 ,  H01L27/28 ,  H01L27/146

    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.

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