公开(公告)号：US20160358856A1

公开(公告)日：2016-12-08

申请号：US15058676

申请日：2016-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Su Kim

IPC: H01L23/528 ,  H01L29/08 ,  H01L29/78 ,  H01L27/092 ,  H01L23/522

CPC classification number: H01L23/5286 ,  H01L27/0924 ,  H01L27/11807 ,  H01L29/0847 ,  H01L29/7848 ,  H01L2027/11881 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: A semiconductor device includes a first power rail, a second power rail, at least one standard cell and at least one power bridge. The first power rail extends in a first direction over a substrate. The second power rail extends in the first direction over the substrate, and the second power rail is spaced apart from the first power rail in a second direction that intersects the first direction. The at least one standard cell receives a first voltage from the first and the second power rails. The at least one power bridge connects the first power rail and the second power rail in the second direction. The first power rail and the second power rail are formed in a first metal layer and the least one power bridge is formed in a bottom metal layer that is under the first metal layer.

Abstract translation: 半导体器件包括第一电源轨，第二电源轨，至少一个标准单元和至少一个电源桥。 第一电源轨在第一方向上延伸到衬底上。 第二电力轨在第一方向上延伸穿过衬底，并且第二电力轨在与第一方向相交的第二方向上与第一动力轨分开。 所述至少一个标准单元从第一和第二电源轨接收第一电压。 至少一个电源桥沿第二方向连接第一电力轨和第二电力轨。 第一动力轨道和第二动力轨道形成在第一金属层中，并且至少一个动力桥形成在位于第一金属层下方的底部金属层中。