Abstract:
An organic light emitting display device includes a display panel including a plurality of pixels and a panel driver configured to generate driving signals to drive the plurality of pixels. Each of the plurality of pixels includes a first transistor, a second transistor, a storage capacitor, a third transistor, a maintain capacitor, a fourth transistor, a fifth transistor, and an organic light emitting diode. The maintain capacitor is configured to maintain a gate voltage of the first transistor during an emission period of the pixels.
Abstract:
A display apparatus includes a plurality of pixels, each of the pixels including an organic light emitting diode, a first transistor providing a driving current to operate the organic light emitting diode, a second transistor including a gate electrode that receives a first scan signal, a first electrode that receives a data signal, and a second electrode electrically connected to the first electrode of the first transistor, a storage capacitor including a first electrode receiving a first power voltage and a second electrode electrically connected to the gate electrode of the first transistor, and a color accuracy enhancement transistor that applies a first back bias voltage to the first transistor in response to a color accuracy enhancement signal.
Abstract:
A sputtering target includes: a first crystal comprising In2O3 in a bixbyite structure and SnO2 of a tetragonal structure; and a second crystal comprising In4Sn3O12 in an orthorhombic structure, wherein the second crystal accounts for 8 to 16% of a total size of the first and second crystals.
Abstract translation:溅射靶包括:第一晶体,其包含菱形结构的In 2 O 3和四方结构的SnO 2; 以及包含正交结构中的In 4 Sn 3 O 12的第二晶体,其中第二晶体占第一和第二晶体总尺寸的8至16%。
Abstract:
A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.