公开(公告)号：US20190296153A1

公开(公告)日：2019-09-26

申请号：US16354396

申请日：2019-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Do Hyung KIM ,  Gun Hee KIM ,  Hyeon Sik KIM ,  Sang Ho PARK ,  Joo Hee JEON

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/08 ,  H01L27/32

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

公开(公告)号：US20190259822A1

公开(公告)日：2019-08-22

申请号：US16277221

申请日：2019-02-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joohee JEON ,  Gun Hee KIM ,  Do Hyung KIM ,  Hyeonsik KIM ,  Sangho PARK

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/00

Abstract: An organic light emitting diode display device includes a substrate, a driving transistor, and a sub-pixel structure. The substrate has a first trench. The driving transistor is inside the first trench of the substrate. The sub-pixel structure is on the driving transistor.

公开(公告)号：US20220158030A1

公开(公告)日：2022-05-19

申请号：US17479980

申请日：2021-09-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Mi Hyang SHEEN ,  Ki Young YEON ,  Do Hyung KIM ,  Kyung Lae RHO ,  Na Ri AHN

IPC: H01L33/24 ,  H01L33/00 ,  H01L25/075 ,  H01L33/12

Abstract: A method of manufacturing a light-emitting element, and a light-emitting element array substrate and a display device including the same are provided. A method of manufacturing a light-emitting element includes: forming a base substrate including a plurality of protrusions and a rod area which is a remaining area except for the plurality of protrusions; forming a buffer layer on the base substrate; forming a semiconductor structure including a first semiconductor material layer, a light-emitting material layer, and a second semiconductor material layer on the buffer layer; forming a plurality of mask patterns overlapping the rod area on the semiconductor structure; forming element rods by removing the semiconductor structure overlapping the plurality of protrusions using the plurality of mask patterns; forming an insulating film around an outer surface of each of the element rods. and separating the element rods from the buffer layer.

公开(公告)号：US20190279564A1

公开(公告)日：2019-09-12

申请号：US16295361

申请日：2019-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Gun Hee KIM ,  Do Hyung KIM ,  Hyeonsik KIM ,  Sangho PARK ,  Joo-Sun YOON ,  Joohee JEON

IPC: G09G3/3225 ,  H01L27/32

Abstract: A display apparatus includes a plurality of pixels, each of the pixels including an organic light emitting diode, a first transistor providing a driving current to operate the organic light emitting diode, a second transistor including a gate electrode that receives a first scan signal, a first electrode that receives a data signal, and a second electrode electrically connected to the first electrode of the first transistor, a storage capacitor including a first electrode receiving a first power voltage and a second electrode electrically connected to the gate electrode of the first transistor, and a color accuracy enhancement transistor that applies a first back bias voltage to the first transistor in response to a color accuracy enhancement signal.

公开(公告)号：US20220093804A1

公开(公告)日：2022-03-24

申请号：US17544353

申请日：2021-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do Hyung KIM ,  Gun Hee KIM ,  Hyeon Sik KIM ,  Sang Ho PARK ,  Joo Hee JEON

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/08

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

公开(公告)号：US20230215983A1

公开(公告)日：2023-07-06

申请号：US18093959

申请日：2023-01-06

Applicant: Samsung Display Co., LTD.

Inventor： Mi Hyang SHEEN ,  Yun Hyuk KO ,  Dong Uk KIM ,  Na Ri AHN ,  Chang Hee LEE ,  Do Hyung KIM ,  Ran KIM ,  In Pyo KIM ,  Ki Young YEON ,  Je Won YOO ,  Joo Hee LEE ,  Sang Ho JEON ,  Jung Woon JUNG ,  Chan Woo JOO ,  Jin Young CHOI ,  Na Mi HONG ,  Jong Il KIM ,  Jin Ho BYUN ,  Sang Ho OH ,  Jae Kwang LEE ,  Yong Seok CHOI ,  Jong Hoon HA

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016

Abstract: A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.