公开(公告)号：US11715748B2

公开(公告)日：2023-08-01

申请号：US17191437

申请日：2021-03-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Yoshinori Takami ,  Ryota Sakaida

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14607 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

公开(公告)号：US11653116B2

公开(公告)日：2023-05-16

申请号：US17539938

申请日：2021-12-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Junji Hirase

IPC: H04N5/363 ,  H04N5/378 ,  H04N5/361 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/363 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14665 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.

公开(公告)号：US11545525B2

公开(公告)日：2023-01-03

申请号：US17013289

申请日：2020-09-04

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Satoshi Shibata ,  Ryota Sakaida

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/42

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

公开(公告)号：US20210091128A1

公开(公告)日：2021-03-25

申请号：US17116958

申请日：2020-12-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Junji Hirase

IPC: H01L27/146 ,  H04N5/359 ,  H01L27/30 ,  H04N5/369

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

公开(公告)号：US10931900B2

公开(公告)日：2021-02-23

申请号：US16410893

申请日：2019-05-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Junji Hirase ,  Yoshihiro Sato ,  Yoshinori Takami ,  Masayuki Takase ,  Masashi Murakami

IPC: H04N5/361 ,  H04N5/359 ,  H04N5/363 ,  H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

公开(公告)号：US10825846B2

公开(公告)日：2020-11-03

申请号：US16034328

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kyosuke Kobinata ,  Sanshiro Shishido ,  Yoshihiro Sato

IPC: H01L27/146 ,  H01L31/0224 ,  H04N5/378 ,  H04N5/353 ,  H04N5/374 ,  H04N5/357

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode. An area of the second electrode is greater than an area of the fourth electrode, and both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in plan view.

公开(公告)号：US10658406B2

公开(公告)日：2020-05-19

申请号：US15955748

申请日：2018-04-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/3745

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged thereon; and a signal line through which a signal from a pixel is transferred. the pixel includes a photoelectric converter generating a charge, a region accumulating the charge, an amplification transistor having a gate electrically connected to the region, a first capacitor having a first terminal electrically connected to the region and a second terminal, a second capacitor having a third terminal electrically connected to the second terminal and a fourth terminal supplied with a voltage, a feedback transistor a source or a drain of which is electrically connected to the second terminal, and a feedback circuit forming a path through which an output from the amplification transistor is negatively fed back to the region. A part, which is from the feedback transistor to the first capacitor, of the path is closer to the semiconductor substrate than the signal line is.

公开(公告)号：US10559621B2

公开(公告)日：2020-02-11

申请号：US16045557

申请日：2018-07-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sato ,  Junji Hirase

IPC: H01L27/146 ,  H01L27/30

Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

公开(公告)号：US10062726B2

公开(公告)日：2018-08-28

申请号：US15851238

申请日：2017-12-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Junji Hirase

IPC: H01L27/146

CPC classification number: H01L27/14665 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/307

Abstract: An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the first area. The semiconductor substrate including a first region of a first conductivity type exposed to the surface in the first area, and a second region of a second conductivity type directly adjacent to the first region and exposed to the surface in the second area; a photoelectric converter; an amplifier; a contact plug connected to the second region; a first transistor including a first electrode; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When viewed in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

公开(公告)号：US09935149B2

公开(公告)日：2018-04-03

申请号：US15441568

申请日：2017-02-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Mitsuyoshi Mori ,  Ryohei Miyagawa ,  Yoshiyuki Ohmori ,  Yoshihiro Sato ,  Yutaka Hirose ,  Yusuke Sakata ,  Toru Okino

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.