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    Optical Near-Field Metrology
    41.
    发明申请
    Optical Near-Field Metrology 审中-公开

    公开(公告)号：US20180087900A1

    公开(公告)日：2018-03-29

    申请号：US15599881

    申请日：2017-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Yuri Paskover ,  Amnon Manassen ,  Vladimir Levinski

    IPC: G01B11/27 ,  G01N21/64 ,  G01B11/30 ,  G01N21/95

    CPC classification number: G01B11/272 ,  G01B11/303 ,  G01B2210/56 ,  G01N21/6489 ,  G01N21/9501 ,  G03F7/70633

    Abstract: Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.

    Topographic Phase Control For Overlay Measurement
    42.
    发明申请
    Topographic Phase Control For Overlay Measurement 审中-公开

    公开(公告)号：US20170146915A1

    公开(公告)日：2017-05-25

    申请号：US15114175

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yuri Paskover ,  Amnon Manassen ,  Yoni Shalibo

    IPC: G03F7/20 ,  H04N5/232 ,  G06T7/80 ,  G02B7/38 ,  G02B27/32

    Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS
    45.
    发明申请
    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS 有权
    设备类似的重叠目标

    公开(公告)号：US20130342831A1

    公开(公告)日：2013-12-26

    申请号：US13904318

    申请日：2013-05-29

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Daniel Kandel ,  Eran Amit

    IPC: G01B11/27 ,  H01L23/544

    CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

    Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有可由检测工具分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS
    47.
    发明申请
    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS 有权

    公开(公告)号：US20210149296A1

    公开(公告)日：2021-05-20

    申请号：US17161645

    申请日：2021-01-28

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Yoel Feler ,  Vladimir Levinski ,  Roel Gronheid ,  Sharon Aharon ,  Evgeni Gurevich ,  Anna Golotsvan ,  Mark Ghinovker

    IPC: G03F1/84 ,  G03F7/20 ,  G01N21/00 ,  G03F1/44 ,  G06F30/39 ,  G03F1/26

    Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

    Diffraction based overlay scatterometry
    48.
    发明授权
    Diffraction based overlay scatterometry 有权

    公开(公告)号：US10824079B2

    公开(公告)日：2020-11-03

    申请号：US16122495

    申请日：2018-09-05

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Yuval Lubashevsky ,  Yuri Paskover ,  Vladimir Levinski ,  Amnon Manassen

    IPC: G03F7/20 ,  G01N21/95 ,  G02B27/42 ,  G01N21/47

    Abstract: A method of monitoring overlay is used in a manufacturing process in which successive layers are deposited one over another to form a stack. Each layer may include a periodic structure such as a diffraction grating to be aligned with a periodic structure in another layer. The stacked periodic structures may be illuminated to form + and − first order diffraction patterns from the periodic structures. An image of the stacked periodic structures may be captured including + and − diffraction patterns. The + and − diffraction patterns may be compared to calculate the overlay between successive layers.

    Multi-Layer Overlay Metrology Target and Complimentary Overlay Metrology Measurement Systems
    50.
    发明申请
    Multi-Layer Overlay Metrology Target and Complimentary Overlay Metrology Measurement Systems 审中-公开

    公开(公告)号：US20180275530A1

    公开(公告)日：2018-09-27

    申请号：US15925325

    申请日：2018-03-19

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    IPC: G03F7/20

    Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

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